• Bulletin of the Korean Chemical Society
• /
• v.33 no.10
• /
• pp.3458-3460
• /
• 2012

• Bulletin of the Korean Chemical Society
• /
• v.32 no.spc8
• /
• pp.3149-3151
• /
• 2011

• Journal of Powder Materials
• /
• v.12 no.4 s.51
• /
• pp.255-260
• /
• 2005

Direct solid state synthesis by hot pressing has been applied in order to produce high efficiency $Zn_4Sb_3$ bulk specimens. Single phase $Zn_4Sb_3$ with 98.5% of theoretical density was successfully produced by direct hot pressing of elemental powders containing 1.2 at.% excess Zn. Thermoelectric properties as a function of temperature were investigated from room temperature to 600 K and compared with results of other studies. Transport properties at room temperature were also evaluated. Thermoelectric properties of single phase $Zn_4Sb_3$ materials produced by direct synthesis were measured and are comparable to the published data. Direct solid state synthesis by hot pressing provides a promising processing route in this material.

• Korean Journal of Materials Research
• /
• v.15 no.7
• /
• pp.473-479
• /
• 2005

Thermoelectric $Zn_4Sb_3$ alloys were synthesized by a conventional powder metallurgy process consisting of solid state reaction and hot pressing. Single phase $Zn_4Sb_3$ was successfully produced by the annealing of cold compact starting with the mixed elemental powders, and subsequent hot pressing yielded single phase bulk specimens without microcracks. Phase transformations in this alloy system during synthesis were investigated using XRD, SEM and EDS. Thermoelectric properties as a function of temperature were investigated from room temperature to 600 K and compared with results of analogue studies. Transport properties at room temperature were also evaluated. Thermoelectric properties of single phase $Zn_4Sb_3$ materials produced by this process are comparable to the published data. Synthesis by solid state reaction and hot pressing offers a potential processing route to produce a bulk $Zn_4Sb_3$.ٓ

• Journal of the Korean Ceramic Society
• /
• v.31 no.4
• /
• pp.443-447
• /
• 1994

Compacts of mixed SiO2-Si powder were liquid phase sintered at 145$0^{\circ}C$ for up to 60 min in a hydrogen atmosphere. In contrast to the conventional microstructures of liquid phase sintered materials, the specimens showed that the solid phase of SiO2 formed a matrix while the liquid phase of Si was the dispersed in the solid matrix. The dispersion of liquid Si pockets was attributed to the high wetting angle of liquid Si on solid SiO2. Because of relatively high solubility of SiO2 in liquid Si at 145$0^{\circ}C$, SiO2 particles accommodated their shape via a solution-reprecipitation process. The liquid Si pockets grew by coalescing with their neighbour pockets. In the latter stage of the sintering, plate-shape grains appeared in the liquid Si pockets. The grains were SiO2 phase precipitated from the liquid Si which was oversaturated with oxygen during cooling to room temperature. By the formation and subsequent removal of the gaseous SiO phase due to the reaction between SiO2 and Si, the specimens became porous.

• Journal of the Korean Chemical Society
• /
• v.57 no.2
• /
• pp.204-209
• /
• 2013

We calculate in this study the pressure dependence of the frequencies for the Raman modes of A ($A_g$), B ($A_g$, $B_{2g}$) and C ($B_{1g}$, $B_{3g}$) at constant temperatures of 274 and 294K (room temperature) for the solid phase I of benzene. Using the mode Gr$\ddot{u}$neisen parameter of each lattice mode, which correlates the pressure dependence of the crystal volume and the frequency, the Raman frequencies of those modes are computed for phase I of benzene. Our results show that the Raman frequencies of the three lattice modes (A, B and C) increase as the pressure increases, as expected. The temperature effect on the Raman frequencies is not significant, which can be explained by the experimental measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.989-992
• /
• 2001

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.794-799
• /
• 1997

Poly-Si films have been prepared by solid phase crystallization of LPCVD(low-pressure CVD) amorphous silicon. The crystallinity of poly-Si films has been derived from UV reflectance spectrum and lies in the range between 70% and 80% . From XRD measurement the peak at 28.2$^{\circ}$from (111) plane is dominantly detected in the SPC poly-Si films, The average grain size of poly-Si film is determined by the image of SEM and varies from 4000 $\AA$ to 8000$\AA$. The electrical conductivity of as-deposited amorphous silicon film is about 2.5$\times$10$^{-7}$ ($\Omega$.cm)$^{-1}$ , and 3~4$\times$10$^{-6}$ ($\Omega$.cm)$^{-1}$ of room temperature conductivity is the SPC poly-Si films. The conductivity activation energies are 0.5~0.6 eV or the 500$\AA$-thick poly-Si films.

• Proceedings of the KSME Conference
• /
• 2000.04b
• /
• pp.138-143
• /
• 2000

A new method of measuring the thermal diffusivity of solid material at room temperature with photothermal displacement method is proposed. The influence of the parameters on phase lag was studied. From the minimum position of phase of measured deflection with respect to the pump beam the thermal diffusivity of the materials can be obtained. The minimum position of phase is determined using multiparameter least-square regression fitting. The experimental values for different samples obtained by applying new method are in good agreement with the literature values.

• Journal of Korea Foundry Society
• /
• v.40 no.2
• /
• pp.16-24
• /
• 2020

The effect of a heat treatment on the microstructure and mechanical properties of Inconel 713C alloy vacuum investment castings were investigated. The microstructure of the as-cast state was observed, showing well-developed dendrite structures and distributed carbide particles and solidified massive precipitates in the grain or grain boundary during solidification, in this case the γ′ phase and MC particles. During a heat treatment, the γ phase matrix was reinforced by solid solution elements, carbide particles from the film morphology precipitated along the grain boundary, and many micro-precipitates of second γ′ phases 0.2 ㎛~2 ㎛ in size were newly formed in the γ phase matrix according to SEM-EDS analysis results. The tensile strength at a high temperature (850℃) decreased slightly becoming comparable with the room-temperature result, while the hardness value of the specimen after the vacuum heat treatment increased by approximately 19%, becoming similar to that of the as-cast condition. However, the impact values at room temperature and low temperature (-196℃) were approximated; this alloy was mostly not affected by an impact at a low temperature. In the observations of the fracture surface morphologies of the specimens after the tensile tests, the fractures at room temperature were a mix of brittle and ductile fractures, and an intergranular fracture in the inter-dendrite structure and some dimples in the matrix were observed, whereas the fractures at high temperatures were ductile fractures, with many dimples arising due to precipitation. It was found that a reinforced matrix and precipitates of carbide and the γ′ phase due to the heat treatment had significant effects, contributing greatly to the excellent mechanical properties.