• Journal of Magnetics
• /
• v.9 no.2
• /
• pp.52-59
• /
• 2004

As deposited and annealed MTJs with the structure of $Ta(5 nm)/Cu(10 nm)/Ta(5 nm)/Ni_{80}Fe_{20}(2 nm)/Cu(5 nm)/ Ir_{25}Mn_{75}(10 nm)/Co_{70}Fe_{30}(2.5 nm)/Al-O/Co_{70}Fe_{30}(2.5nm)/Ni_{80}Fe_{20}(t)/Ta(5nm)/Ni_{80}Fe_{20}(t)/Ta(5 nm)$, where t=10, 30, 60 and 100 nm were characterized by XRD and magnetic hysteresis loops measurements. The XRD measurements were done in grazing incidence $(GID scan-2{\theta})$ and ${\theta}-2{\theta}$ geometry, by rocking curve $(scan-{\omega})$ and pole figures in order to establish correlation between texture and crystallites size and magnetic parameters of exchange biased and interlayer coupling. The variations of shifting and coercivity field of free and pinned layers after annealing in $300^{\circ}C$ correlate with the improvement of ［111］ texture and grains size of $Ni_{80}Fe_{20}$ and $Ir_{25}Mn_{75}$ respectively. The exchange biased and the coercivity fields of the pinned layer linearly increased with increasing grain size of $Ir_{25}Mn_{75}$, The reciprocal proportionality between interlayer coupling and coercivity fields of the free layer and grain size of $Ni_{80}Fe_{20}$ was found. The enhancement of interlayer coupling between pinned and free layers, after annealing treatment, indicates on the correlated in-phase roughness of dipolar interacting interfaces due to increase of crystallites size of $Ni_{80}Fe_{20}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.91-91
• /
• 1999

광소자 기술은 정보 전달 및 저장 기술의 지속적인 증가 요구에 따라 발전을 거듭하여 왔다. 특히 광통신 및 저장 기술에서 광원으로 사용되는 레이저 다이오드는 안정되면서 쉽게 제작할 수 있어야 한다. 이온 주입 방법은 반도체 공정에서 광범위하게 사용되는 공정이며 이미 소자측면에서 안정성이 확보되었다고 볼 수 있으나 대부분 메모리 등의 실리콘 반도체에서 이용되어 왔다. 최근에는 화합물 반도체 분야에서도 적용하는 예가 증가되고 있으나 광원으로 사용되는 레이저 다이오드의 경우는 우수한 품질의 반도체 층이 요구되며 따라서 damage가 큰 이온 주입 방법을 이용한 연구는 아직 많이 이루어져 있지 않다. 본 연구에서는 레이저 다이오드 구조의 성장측에 국부적으로 Fe 이온을 주입하여 도파로를 형성하여 광을 구속하여 도파시키는 동시에 전기적으로도 도파로 부분으로만 다이오드가 형성되도록 하고자 한다. 먼저 p층의 전기적 절연에 필요한 조건을 확보하기 위하여 CBE를 사용하여 Fe가 doping 된 SI-InP wafer 위에 p-InP (Be:5x1017 cm-3)층을 1.2$mu extrm{m}$ 성장한 후 ohmic 층으로 p-InGaAs (Be:1x1019 cm-3)을 0.1$\mu\textrm{m}$ 성장한 시료에 고에너지 이온 주입 장치를 사용하여 Fe 이온을 1MeV, 1.6meV의 에너지에 각각 1x1014cm-2, 2x1014cm-2 의 dose로 전면에 implant 하였다. 이 시료를 tube furnace에서 500, 600, $700^{\circ}C$각각 10분씩 annealing 한 후 재성장을 확인하기 위하여 DCXRD을 측정하였다. 그림 1은 DCXRD rocking curve로 annealing 하기 전 후의 In rich에서 side peak의 감소를 확인 할 수 있었는데 이는 damage가 어느 정도 복구되었음을 의미한다. 또한 절연 특성을 확인하기 위하여 ohmic metal을 증착하여 Hall 효과를 측정하였다. 그림 2에 보이는 것과 같이 annealing 온도가 증가함에 따라 면저항이 크게 증가함을 볼 수 있으며 이온 주입하기 전의 시료에 비해 104 이상의 저항을 갖을 수 있다. 향후 이러한 결과를 바탕으로 1.55$\mu\textrm{m}$ LD 구조에서 발진 특성을 관찰할 계획이다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.3
• /
• pp.252-257
• /
• 2000

To investigate the thermal preheating effect of the GaAs substrate exerted on the ZnS epilayers for the first time, ZnS epilayers were grown on the GaAs (100) substrate by hot wall epitaxy. The thermal preheating temperature was $450^{\circ}C$~$660^{\circ}C$. The full width at half maximum values of double crystal rocking curve were the smallest for the ZnS epilayers grown on the GaAs thermally preheated at around both $500^{\circ}C$ and $600^{\circ}C$. However, photoluminescence characteristics of ZnS epilayers were better at $600^{\circ}C$ than at $500^{\circ}C$. Therefore, it was shown that the optimum preheating temperature of the GaAs substrate for the growth of high quality ZnS epilayer was around $600^{\circ}C$. From these experimental results, it was shown that the crystal quality and the PL properties of ZnS epilayers were enhanced for the GaAs substrates thermally preheated at $600^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.1
• /
• pp.12-16
• /
• 2004

In this study, we have investigated the development of the crystal growth stability and reproducibility for large and high-quality DAST. DAST crystal were grown from a saturated methanol solution by a slow cooling method and DAST was synthesized by the condensation of 4-methyl-n-methyl pyridinum tosylate, which was prepared from 4-pocoline and methyl toluenesulponate and 4-N-dimethyl amino-bezaldehyde in the presence of piperidine. We had synthesized DAST crystals in dry Argon atmosphere in order to avoid the formation of hydride organge co-crystals, DAST$.$$H_2O$. Since DAST molecules crystallize in a humid atmosphere, crystal structure become centrosymmetric, and then second order NLO (nonlinear optical) properties would be disappeared. We fixed the growth orientation of DAST crystal (001) surface. The crystal growth was proceeded at a cooling rate of $H_2O$/day and the cooling period is for 4 days. The dimensions of seed crystal was $2.5\times 3.6\times0.4\textrm{mm}^3$ and we have obtained a DAST crystal with the dimension of $10\times 10.5\times3.0\textrm{mm}^3$. The color of grown DAST crystal is red and it's surface appears to be metallic green.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.04b
• /
• pp.56-59
• /
• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.406-410
• /
• 2000

Using the hot-wall epitaxy method, we grew a $Hg_{1-x}Cd_xTe$ (MCT) thin film in-situ after growing (111) CdTe of 9 $mu \textrm{m}$ as a buffer layer. The value of FWHM of double crystal x-ray diffraction rocking curve was 125 arcsec and the surface morphology was clean with a small roughness of 10 nm. From measuring the photocurrent of the grown MCT thin film, the maximum peak wavelength and the cut-off wavelength were 1.1050 $\mu\textrm{m}$ (1.1220 eV) and 1.2632 $\mu\textrm{m}$ (0.9815 eV), respectively. This peak wavelength corresponds to the peak of the band gap due to the intrinsic transition of the photoconductor. Therefore, the MCT thin film could be used as the photoconducting detector sensing a near-IR wavelength band from 1.0 to 1.6 $\mu\textrm{m}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.107-107
• /
• 1998

GaN 에피택시 층의 전기적, 광학적 특성 및 표면 형상의 향상을 위한 전처리 공 정으로서 사파이어 기판의 질화 처리가 많이 행해지고 있는데 이는 표면에 질화 충올 형성시킴으로서 GaN 충과의 계면에너지 및 격자상수 불일치를 줄여 GaN 충의 성장을 촉진시킬 수 있기 때문이다 본 실험에서는 고 진공 하에서 유도 결합 플라즈마를 이용하여 사파이어 기판의 질화 처리를 행한 후 XPS와 AFM을 이용하여 기판 표면의 질소 조성과 표면 형상을 관찰하였다. 기판 표면의 질소 조성은 질소 가스의 유입량과 기판의 온도보다 칠화 시 간 및 RF-power에 의해 크게 좌우되나 표면 형상은 기판의 온도에 크게 영향올 받는 것으로 나타났다. 따라서 본 실험에서는 기판의 온도를 낮춤으로서 protrusion이 없는 매끈한 표면의 질화 충을 얻올 수 있었다. 핵생성 충의 성장 없이 450 oC의 저온에서 GaN 충올 성장시킨 결과 육방 대청성 의 wurtzite구조를 가지며 bas허 plane이 사파이어 기판과 in-plane에서 300 회전된 관계 를 갖고 있는 것올 XRD -scan으로 관찰하였다. 또한 GaN 충의 성장이 진행됩에 따라 결정성이 향상되고 있는 것이 뼈S ali맹ed channeling 실험올 통해 관찰되었으며 이는 G GaN 충의 두께 중가에 따라 결정성이 향상된다는 것올 의미한다 사파이어 기판의 질 화 처 리 시 간이 증가함에 따라 후속 성 장된 GaN 층의 bas외 pI뻐e에 대 한 XRD -rocking c curve의 반치폭이 감소하는 것으로 나타났는데 이는 기판의 표면이 질화 충으로 전환 됨에 따라 각 GaN island의 c-축이 잘 정렬됨올 의미한다. 또한 AFM으로 ~이 충의 표 면 형상올 관찰한 결과 기판의 질화 처리가 선행될 경우 lateral 방향으로의 G뼈 충의 성장이 촉진되어 큰 islands로 성장이 일어나는 것으로 관찰되었는데 이는 질화 처리가 선행될 경우 Ga과 N의 표면 확산에 대한 활성화 에너지가 감소되기 때문인 것으로 생 각된다 일반적으로 GaN 에피택시 충의 결정성의 향상과 lateral 생장올 도모하기 위하여 성장 온도를 증가시키지만 본 실험에서는 낮은 성장 온도에서도 결정성의 향상 및 l later빼 성장을 촉진시킬 수 있었으며 이는 저온 성장법에 의한 고품위의 GaN 에피택시 충 성장에 대한 가능성올 제시하는 것이다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.147-147
• /
• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.148-149
• /
• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• The Korean Journal of Ceramics
• /
• v.6 no.3
• /
• pp.258-261
• /
• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.