• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• 대한전자공학회논문지
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• 제4권1호
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• pp.27-39
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• 1967

강유전재료로서 가장 대표적이며 전자부품으로서 많이 사용되는 것 중의 하나인 titan 산 barium 자기 capacitor의 제조방법과 그 특성을 기술하였다. 산화 titanium과 탄산 barium을 1:1 mole비로 하고 이에 몇가지의 광화제를 첨가해서 소성한 어떤 자기결정의 전기적특성은 표준치와 잘 일치하였으며 절록저항, 온도계수 및 흡수율은 일반적으로 볼 수 있는 치를 많이 넘었다. 이러한 특성을 낼 수 있는 적당한 제조방법을 알아낼 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.297.2-297.2
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• 2014

Strong exciton-photon coupling in microcavities have generated an intense research effort since quasiparticles called exciton polaritons are produced and shows interesting phenomena. Most of studies have been done with GaAs based microcavities at cryogenic temperature. Recently, GaN material which has large exciton binding energy and oscillator strength has much attention because strong coupling between photon and exciton could be realized at room temperature. However, fabrication of high quality microcavity using GaN is challengeable due to the large mismatch between the lattice and the thermal expansion coefficient in GaN based distributed Bragg mirror. Here, we observed strong coupling regime of exciton-photon in GaN micro-rods which were grown by metalorganic vapour phase epitaxy (MOCVD) on Si substrate. Owing to the hexagonal cross-section of micro-rod, whispering gallery modes of photon are naturally formed and could be coupled with exciton in GaN. Using angle-resolved micro-photoluminescence measurement, exciton polariton dispersion curves were directly observed from GaN micro-rod. We expect room temperature exciton polariton condensation could be realized in high quality GaN micro-rod.

• 센서학회지
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• 제30권6호
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• pp.451-455
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• 2021

Porous copper bromide (CuBr) films are highly advantageous for detecting ammonia (NH₃). The fabrication of porous CuBr films requires complex high-temperature processes or multistep processes. Herein, we report the uncomplicated preparation of porous CuBr films by a spin-coating method and the films' excellent NH₃ sensing properties. The porous films were prepared by spin-coating 100, 150, and 200 mM CuBr solutions, and then dried in a vacuum oven for 2 h. All the films showed a high NH₃ response; in particular, the film prepared using a 100 mM CuBr solution showed an extremely high response (resistance ratio = 852) to 5 ppm NH₃. The film also showed fast response and recovery times, 272 s and 10 s respectively, even at room temperature. The outstanding NH₃ sensing characteristics were explained in relation to the porosity and thickness of the prepared films. The high-performance NH₃ sensors used in this study can be used for both indoor air quality and environmental monitoring applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2020-2021
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• 2004

Distributed optical feedback by gain coupling in V-groove quantum-wire lasers is investigated using InGaAs/AlGaAs active materials grown by metalorganic chemical vapor deposition (MOCVD). In order to avoid grating overgrowth during the fabrication of DFB structures, a newly developed constant MOCVD growth method is employed. Gain anisotropy in emission spectra near Bragg wavelength, resulting from optical feedback along the DFB direction, is clearly observed at room temperature.

• 한국진공학회지
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• 제2권4호
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• pp.462-467
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• 1993

ECR PECVD(Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition )장치를 이용하여 (100) 실리콘 기판 위에 실리콘 산화막을 상온에서 증착하였다. 기체 유량비(SiH4/O2)가 막의 성질에 미치는 영향을 고찰하여 최적의 증착 조건을 도출하였다. 기체 유량비가 0.071일 때 비가역 파괴 전장은 9~10MV/cm 이었고, 4~5MV/cmm의 전장하에서 누설 전류는 ~10-11 A/$ extrm{cm}^2$이었다. 이러한 수치들은 액정 표시 소자용 박막 트랜지스터와 같이 저온의 제조공정이 요구되는 소자를 만들기에 충분하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.139-142
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• 1995

Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 제15회 정기총회 및 동계학술발표회
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• pp.314-315
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• 2004

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1997년도 추계총회 및 학술발표회 논문집
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• pp.71-75
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• 1997

A new series of water-soluble conjugated aromatic polyimines containing sulfonate groups have been synthesized via polycondensation reaction between diamines and dialdehydes at room temperature. Self-assembled multilayer films consisting each polyimine as a polyanion and poly(diallyldimethylammonium hydrochloride) as a polycation were fabricated successfully by alternate deposition in corresponding aqueous solutions.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.10-13
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• 2006

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-Sic/SOI pressure sensor presents a high-sensitivity and excel lent temperature stability.