• Korean Journal of Crystallography
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• v.8 no.2
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• pp.144-148
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• 1997

the molecular and crystal 3-dimensional structure of bentazone, C10H12N2O3S, has been determined from single crystal x-ray diffraction study. Crystal system is monoclinic: a=8.7817(9)Å, b=9.6059(9) Å, c=13.574(9) Å, β=97.269(1)', V=1136.1(6)Å, space group : P21/c, z=4. The molecular structure model was solved by direct method and refined by full matrix least squares. The final reliable factor, R, is 0.045 for 1396 independent reflections(Fo2>4σFo2). A molecule has a staggered conformation with thiocarbazin ring and isopropyl functional group and the molecules by hydrogen bonds are cross stacked along the c-axis.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.225-232
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• 2012

It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.13 no.3
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• pp.65-70
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• 2003

In this paper, we propose a scalar multiplication method and its hardware architecture which is resistant to SPA while its computation speed is faster than Colon's. There were SPA-resistant scalar multiplication method which has performance problem. Due to this reason, the research about an efficient SPA-resistant scalar multiplication is one of important topics. The proposed architecture resists to SPA and is faster than Colon's method under the assumption that Colon's and the proposed method use same fmite field arithmetic units(multiplier and inverter). With n-bit scalar multiple, the computation cycle of the proposed is 2n·(Inversion cycle)+3(Aultiplication cycle).

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.384-389
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• 2008

An accelerated fatigue test is essentially required to maintain the reliability of the actual structure of KTX under operation conditions. However, actual fatigue life cannot be obtained if specimens are not adequate to the conventional fatigue test. Moreover component maker did not provide data of loading stress (S) - cycles at the failure (N). In this study, we suggest a prediction method of the S-N curve for establishing an accelerating test under various load levels. Load history was acquired from the field tests. A Rainflow method was used on the cycle counting of the field load data, and then, an S-N curve was obtained through the iteration process under the condition that the damage index satisfies to 1 in the Miner's rule.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.108-108
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• 1998

최근의 GaN에 관한 연구는 주로 MOCVD법과 MBE법이 이용되고 있으며 대부분 800¬1$\alpha$)()t 정도의 고옹에서 이루어지고 었다. 그러나 이러한 고온 성장은 GaN 성장 과청에서 질 소 vacancy를 생성시켜 광특성을 저하시키고 청색 발광충인 InGaN 화합물에 In의 유입울 어 렵게 하며 저온에서보다 탄소 오염이 증가하는 동의 문제캠을 가지고 있다. 이러한 고온 생장 의 문제점을 해결하기 위한 방법중의 한 가지로 제시되고 있는 것이 저온 성장법이다. 본 연구 에 사용된 RPE-UHVCVD법은 Nz률 rf plasma로 $\sigma$acking하여 공급함으로써 NI-h롤 질소원으 로 사용하는 고온 성장의 청우와는 다르게 온도에 크게 의존하지 고 질소원올 공급할 수 있 어 저옹 성장이 가능하였다. 기판으로는 a - Alz03($\alpha$)()1)를 사용하였고 3족원은 TEGa(triethylgallium)이며,5족원으로는 6 6-nine Nz gas를 rf plasma로 cracking하여 활성 질소원올 공급하였다 .. Nz plasma로 질화처리 를 한 sapphire 표면 위에 G따애 핵생성충을 성장 옹도(350 t, 375 t, 400 t)와 성장시간(30 분,50 분) 그리고 VIllI비(1$\alpha$)(), 2뼈)둥을 변화시키면서 성장시킨 후 GaN 에피택시충을 450 $^{\circ}C$에서 120 분 동안 성장시켰다 .. XPS(x-ray photoelectron spectroscopy), XRD(x-ray d diffraction), AFM(atomic force microscope)둥올 이용하여 표면의 조성 및 morphology 변화와 결정성을 관찰하였다. X XPS 분석 결과 질화처리를 한 sapphire 표면에는 AlN가 형성되었다는 것을 확인 할 수 있 었으며 질화처리를 한 후 G따J 핵생성충올 성장시킨 경우에 morphology 변화를 AFM으로 살 펴본 결과 표면에 facet shape의 island가 형성되었고 이러한 결파는 질화처리 과청이 facet s shape의 island 형성을 촉진시킨다는 것을 알 수 있었다. 핵생성충의 성장온도가 중가함에 따 라 island의 모양은 round shape에서 facet shape으로 변화하였다. 이러한 표면의 morphology 변화와 GaN 에피택시충의 결정성과의 관계를 살펴보면 GaN 에피택시충 표면의 rms(root m mean square) roughness가 중가하는 경 우 XRD (j -rocking curve의 FWHM(full width half m maximum) 값이 감소하는 것으로 나타났다. 이러한 현상은 결정성의 향상이 columnar 성장과 관계가 었다는 것올 알 수 있었다 .. columnar 성장은 결함의 밀도가 낮은 column의 형생과 G GaN 에피택시충의 웅력 제거로 인해 G값{의 결정성을 향상시킬 수 있는 것으로 생각된다. 톡 히 고온 성장의 경우와는 달리 rms roughness의 중가가 100-150 A청도로 명탄한 표면올 유 지하면서 결정성을 향상시킬 수 있었다. 본 실험에서는 핵생성충올 375 t에서 30 분 생장시킨 경우에 hexagonal 모양의 island로 columnar 성장을 하였고 GaN 에피태시충의 결정성도 가장 향상되었다 이상의 결과로부터 RPE-UHVCVD법용 이용한 GaN 저온 성장에서도 GaN의 결청성올 향 상시킬 수 있음융 확인할 수 있었다.

• Journal of the Korean Applied Science and Technology
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• v.34 no.2
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• pp.376-381
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• 2017

We were investigated by cyclic voltammetry to the stability through the electrochemical characteristics of Langmuir-Blodgett films mixed with myristic acid and stearic acid. Fatty acid mixture monolayer LB films was deposited by the LB method on the indium tin oxide(ITO) glass. The electrochemical properties was measured by cyclic voltammetry with a three-electrode system in 0.01 N $NaClO_4$ solution. The measuring range is continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s was set. As a result, LB monolayer films of fatty acid mixture was appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient (D) of fatty acid mixture was calculated $7.9{\times}10^{-2}cm^2s^{-1}$ at 0.01 N $NaClO_4$ solution.

• The Magazine of the IEIE
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• v.30 no.5
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• pp.53-53
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• 2003

지금까지 GaN 계열 물질의 양자점 소자 관련 연구 동향을 양자점 구현 방식을 중점으로 하여 살펴보았다. GaN 계열 물질의 양자점을 구현하는 방법은 S-K 성장모드를 이용한 자발형성 양자점 구현법, anti-surfactaant를 이용하는 방법, selective epitaxy를 이용한 양자점 구현법 등이 시도되고 있다. 현재 GaN 계열 물질의 양자점 소자 연구는 아직 충분한 연구가 이루어지짖 않은 관계로 optical pumping을 통한 LD lasing 구현에 머무르고 있는 실정이다. 후 소자로의 응용을 위해서는 여러 가지 문제점이 해결되어야 한다. 우선 우수한 결정성을 지니는 양자점의 성장이 이루어져야 한다. 이외에도 각 구현 방법 별로 GaN 및 AlGaN 양자점 성장용 기판으로 많이 사용되는 높은 조성의 AlGaN 및 AlN의 doping 기술 개발, patterning 기술의 개선을 통한 미세 공정 개발 등의 여러 가지 과제들이 남아 있다. 그러나, 양자점이 지진 우수한 특성과 이를 이용한 높은 응용 가능성을 고려할 때 GaN 계열 양자점 소자의 전망은 밝다고 할 수 있다.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.466-475
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• 1993

Adhesion of W to TiN which is used as a glue layer in the blanket tungsten process has been investigated using the pulling and scratch methods and analysed using surface roughness measurements by SEM and the reflectivity measurement, the stress measurement and the SIMS depth profiling Significant differences between the adhesion of the CVD tungsten film to the s-TiN and that to the a-TiN were found. It appeared that the fomer were better than the latter, which is due to the facts that the s-TiN film has a rougher surface and a lower stress level and a higher oxygen content than the a-TiN film. Also the ashesion strength was degreaded with increasing the TIN film thickness because of the increase of the TiN film stress.

• Korean Journal of Food Science and Technology
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• v.33 no.3
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• pp.282-287
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• 2001

This study was carried out to investigate the difference of ginsenoside compositions in crude ginseng saponins prepared by five different methods including three new methods. Two known methods are hot methanol(MeOH) extraction/n-butanol(n-BuOH) fractionation and hot MeOH extraction/Diaion HP-20 adsorption/MeOH elution. Three new methods are hot MeOH extraction/cation AG 50W $absorption/H_2O$ elution/n-BuOH extraction, cool MeOH extraction/Diaion HP-20 adsorption/MeOH elution and direct extraction with ethyl acetate(EtOAc)/n-BuOH. Analysis of ginsenoside composition in the crude saponins by conventional HPLC/RI(Refractive Index) did not show great difference between methods except EtOAc/n-BuOH method. However, HPLC/ELSD (evaporative light scattering detector) employing gradient mobile phase afforded fine resolution of ginsenoside Rf, $Rg_1$ and $Rh_1$, and great difference of ginsenoside compositions between methods. LC/MS revealed that large amount of prosapogenins were produced during the pass through the cation exchange (AG 50W) column being strongly acidic. Six major ginsenosides such as $Rb_1,w;Rb_2,$ Rc, Rd, Re and $Rg_1$, 5 prosapogenins and one chikusetsusaponin were identified by LC/MS. A newly established HPLC method employing ODS column and gradient mobile phase of $KH_2PO_4/CH_3CN$ revealed that malonyl ginsenosides were detected only in the crude saponin obtained from cool MeOH extraction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.