• Journal of the Korean Applied Science and Technology
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• v.36 no.4
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• pp.1410-1419
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• 2019

In this research, it is to find a method that frost does not form on the outdoor unit to develop a heat pump capable of heating in cold regions. For this reason, we produced an incubator capable of creating an environment of -25℃, and constructed an experimental apparatus so that experiments in the room were possible. However, it is necessary to grasp the characteristics of the air reaching the front of the heat pump outdoor unit installed in the experimental apparatus, and flow analysis was performed using ANSYS CFX, which is general-purpose software. As a result, the flow velocity of the air reaching the front of the outdoor unit in the outdoor unit chamber in the entire region of the simulation conditions (5.0 to 7.5 m/s) has many differences in the upper and lower portions, resulting in a natural state. It turned out that the condition can not be satisfied. Therefore, it is determined that it is necessary to additionally install a frequency divider at the front of the outdoor unit to make the flow velocity constant.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.18 no.2
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• pp.119-123
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• 1985

The author carried out an experiment to find out the response of rockfish, Sebastes schlegeli(Hilgendorf) to the color lights. The experimental tank($360L{\times}50W{\times}55H\;cm$) was set up in a dark room. Six longitudinal sections with 60 cm intervals are marked in the tank to observe the location of the fish. Water depth in the tank was kept 50 cm level. Light bulbs of 20 W at the both ends of the tank projected the light horizontally into the tank. Two different colored filters were selected from four colors of red, blue, yellow, and white, and they were placed in front of the light bulbs to make different colors of light. Light intensity were controlled by use of auxiliary filters intercepted between the bulb and the filter. The fishes were acclimatized in the dark for 50 minutes before they were employed in the experiment. Upon turning on the light, the number of fish in each section was counted 40 times in 30 second intervals, and the mean of the number of fish in each section was given as the gathering rate of the fish. The colors favourited by the fish was found in the order of blue, white, yellow and red in day time, and yellow, blue, white and red at night time. The gathering rate of fish on illumination period was not constant and fluctuated with irregularity. The difference of the gathering rate on two different colors of light was great and the difference was larger in day time than in night time.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.17 no.3
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• pp.191-196
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• 1984

The author carried out an experiment to find out the response of filefish, Navodon modestus(Gunther) to the colored lights. The experimental tank($360L{\times}50W{\times}55Hcm$) was set up in a dark room. Six longitudinal sections with 60 cm intervals are marked in the tank to observe the location of the fish. Water depth in the tank was kept 50 cm level. Light bulbs of 20W at the both ends of the tank projected the light horizontally into the tank. Two different colored filters were selected from four colors of red, blue, yellow, and white, and they were placed in front of the light bulbs to make different colors of light. Light intensity were controlled by use of auxiliary filters intercepted between the bulb and the filter. The fishes were acclimatized in the dark for 50 minutes before thor were employed in the experiment. Upon turning on the light, the number of fish in each section was counted 40 times in 30 second intervals, and the mean of the number of fish in each section was given as the gathering rate of the fish. The colors favourited by the fish was found in the order of blue, white, yellow and red. The gathering rate of fish on illumination period was not constant but varied randomly. The difference of the gathering rates on two different colors of light was rather in significant, however the difference was larger in the day time than in the night time.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.3
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• pp.153-159
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• 2001

A system simulation program was developed for a multi-type inverter heat pump. Electronic expansion valve(EEV) was used to extend the capacity modulating range of the heat pump as expansion device. The program was also developed to calculate actual system performance with the building load variation with climate during a year. The performance variation of a multi-type hat pump with two EEV and an inverter compressor was simulated with compressor speed, capacity, and flow area of the EEV. As a result, the optimum operating frequency of the compressor and openings of the expansion device were decided at a given load. As compressor speed increased, he capacity of heat pump increased, the capacity of heat pump increased. Therefore flow area of EEV should be adjusted to have wide openness. Thus the coefficient of performance(COP) of the heat pump decreased due to increasement of compressor power input. The maximum COP point at a given load was decided according to the compressor speed. And under the given specific compressor speed and the load, the optimum openings point of EEV was also decided. Although the total load of indoor units was constant, the operating frequency increased as the fraction of load in a room increased. Finally ad the compressor power input increased, the coefficient of performance decreased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.220-228
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• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.326-326
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• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.350-354
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• 2009

$Al_{2}O_{3}$ thin films were deposited on GaN(0001) by using a Remote Plasma Atomic Layer Deposition(RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of $25{\sim}500^{\circ}C$. The growth rate per cycle was varied with the substrate temperature from $1.8{\AA}$/cycle at $25^{\circ}C$ to $0.8{\AA}$/cycle at $500^{\circ}C$. The chemical structure of the $Al_{2}O_{3}$ thin films was studied using X-ray photoelectron spectroscopy(XPS). The electrical properties of $Al_{2}O_{3}$/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a $300^{\circ}C$ process temperature were excellent, a low electrical leakage current density(${\sim}10^{-10}A/cm^2$ at 1 MV) at room temperature and a high dielectric constant of about 7.2 with a thinner oxide thickness of 12 nm. The interface trap density($D_{it}$) was estimated using a high-frequency C-V method measured at $300^{\circ}C$. These results show that the RPALD technique is an excellent choice for depositing high-quality $Al_{2}O_{3}$ as a Sate dielectric in GaN-based devices.