• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.28-29
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.541-545
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• 2017

$Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films with a thickness of $5{\sim}10{\mu}m$ at the morphotropic phase boundary were fabricated by aerosol-deposition (AD), and their phase evolution and electrical properties were investigated. The microstructure of the AD PZT films revealed nanosized grains with a low crystallinity and a dense structure at room temperature. The AD PZT films showed a mixture of tetragonal and rhombohedral phases. The post-annealing temperature was varied to study the phase transition behavior. The crystallinity of the AD PZT films was enhanced by annealing at 450, 550, and $650^{\circ}C$ for 2 h. At $650^{\circ}C$, the tetragonal and rhombohedral phases reacted to form a bridge phase between the two phases. The polarization-electric field hysteresis loops of the AD PZT film annealed at $650^{\circ}C$ exhibited a smaller cohesive field and a lower slim hysteresis than the films annealed at 450 and $550^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.770-776
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• 2003

#140 mesh and #600 mesh wheels were adopted to grind (111) and (100) oriented single crystalline silicon wafer and the grinding induced change of the surface integrity was investigated. For this purpose, microroughness, residual stress and phase transformation were analyzed for the ground surface. Microroughness was analyzed using AFM (Atomic Force Microscope) and crystal structure was analyzed using micro-Raman spectroscopy. The residual stress and phase transformation were also analyzed after thermal annealing in the air. As a result, microroughness of (111) wafer was larger than that of (100) wafer after grinding. It was observed using Raman spectrum that the silicon was transformed from diamond cubic Si-I to Si-III(body centered tetragonal) or Si-XII(rhombohedral). Residual stress relaxation was also shown in cavities which were produced after grinding. The thermal annealing was effective for the recovery of the silicon phase to the original phase and the residual stress relaxation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.532-537
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• 2003

Crystallographic, electric, magnetic and heat transition properties of $\alpha$-Fe$_2$O$_3$ have been studied with a small addition of Eu impurities. Hematite($\alpha$-Fe$_2$O$_3$) is a basic ferromagnetic material having rhombohedral structure, which is similar to perovskites structure. Eu is a rare earth element that has an electric configuration of 4f$^{7}$ 6s$^2$. X-ray diffraction pattern of Fe$_{1-x}$ Eu$_{x}$O$_3$ (x = 0.00, 0.04, 0.06) shows an increament of a value when the amount of Eu impurities increased. The VSM data show an increment of magnetization by increasing the amount of Eu impurity. The one with x=0.06 shows the largest increment of magnetic remanence. The magnetic remanence varied from 0.49$\times$10$^{-3}$ emu/g to 0.62$\times$10$^{-3}$ emu/g when Eu impurity is increased by 2 %. Coercivity is decreased as Eu impurity is increased. Resistances is reduced significantly by Eu impurity. There is a clear difference in temperature-dependent resistance depending on the amount of Eu impurities. Especially, there are cusps between 150 K to 175 K. It indicates the change of electronic quantum states inside the atoms by rare earth impurities in rhombohedral structure. Temperature-dependent heat capacity shows that the most effective amount of Eu impurities is 6 %. %.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.292-292
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• 2011

TFT (Thin Film Transistor)에서 공정을 단순화 시키고, 가격을 하락시키기 위해서는 Poly-Si을 대체할 물질이 필요하다. 이 연구에서는 Chalcogenide Material의 하나인 GeTe 박막을 이용하여 TFT Channel으로 사용 가능한 물질인지 알아보기 위하여 Post-Annealing을 한 뒤, 상 변화에 따른 박막의 저항 변화, Carrier Concentration (cm-3)과 Mobility (cm2V-1s-1)의 변화를 알아보았다. Sputtering을 이용하여 증착한 GeTe 100 nm Thin Film 위에 Sputtering을 이용하여 SiO2 5 nm를 Capping Layer로 증착한 후, Post-Annealing을 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$로 온도를 변화 시키며 진행하였고, 이로 인하여 GeTe Thin Film에 외부의 영향을 최소화 하였다. 먼저 GeTe Thin Film의 Sheet Resistance를 측정한 결과는 300$^{\circ}C$ 까지 낮은 Sheet Resistance의 거동을 보이며 반면, 400$^{\circ}C$ 이상이 되면 높은 Sheet Resistance의 거동을 보인다. Hall Measurement를 통해, Carrier Concentration과 Mobility를 알아보았다. Carrier Concentration은 온도가 증가하면 1E+19에서 1E+21 까지 증가하며, Mobility는 감소하는 경향을 보인다. 500$^{\circ}C$ Post-Annealed GeTe Thin Film에서는 Resistivity가 상당히 높아 4 Point Probe (Range : 1 mohm/sq~2 Mohm/sq)로 측정이 불가능하다. XRD로 GeTe Thin Film을 분석한 결과 as-grown, 200$^{\circ}C$, 300$^{\circ}C$에서는 Cubic의 결정 구조를 보이며, Sheet Resistance가 급격히 증가한 400$^{\circ}C$, 500$^{\circ}C$에서는 Rhombohedral의 결정구조를 보인다. GeTe Thin Film은 400$^{\circ}C$ 이상의 Post-Annealing 온도에서 cubic 구조에서 Rhombohedral 구조로 상 변화가 일어난다. 위 결과를 통해, 결정 구조의 변화가 GeTe Thin Film의 저항, Carrier Concentration과 Mobility에 밀접한 영향이 미치는 것을 확인하였다.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.68-72
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• 2007

Optimum compositions for piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics were investigated in the range of $x=0{\sim}0.1$ covering rhombohedral to tetragonal phase regions. No impurity phases other than a perovskite phase were found and the grain size decreased with increasing x. A two-phase coexisting morphotropic phase area rather than boundary dividing rhombohedral and tetragonal phase regions appeared to exist at $x=0.05{\sim}0.08$. As for piezoelectric properties within morphotropic phase compositions, the piezoelectric constant ($d_{33}$) and the electromechanical coupling factor ($K_p$) showed peak values at x=0.065, 192 pC/N and 34%, respectively, indicating x=0.065 as an optimum composition for piezoelectric $(Bi_{0.5}Na_{0.5})_{(1-x)}Ba_xTiO_3$ ceramics.

• Journal of Powder Materials
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• v.18 no.5
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.160-165
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• 2015

Lead-free piezoelectric materials have been actively studied to substitute for conventional PZT based solid solution, $Pb(Zr_xTi_{1-x}O_3)$, which occurs unavoidable PbO during the sintering process. Among them, Bismuth Sodium Titanate, $Na_{0.5}Bi_{0.5}TiO_3$ (abbreviated as NBT) based solid solution is attracted for the one of excellent candidates which shows the strong ferroelectricity, Curie temperature (Tc), remnant polarization (Pr) and coercive field (Ec). Especially, the solid solution of rhombohedral phase NBT with tetragonal perovskite phase has a rhombohedral - tetragonal morphotropic phase boundary. Modified NBT with tetragonal perovskite at the region of MPB can be applied for high frequency ultrasonic application because of not only its low permittivity, high electrocoupling factor and high mechanical strength, but also effective piezoelectric activity by poling. In this study, solid state ceramic processing of NBT and modified NBT, $(Na_{0.5}Bi_{0.5})_{0.93}Ba_{0.7}TiO_3$ (abbreviated as NBT-7BT), at the region of MPB using 7 % $BaTiO_3$ as a tetragonal perovskite was introduced and the structure between NBT and NBT-7BT were analyzed using rietveld refinement. Also, the ferroelectric and piezoelectric properties of NBT-7BT such as permittivity, piezoelectric constant, polarization hysteresis and strain hysteresis loop were compared with those of pure NBT.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.325-325
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• 2007

The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.