• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.42-45
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$+yZrO$_2$wt% (x=1.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed and ZrO$_2$ contents were studied. All BSCT specimens contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and ZrO$_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of ZrO$_2$./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.360-363
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• 1997

The method of estimating life time of epoxy composites which be widely used for transformers has been studied in this paper. The breakdown properties of specimens are observed by appling high AC voltage at the room temperature from a series of the experiments. Afterwards, the breakdown time was determined under the constant voltage below the lowest breakdown voltage. Also, V-t properties were found out using weibull distribution widely used in the applications of discrete data for estimating life time of epoxy composites and life exponent n was gained properly. when life exponent is gained is found out, the tong breakdown life time at used voltage can be estimated from breakdown experiments in short time using reverse law of n power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.480-483
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• 2000

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electrical properties of PI LB films were investigated at room temperature. At low electric field, ohmic conduction(I∝V) was observed and the calculated electrical conductivity was about 9.7$\times$10$^{-15}$ S/cm. At high electric field, conduction(I∝V$^2$) was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of LB film was about 7.5.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.21 no.1
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• pp.57-64
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• 1976

Enforcing germination to the premature seed green vernalization under constant vitalux-A illumination and exposing to higher room temperature during ripening stage, were successively applied during wheat and barley raising for the sake of the accelerating generation advancement in greenhouse. By application of this method, the winter habit variety 'Buheung' required only 77 days for 1 generation and could raise 4.5 generations during one year. one year.

• Journal of the Korean Society of Combustion
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• v.17 no.4
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• pp.44-50
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• 2012

The present study was conducted to investigate the flame instability(evaluated by Markstein length and cellular instability) and laminar burning velocity in a constant volume combustion chamber at room temperature and elevated pressure up to 0.3 MPa to suggest the possibility of utilizing mixtures of syngas added DME-air premixed flames in internal combustion engines. The experimentally measured laminar burning velocities were compared to predictions calculated the PREMIX code with Zhao reaction mechanism. Discussions were made on effects of syngas addition into DME-Air premixed flames through evaluating laminar burning velocity, Markstein length, and cellular instability. Particular concerns are focused on cellular instability caused by hydrodynamic instability and diffusive-thermal instability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.194-195
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• 2006

Aluminum oxide films directly grown on n-type 6H-SiC(0001) substrates were fabricated by RF magnetron sputtering system. Metal-insulator-semiconductor(MIS) C-V properties with aluminum oxide thin films showed hysteresis and f1at band voltage shift. The dielectric constant of the film calculated from the capacitance at the accumulation region was about 5. Typical gate leakage current density of film at room temperature was the order of $10^{-9}\;A/cm^2$ at the range of within 2MV/cm. The breakdown did not occur at the film within the measurement range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.565-570
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• 2016

In this work, the complex permittivity of epoxy resins is measured. Epoxy resins, epoxy with micro size fillers and epoxy with micro+nano alumina composites have been evaluated for dielectric properties according to frequency variation. The dielectric spectroscopy measurement and analyses are carried out in the frequency range of $10^{-2}Hz$ to 1MHz and constant to room temperature. The results of dielectric loss suggest that significant improvement in the electrical performance can be expected by using samples containing nano and micro fillers mixture when compared to materials containing only microfillers. As the result, we verified the specific characteristics of dielectric permittivity and dielectric loss namely, relative permittivity become low with improving dispersibility of nano+micro mixture composites and become rise with agglomerate of nano particles.

• Bulletin of the Korean Chemical Society
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• v.16 no.9
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• pp.810-813
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• 1995

Coherent anti-Stokes Raman scattering (CARS) spectra of HCl, N2, and the ν1 fundamental of C2H2 have been measured in the gas phase. The measured spectra show rotational structures which originate from the Q-branch transitions. The spectra have successfully been simulated with proper selection rules, line positions, and relative intensities from room temperature Boltzmann population distributions. The vibration-rotation interaction constant α of HCl in the ground electronic state has been measured from the rotationally resolved CARS spectra which is α=0.3076 cm-1. Possibilities of optical pumping and of measuring state specific energy distributions of molecules are discussed.

• Bulletin of the Korean Chemical Society
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• v.20 no.9
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• pp.1049-1055
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• 1999

Electrochemical oxidation of silicon (p-type Si(100)) at room temperature in ethylene glycol and in aqueous solutions has been performed by applying constant low current densities for the preparation of thin SiO2 layers. In-situ ac impedance spectroscopic methods have been employed to characterize the interfaces of electrolyte/oxide/semiconductor and to estimate the thickness of the oxide layer. The thicknesses of SiO2 layers calculated from the capacitive impedance were in the range of 25-100Å depending on the experimental conditions. The anodic polarization resistance parallel with the oxide layer capacitance increased continuously to a very large value in ethylene glycol solution. However, it decreased above 4 V in aqueous solutions, where oxygen evolved through the oxidation of water. Interstitially dissolved oxygen molecules in SiO2 layer at above the oxygen evolution potential were expected to facilitate the formation of SiO2 at the interfaces. Thin SiO2 films grew efficiently at a controlled rate during the application of low anodization currents in aqueous solutions.

• Korean Journal of Plant Resources
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• v.11 no.3
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• pp.245-251
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• 1998

Test plants with 10 days old primary leaves were indouclated by shaking infected seedlings with sporulating colonies over them in an inoculation room under the conditions of 20$\pm$1 $^{\circ}C$ with constant illumination of 2.500 lux and 100% realtive humidity. A seeding reaction of 4 days after inoculation appreared in the trisomic types as opposed to Tri-5B line had been symtoms of a fungus 3 days after inoculation. The infection types of 8 days after inoculation were recognized with higher susceptibility to each trisomics in A genomie than B-genome. Tri-2A line showed less condium and there appeared symptoms of a conditions of mottle and formed papilla, and haustorium was not formed. However, Tri-5B line had much condium one overall leaves and showed a symtom like necrosis compared with normal plant. Moreover, Tri-5B line showed high sensitivity and high germination number of condium. These results inferred that resistant gene located on 2A chromosome and susceptibility gene is located on the chromosome 5B.