• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.170-173
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• 2010

Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.168-172
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• 2006

We studied the magnetic and the related electronic properties of Ni-doped rutile $TiO_{2-{\delta}}$ films (including oxygen deficiency $\delta$) prepared using a sol-gel method. A room-temperature ferromagnetism was observed in the $TiO_{2-{\delta}}$ : Ni films with the saturation magnetization ($M_S$) decreasing with increasing Ni doping and remaining constant above 6 at% Ni doping. The observed ferromagnetism below 6 at% Ni doping is interpreted as due to magnetic polaron formed by a trapped electron in oxygen vacancy and magnetic impurity ions around it. For small Ni doping, $M_S$ up to $3.7{\mu}B/Ni$ was obtained. The ferromagnetism for Ni doping above 6 at% is interpreted as due to the existence of Ni clusters that can explain the p-n conductivity transition observed by Hall effect measurements.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.5
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• pp.312-317
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• 2005

The precipitation process in Cu-0.2 wt.%Cr-0.05 wt.%Zr alloys has been studied by electrical electrical resistivity measurements. The kinetics of precipitation could be well described by Johnson-Mehl-Avrami equation, $f(t)=1-\exp(-kt^n)$. The values of n were found to be in the range of 0.36~0.42 at first stage and 1.3~1.6 at second stage. The activation energy was determined by cross-cut method and was 80~89 kJ/mol. The value is similar to the energy for the migration of either a vacancy or a vacancy-solute complex through the lattice.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.104-108
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• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.

• Nuclear Engineering and Technology
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• v.17 no.2
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• pp.116-128
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• 1985

Considering vacancy generation and migration in grain and sink at grain boundary, a mechanistic densification model which is dependent on UO$_2$ temperature and microstructure has been developed. This densification model is a function of time, fission rate, temperature, density, pore size distribution and grain size. The resultant equation derived in this model which is different from Assmann and Stehle's resultant equations for four temperature regions, can be applied directly for all the pellet temperatures. The predictions of the present densification model very well agreed with the experimental data. This model well predicts absolute magnitude and trend in comparison with the empirical algorithm used in KFEDA code.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.169-175
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• 2001

Ozone has been widely applied to many industrial fields because of its strong oxidation power, Therefore, the studies have been carried out for the methods on an effective and high concentration ozone generation. The silent or surface discharge type ozone generators have been mainly used for high concentration ozone generation in many fields of applications. But these two types of ozone generators have shortcomings to be improved. In this study, the ozone generator which improved the shortcomings of above ozone generators was proposed and fabricated for the high concentration ozone generation. And the proposed ozone generator could generate the surface and barrier discharge simultaneously. For this purpose, a mesh type discharge electrode was proposed and studied as a function of the widths output maximum ozone concentration of 2.96[vol%] was obtained at 5.6[kV], 830[mA], for 0.3[mm] width and 0.8[mm] vacancy of the mesh electrode and gap spacing of 0.65[mm] respectively.

• Transactions of Materials Processing
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• v.30 no.5
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• pp.226-235
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• 2021

The strain aging behavior of a low carbon dual phase steel was examined in two conditions: representing room temperature strain aging (100 ℃ × 1 hr after 7.5 % prestrain) and bake hardening process (170 ℃ × 20 min after 2 % prestrain), basing on carbon effective diffusion and dislocation distribution. The first principle calculations revealed that (Mn or Cr)-vacancy-C complexes exhibit the strongest attractive interaction compared to other complexes, therefore, act as strong trapping sites for carbon. For room temperature strain aging condition, the carbon effective diffusion distance is smaller than the dislocation distance in the high dislocation density region near ferrite/martensite interfaces as well as ferrite interior considering the carbon trapping effect of the (Mn or Cr)-vacancy-C complexes, implying ineffective Cottrell atmosphere formation. Under bake hardening condition, the carbon effective diffusion distance is larger compared to the dislocation distance in both regions. Therefore, formation of the Cottrell atmosphere is relatively easy resulting in to a relatively large increase in yield strength under bake hardening condition.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.12-16
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• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.96-100
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• 2023

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O₂ flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10^-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• Journal of Radiation Protection and Research
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• v.18 no.1
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• pp.63-70
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• 1993

Double ionization of the K- shell accompanying K- shell electron capture of the 0.035 MeV transition of $^{125}I$ has been studied by counting coincidences between $K_{\alpha}$ hypersatellite X-rays and Ka satellite X-rays emitted when double vacancies are filled. The $^{125}I\;and\;^{125}Te^m$ source materials were used in the measurement. We obtained the coincidence spectrum using two NaI(T1) detectors and a Ge(Li) detector and TAC(Time-to-Amplitude Converter), and then analysed the measured coincidence number $N(K_{\alpha}^{II},\;K_{\alpha}^s)$, the total number $N(K_{\alpha})$ of K X-ray. The probability per K-shell electron capture that a double vacancy is formed, $P_{KK}$ is formed, $P_{KK}$ is found to be $2.15{\times}10^{-4}$.