• Journal of the Korean Solar Energy Society
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• v.31 no.4
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• pp.48-56
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• 2011

Black cobalt solar selective coatings were prepared by thermal oxidation of electroplated cobalt metal on copper and nickel substrates. The optical properties and structure of the black cobalt selective coating for solar energy utilizations were characterized by glow discharge spectrometry (GDS), ultraviolet-visible-near infrared (UV-VIS-NIR) spectrometer, atom force microscopy(AFM) and X-ray photoelectron spectroscopy(XPS). The optical properties of optimum black cobalt selective coating prepared on copper substrate were a solar absorptance of 0.82 and a thermal emittance of 0.01. From the GDS depth profile analysis of these coatings, the concentration of cobalt particles near the interface was higher than at the surface, but oxygen concentration at the surface was higher than at the interface. These results suggest that the selective absorption was dominated by this chemical composition variation in the coating. The surface of this film exhibited morphology with root-mean-square(rms) roughness of about 144.3nm. XPS measurements data showed that several phases of Co coexist($Co_3O_4$,CoO) in the film.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• Journal of the Society of Naval Architects of Korea
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• v.58 no.4
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• pp.243-252
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• 2021

The present study aims to investigate the interaction of a wire-type turbulence stimulator and the laminar boundary layer on a flat plate by flow field measurement. For the towing tank tests, a one-dimensional Laser Doppler Velocimetry (LDV) attached on a two-axis traverse was used to measure the streamwise velocity component of the boundary layer flow in zero pressure gradient, disturbed by a turbulence stimulator. The wire diameter was 0.5 and 1.0 mm according to the recommended procedures and guidelines suggested by the International Towing Tank Conference. Turbulence development by the stimulator was identified by the skin friction coefficient, mean and Root Mean Square (RMS) of the streamwise velocity. The laminar boundary layer with the absence of the wire-type stimulator was similar to the Blasius solution and previous experimental results. By the stimulator, the mean and RMS of the streamwise velocity were increased near the wall, showing typical features of the fully developed turbulent boundary layer. The critical Reynolds number was reduced from 2.7×10⁵ to 1.0×10⁵ by the disturbances caused by the wire. As the wire diameter and the roughness Reynolds number (Rek) increased, the disturbances by the stimulator increased RMS of the streamwise velocity than turbulent boundary layer.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.81-86
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• 2004

A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6 inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as an etch uniformity and surface roughness. The etching uniformity on the whole wafer with and without megasonic irradiation were less than ${\pm}1\%$ and more than $20\%$, respectively. The initial root-mean-square roughness($R_{rms}$) of single crystal silicon is 0.23 nm. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566 nm and 66 nm, respectively. Comparing with the results, etching with megasonic irradiation achieved the Rrms of 1.7 nm on the surface after the $37{\mu}m$ of etching depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness after etching process. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics such as etch uniformity and surface roughness.

• Korean Journal of Remote Sensing
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• v.33 no.6_1
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• pp.947-960
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• 2017

Soil moisture plays an important role to affect the Earth's radiative energy balance and water cycle. In general, satellite observations are useful for estimating the soil moisture content. Passive microwave satellites have an advantage of direct sensitivity on surface soil moisture. However, their coarse spatial resolutions (10-36 km) are not suitable for regional-scale hydrological applications. Meanwhile, in-situ ground observations of point-based soil moisture content have the disadvantage of spatially discontinuous information. This paper presents an experimental soil moisture retrieval using Sentinel-1 SAR (Synthetic Aperture Radar) with 10m spatial resolution for cropland in South Korea. We developed a soil moisture retrieval algorithm based on the technique of linear regression and SVR (support vector regression) using the ground observations at five in-situ sites and Sentinel-1 SAR data from April to October in 2015-2017 period. Our results showed the polarization dependency on the different soil sensitivities at backscattered signals, but no polarization dependence on the accuracies. No particular seasonal characteristics of the soil moisture retrieval imply that soil moisture is generally more affected by hydro-meteorology and land surface characteristics than by phenological factors. At the narrower range of incidence angles, the relationship between the backscattered signal and soil moisture content was more distinct because the decreasing surface interference increased the retrieval accuracies under the condition of evenly distributed soil moisture (during the raining period or on the paddy field). We had an overall error estimate of RMSE (root mean square error) of approximately 6.5%. Our soil moisture retrieval algorithm will be improved if the effects of surface roughness, geomorphology, and soil properties would be considered in the future works.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.442-443
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium zinc oxide (IZO) films grown on $SiO_2$/PES/$SiO_2$ substrate by a RF sputtering in pure Ar ambient at room temperature were investigated. A sheet resistance of $13.5\;{\Omega}{\square}$, average transmittance above 85 % in 550 nm, and root mean square roughness of $10.5\;{\AA}$ were obtained even in the IZO layers grown at room temperature in pure Ar ambient. Without addition of oxygen gas during IZO sputtering process, we can obtain high quality IZO anode films from the specially synthesized oxygen rich IZO target. XRD result shows that the IZO films grown at room temperature is completely amorphous structure due to low substrate temperature. In addition, the electrical and optical properties of the flexible OLED fabricated on IZO/$SiO_2$/PES/$SiO_2$ is critically influenced by the electrical properties of a IZO anode. This findings indicate that the IZO/$SiO_2$/PES/$SiO_2$ is a promising anode/substrate scheme for realizing organic based flexible displays.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.277-281
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• 2009

Superhydrophobic $SiO_2$ thin films were successfully fabricated on a glass substrate by sol-gel method. To fabricate $SiO_2$ thin film with a high roughness, $SiO_2$ nano particles were added into tetraethoxysilane (TEOS) solution. The prepared $SiO_2$ thin film without an addition of $SiO_2$ nano particles showed a very flat surface with ca. 1.27 nm of root mean square (RMS) roughness. Otherwise, the $SiO_2$ thin films fabricated by using coating solutions added $SiO_2$ nano particles of 1.0, 2.0 and 3.0 wt% showed a RMS roughness of ca. 44.10 nm, ca. 69.58 nm, ca. 80.66 nm, respectively. To modify the surfaces of $SiO_2$ thin films to hydrophobic surface, a hydrophobic treatment was carried out using a fluoroalkyltrimethoxysilane (FAS). The $SiO_2$ thin films with a high rough surface were changed from hydrophilic to hydrophobic surface after the FAS treatment. Especially, the prepared $SiO_2$ thin film with a RMS roughness of 80.66 nm showed a water contact angle of $163^{\circ}$.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.38 no.2
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• pp.215-226
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• 2018

The purpose of this study is to improve the accuracy of the urban runoff and drainage network analysis by using the observed water level in the drainage network. To do this, sensitivity analysis for major parameters of SWMM (Storm Water Management Model) was performed and parameters were calibrated. The sensitivity of the parameters was the order of the roughness of the conduit, the roughness of the impervious area, the width of the watershed, and the roughness of the pervious area. Six types of scenarios were set up according to the number and types of parameter considering four parameters with high sensitivity. These scenarios were applied to the Seocho-3/4/5, Yeoksam, and Nonhyun drainage basins, where the serious flood damage occurred due to the heavy rain on 21 July, 2013. Parameter optimization analysis based on PEST (Parameter ESTimation) model for each scenario was performed by comparing observed water level in the conduits. By analyzing the accuracy of each scenario, more improved simulation results could be obtained, that is, the maximum RMSE (Root Mean Square Error) could be reduced by 2.41cm and the maximum peak error by 13.7%. The results of this study will be helpful to analyze volume of the manhole surcharge and forecast the inundation area more accurately.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.112-112
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• 2009

In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.