• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 추계학술대회논문집
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• pp.836-839
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• 2003

In this paper, we briefly introduce the test bench and test method of RWA micro-vibration. TAMAM RWA (Reaction Wheel Assembly) micro-vibration was measured on a KISTLER dynamic plate which can measure time signals of three orthogonal forces and torques simultaneously up to 400Hz, and test data was analyzed. Measured data were evaluated with respect to the wheel spin rate and the static/dynamic unbalances were estimated from the extracted first harmonic component. The estimated static and dynamic unbalances were 0.79gㆍcm and 17.4gㆍ$\textrm{cm}^2$ respectively. The resonance mode and two rocking modes were observed as a results of its frequency analysis. Several higher order harmonic components were observed, which comes from its rotor shape as well as the wheel bearing.

• 정보저장시스템학회논문집
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• 제7권2호
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• pp.47-52
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• 2011

This paper presents a method to improve vibration characteristics of servo track write (STW) fixture. STW fixtures supported by flexible mounts are subject to various vibration sources. Using Finite element analysis (FEA) vibration modes of the fixture are identified. The FEA results suggest certain vibration modes be reduced through design change of flexible mounts to improve vibration responses of the fixture. Based on layered flexible mounts theory a parametric study on shear and bending stiffness is performed to obtain a suitable flexible mount design leading to increased resistance to rocking motion. Experiments confirm improvement of vibration characteristics and drive performance through new mounts design.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.194-197
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• 1997

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the thick-fi lm GaN on AIN/Si substrates. We obtained substrate-free GaN. The foul t-width at half maximum of double crystal X-ray rocking curve from 350 ${\mu}{\textrm}{m}$ thick substrate-free GaN was ~1000 arcsec. The photoluminescence spectrum (at 20 K) shows the narrow bound exiton (I$_2$) line and wealth donor-acceptor pair recombination however. there was not observed deep donor-accepter pair recombination indicate the substrate-free GaN crystal prepared in this study are of high purity and high crystalline quality.

• Wind and Structures
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• 제7권1호
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• pp.13-28
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• 2004

A method of numerical analysis without conducting 3D wind tunnel model tests was examined in our previous study for predicting vortex-induced oscillation of bridge girders with span-wise varying geometry. The aerodynamic damping forces measured for plural wind tunnel 2D models were used in the analysis. A further study was conducted to examine the precision of solution obtained by this method. First, the responses of vortex-induced oscillation of two rocking models and a taut-strip bridge girder model with span-wise varying geometry were measured. Next, the responses of these models were numerically analyzed by means of this method, and then a comparison was made between the obtained $Vr-A-{\delta}_a$ contour diagram of each 3D model in the wind tunnel test and the diagram in the numerical analysis. Since close correlations were observed between each two $Vr-A-{\delta}_a$diagrams obtained in the model test and in the analysis in cases where the 3D model did not have strong three-dimensionality, our findings revealed that the predicted solution proved to be reasonably accurate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• 한국지진공학회논문집
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• 제23권1호
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• pp.19-29
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• 2019

Recent earthquakes in Korea caused some damages to stone pagodas and thereby awakened the importance of earthquake preparedness. Korean stone pagodas which have been built with very creative style of material use and construction method are worthy of world heritage. Each stone pagoda consists of three parts: top; body; and base. However each tower is uniquely defined by its own features, which makes it more difficult to generalize the seismic assessment method for stone pagodas. This study has focused on qualitative preliminary evaluation of stone pagodas that enables us to compare the relative seismic performance across major aspects among many various Korean pagodas. Specifically an analytical model for multi-block stone pagodas is to be proposed upon the investigation of structural characteristics of stone pagoda and their dynamic behavior. A strategy for seismic evaluation of heritage stone pagodas is to be established and major evaluation factors appropriate for the qualitative evaluation are identified. The evaluation factors for overall seismic resisting behavior of stone pagodas are selected based on the dynamic motions of a rigid block and its limit state. Numerical simulation analysis using discrete element method is performed to analyze the sensitivity of each factor to earthquake and discuss some effects on seismic performance.

• 한국결정성장학회지
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• 제24권4호
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• pp.135-139
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• 2014

수소화기상증착에피탁시로 성장된 GaN 단결정의 표면 특성을 정밀하게 측정하기 위해, 용융 KOH/NaOH 습식화학에칭법을 적용하였다. KOH/NaOH 습식화학에칭법에 에칭속도는 기존의 황산, 인산과 같은 etchant에 비해 느린데, 이는 불용성 코팅층의 형성에 의한 것이다. 따라서 이 방법으로 etch pits density를 더 효율적으로 평가할 수 있었다. 성장된 GaN 단결정을 XRD(X-Ray Diffraction), XRC(X-ray rocking curve)로 결정성을 분석하였으며, 에칭 특성과 표면 형상은 주자전자현미경을 이용하여 관찰하였다. 에칭 실험 결과 격자결함들이 독립적으로 잘 분리되어 있고 그들의 형태가 명확하게 나타나는 최적 에칭 조건은 $410^{\circ}C$, 25분이었다. 이 조건에서 얻은 결함밀도 값은 $2.45{\times}10^6cm^{-2}$이었으며, 이는 상업적으로 이용 가능 한 정도의 재료임을 확인할 수 있었다.

• 한국결정성장학회지
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• 제26권3호
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• pp.89-94
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• 2016

본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다.