• Polymer(Korea)
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• v.33 no.3
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• pp.224-229
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• 2009

The dielectric properties of semi-IPN poly(phenylene oxide)(PPO) blend/$BaTiO_3$(BT) composites are investigated. The composites are fabricated via melt-mixing of crosslinker and peroxide in precursor PPO composite obtained by precipitating the suspension consisted of PPO, BT and toluene into methylethyl ketone, poor solvent of PPO. The permittivity of the precursor PPO composites shows higher value than that of integral-blended PPO composites by extruder and coincides with the theoretical value calculated by logarithmic rule of mixture. The blend of PPO and cross-linked triallyl isocyanurate is most effective for lowering the permittivity and loss tangent owing to the suppression of the orientation polarization of matrix. In contrast, 4,4'-(1,3-phenylene diisopropylidene) bisaniline, which has amine unit in its structure, increases the permittivity as well as loss tangent of the composite, but it has the ability to densify the matrix resin and the interfacial adhesion between the matrix and filler to improves flexural strength and modulus.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.65-70
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• 2015

A study on thermal properties for a single-layer metal and two-layer composites was investigated for the heat-sink application. For the single-layer metal, an aluminum alloy (Al6061) was selected. A screen printed aluminum nitride (AlN) layer on the Al6061 substrate was chosen for the two-layer composites. The thermal conductivity of the sample was determined from the thermal diffusivity measured by the light flash analysis (LFA), specific heat and density. Measured thermal property values were compared to calculated values using the data from the references. The thermal conductivity of composites with screen printed AlN layer on the Al6061 substrate decreased linearly with increasing the thickness of AlN layer. Measured values of the thermal conductivity for composites with $53{\mu}m$ and $163{\mu}m$ thick AlN layers were $114.1W/m{\cdot}K$ and $72.3W/m{\cdot}K$, respectively. In particular, the thermal conductivity of the screen-printed AlN layer was demonstrated by appling the rule of mixture in view point of thermal resistivity. Measured values of the thermal conductivity for AlN layers with the thickness of $53{\mu}m$ and $163{\mu}m$ showed $9.35W/m{\cdot}K$ and $12.40W/m{\cdot}K$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Korean Society for information Management
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• v.28 no.3
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• pp.103-121
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• 2011

This study is to seek to apply resource types of RDA to KCR4. It is difficult to choose appropriate term and to embody FRBR model because GMD of KCR4 is the mixture of content-based vocabularies and carrier-based vocabularies. SMD is to need to reflect the current technological terms. Resource type of RDA was already developed to overcome limitation of AACR2's GMD, and would affect the world cataloging environment, therefore it is need to apply resource type of RDA to Korean cataloging rule. For this study, case study and survey were used. In case study, it was to scan all GMD term for one university library to build by programming and to grape librarian and users' potential need. In the survey by cataloging librarian, it was to figure out the current description of resource type in university library and to test RDA resource type. As a result, it was needed to revise the vocabulary to the obvious and user-understandable list. Also it was different in correction rate in RDA testing by resource type. Based on the case study and the survey, RDA resource type was applied to KCR4 resource list by adding term such as computer game in content type, and by inserting terms such as DVD, CD-ROM, Blu-Ray, computer file in carrier type. It also applied RDA description method and display means to KCR4. This study would apply RDA resource type to KCR4 and contribute to revise KCR4 resource type.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.138-147
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• 2001

The stochiometric mixtures mixture of evaporating materials for the $ZnIn_{2}S_{4}$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_{2}S_{4}$ single crystal thin film, $ZnIn_{2}S_{4}$ mixed crystal was deposited on throughly etched semi-insulting GaAs(100) in the Hot Wall Epitaxy(HWE) system. The sourceand substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_{2}S_{4}$ single crystal thin film was about 0.5$\mu\textrm{m}$/hr. The crystalline structure of $ZnIn_{2}S_{4}$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction (DCXD) measurement. The carrier density and mobility of $ZnIn_{2}S_{4}$ single crystal thin film measured from Hal effect by van der Pauw method are $8.51{\times}10^{17}{\textrm}{cm}^{-3}$, 291$\textrm{cm}^2$/V.s at $293^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $ZnIn_{2}S_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal filed splitting DCr were 0.0148eV and 0.1678 eV at $10^{\circ}$K, respectively. From the photoluminescence measurement of $ZnIn_{2}S_{4}$ single crystal thin film, we observed free excition($E_{X}$) typically observed only in high quality crystal and neutral donor bound exicton ($D^{\circ}$, X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9meV and 26meV, respectively. The activation energy of impurity measured by Haynes rule was 130meV.

• KDI Journal of Economic Policy
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• v.31 no.1
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• pp.169-206
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• 2009

This study stems from a question, "How should we understand the pattern of the Korean economy after the 1990s?" Among various analytic methods applicable, this study chooses a Structural Vector Autoregression (SVAR) with long-run restrictions, identifies diverse impacts that gave rise to the current status of the Korean economy, and differentiates relative contributions of those impacts. To that end, SVAR is applied to four economic models; Blanchard and Quah (1989)'s 2-variable model, its 3-variable extensions, and the two other New Keynesian type linear models modified from Stock and Watson (2002). Especially, the latter two models are devised to reflect the recent transitions in the determination of foreign exchange rate (from a fixed rate regime to a flexible rate one) as well as the monetary policy rule (from aggregate targeting to inflation targeting). When organizing the assumed results in the form of impulse response and forecasting error variance decomposition, two common denominators are found as follows. First, changes in the rate of economic growth are mainly attributable to the impact on productivity, and such trend has grown strong since the 2000s, which indicates that Korea's economic growth since the 2000s has been closely associated with its potential growth rate. Second, the magnitude or consistency of impact responses tends to have subsided since the 2000s. Given Korea's high dependence on trade, it is possible that low interest rates, low inflation, steady growth, and the economic emergence of China as a world player have helped secure capital and demand for export and import, which therefore might reduced the impact of each sector on overall economic status. Despite the fact that a diverse mixture of models and impacts has been used for analysis, always two common findings are observed in the result. Therefore, it can be concluded that the decreased rate of economic growth of Korea since 2000 appears to be on the same track as the decrease in Korea's potential growth rate. The contents of this paper are constructed as follows: The second section observes the recent trend of the economic development of Korea and related Korean articles, which might help in clearly defining the scope and analytic methodology of this study. The third section provides an analysis model to be used in this study, which is Structural VAR as mentioned above. Variables used, estimation equations, and identification conditions of impacts are explained. The fourth section reports estimation results derived by the previously introduced model, and the fifth section concludes.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1190-1196
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• 2002

Microwave dielectric properties and multilayer characteristics $(1-x)BiNbO_4-xCaNb_2O_6$ (0${\le}$x${\le}$1.0) ceramics were investigated as a function of $CaNb_2O_6$ content. In the composition range of 0.25${\le}$x${\le}$0.75, the mixture phases of $BiNbO_4$ with stibotantalate structure and $CaNb_2O_6$ with columbite structure were detected and secondary phase or phase transition were not detected. Dielectric constant (K) of $(1-x)BiNbO_4-xCaNb_2O_6$ ceramics was largely dependent on the existing phase and could be estimated by the dielectric mixing rule calculated from maxwell equation. Typically, dielectric constant (K) of 26, quality factor (Qf) of 4300 GHz and Temperature Coefficient of resonant Frequency (TCF) of -18 ppm/${\circ}C$ were obtained for $0.5BiNbO_4-0.5CaNb_2O_6$ specimens with 0.8 wt% $CuV_2O_6$ sintered at 1000${\circ}C$ for 3h. The deviation of X-Y shrinkage and camber value of the multilayers obtained from $0.5BiNbO_4-0.5CaNb_2O_6$ green sheet sintered at 850∼950${\circ}C$ for 20 min. were smaller than those of $BiNbO_4$ multilayers.