• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.13-16
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• 2002

Ru thin films were deposited on bi-axially textured Ni tape using rf-magnetron sputtering for a conductive buffer layer of high Tc superconductor applications. (002) textured Ni films were fabricated as the deposition temperature was over $600^{\circ}C$. Rocking curves of the films showed similar alignment to those the Ni tapes. The resistivity of the tapes fabricated below $600^{\circ}C$ was around 20$\mu\Omega$-cm which is good for the conductive layer for tape superconductor applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.286-291
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• 1998

$SrTiO_3$[ST] thin films were fabricated on $RuO_2$bottom electrodes by RF magnetron sputtering with various $Ar/O_2$ratio in sputtering gas. As the content of oxygen increases, the leakage current of ST films measured at $10^5$ V/cm decreases from $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$ to $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$, and the dielectric constant of ST films increases from $70(Ar/O_2=10/0)$ to $190(Ar/O_2=5/5)$. The improvement of electrical properties of ST films is mainly due to the structural modification of ST films such as better crystallinity, smooth surface morphology with the increase of oxygen content in the sputtering gas.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.358-359
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• 2006

Ru-C nano-composite films were prepared by MOCVD, and their microstructures and their electrode properties for oxygen gas sensors were investigated. Deposited films contained Ru particles of 5-20 nm in diameter dispersed in amorphous C matrix. The AC conductivities associating to the interface charge transfer between Ru-C composite electrode and YSZ electrolyte were 100-1000 times higher than that of conventional paste-Pt electrodes. The emf values of the oxygen gas concentration cell constructed from the nano-composite electrodes and YSZ electrolyte showed the Nernstian theoretical values at low temperatures around 500 K. The response time of the concentration cell was 900 s at 500 K.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1529-1534
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• 2018

We used in-situ synchrotron X-ray scattering to investigate phase transformations of octahedral tilted monoclinic $SrRuO_3$ (MSRO) and tetragonal SRO (TSRO) thin films on $SrTiO_3$ (STO) substrates. The octahedral tilted MSRO thin films were highly crystalline and the monoclinic distortion angle was $0.45^{\circ}$. The phase transition temperature from the MSRO to TSRO phase occurred at approximately $200^{\circ}C$ as a second order transition. Conversely, no phase transformations of the TSRO thin film occurred within the range from RT to $250^{\circ}C$. The octahedral $RuO_6$ rotation was strongly affected by the phase transformation in the SRO thin films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.182-183
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• 2009

플라즈마 원자층 증착법을 이용하여 Ru-TiN 빅막을 합성하였다. 박막 내 Ru의 함량은 Ru의 unit-cycle의 수에 따라 선형적으로 증가하였으며, Ru 함량이 증가함에 따라 박막의 비저항을 $3700{\mu}{\Omega}{\cdot}cm$에서 $190{\mu}{\Omega}{\cdot}cm$까지 자유롭게 조절할 수 있었다. Ru의 함량이 0.40 이상인 경우, Ru과 TiN 두물질이 교차 증착되어 서로의 결정 성장을 충분히 억제함으로서, 비정질구조를 가짐을 확인할 수 있었다. 또한, $O_2$ 분위기에서 열처리를 진행한 결과, Ru의 조성비가 0.40이상인 경우 $700^{\circ}C$까지 면저항의 변화가 거의 없음을 확인할 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.27-27
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.36-36
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.60-60
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.49-49
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• 1996