• Title/Summary/Keyword: Rhombohedral

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Electrical Conductivity Properties of the $a-In_{2}Se_{3}$ Single Crystal ($a-In_{2}Se_{3}$ 단결정의 전기전도도 특성 연구)

  • 김형곤;김남오;이우선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.629-633
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    • 2001
  • Electrical properties of the $\alpha$-In$_2$Se$_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $\alpha$-In$_2$Se$_3$ single crystal has ' the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in c-axis. The transition temperatures of the stoichiometric $\alpha$-In$_2$Se$_3$ single crystal is 198.8$^{\circ}C$ according to the specimens. The temperature of $\alpha$longrightarrow$\beta$ phase transition decreased but the temperature of $\beta$longrightarrow$\alpha$ phase transition increased as the number of heating-cooling cycle increased.

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Variations of Ferroelectric Properties by Unit Cell Distortion of Pb(Zr, Ti)O3-Pb(Co, Nb)O3 Solid Solution in Morphotropic Phase Boundary (Morphotropic Phase Boundary 영역의 Pb(Zr, Ti)O3-Pb(Co, Nb)O3계 고용체의 격자변형에 따른 강유전 특성 변화)

  • 이전국;정형진
    • Journal of the Korean Ceramic Society
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    • v.25 no.6
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    • pp.694-698
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    • 1988
  • Pb(Zr, Ti)O3-Pb(Co, Nb)O3 systems were investigated by x-ray diffraction method. System contains rhombohedral, tetragonal, and pseudocubic structures at room temperature. Crystal symmetry was changed from 4-fold symmetry to 3-fold symmetry by substituting Pb(Co1/3, Nb2/3)O3 ; PCN, to Pb(Zr0.52, Ti0.48)O3 ; PZT. As the substituted PCN concentration was increased, an increase in a-axis direction and a decrease in c-axis in the perovskite structure were occurred simultaneously, so that the crystal symmetry was changed into such way. In the higher sinteringtemperatures, the unit cell distortions occurred rather in the lower substitution range of PCN. The ferroelectric properties were maximized at the region that tetragonal and rhombohedral or pseudocubic structures were coexist.

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Raman spectroscopy of PLZT thin films prepared by Sol-Gel processing (Sol-Gel법으로 제작된 PLZT박막의 Raman 연구)

  • 방선웅;장낙원;박정흠;마석범;박창엽;최형욱
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.52-55
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    • 1997
  • In this study, PLZT stock solutions were prepared by sol-gel processing to fabricate PLZT thin films. The stock solutions were spin-coated on ITO-glass and the film were annealed by rapid thermal annealing(RTA). The variation of tile crystallographic structure of the thin films and the phase transition with respect to it were observed using Raman spectra. Raman result showed that the band of spectra are broad as the amount of Zr substitution increased and specially, abrupt change occurs in the raman spectra upon crossing the tetragonal-rhombohedral phase boundry at 2/55/45 PLZT thin film. So, the fact that the crystallographic structure was transitted from tetragonal to rhombohedral structure was certified.

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Synthesis of $La_{1-x}Sr_xCoO_3$ (x≤0.2) at Low Temperature from PVA-polymeric Gel Precursors

  • 권호진;박동곤;국승태;박휴범;김건
    • Bulletin of the Korean Chemical Society
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    • v.18 no.12
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    • pp.1249-1256
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    • 1997
  • Single phase La1-xSrxCoO3 (x≤0.2) was synthesized as a uniform sized 100 nm particulates with relatively high surface area of 20-30 m2/g, at low temperature (≥600 ℃), from a polymeric gel precursors prepared by using poly(vinyl alcohol) as homogenizer. No minor phase developed during the crystallization when polymer/metal mole ratio was higher than 3. As the polymer/metal mole ratio was raised in the gel, the amount of carbonaceous residues in the amorphous solid precursor prepared by heating the gel at 300 ℃ increased. Most of the residues were eliminated by exothermic thermal decomposition around 400 ℃. The amount of residual carbon (less than 1%) left in the crystalline La1-xSrxCoO3 decreased as more polymer was used, eliminating detrimental effect which might be posed by using large amount of organic homogenizer. The crystal structure of La1-xSrxCoO3 synthesized at temperature lower than 800 ℃ was observed to be shifted from rhombohedral to more symmetric cubic. The structure shifted back to rhombohedral as the cubic sample was annealed at 1000 ℃.

α-Pinene Sensing Properties of Rhombohedral In2O3 Nanoparticles Prepared using the Microwave-assisted Hydrothermal Method (마이크로파 보조 수열 합성법으로 제조한 Rhombohedral In2O3 나노입자의 α-pinene 감지 특성)

  • Byeong-Hun, Yu;Hyo Jung, Lee;Joo Ho, Hwang;Ji-Wook, Yoon
    • Journal of Sensor Science and Technology
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    • v.31 no.6
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    • pp.418-422
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    • 2022
  • α-pinene is a natural volatile organic compound secreted by coniferous trees to protect themselves from attacks by insects, microorganisms, and viruses. Recently, studies have reported that α-pinene possesses pharmacological effects on various biological reactions such as anxiolytic, sleep-enhancing, anti-nociceptive, and inflammatory activity. Thus, forest bathing has recently received great attention as a novel therapy for treating severe diseases as well as psychological issues. However, appropriate places and timings for effective therapies are still veiled, because on-site monitoring of α-pinene gas in forests is barely possible. Although portable chemosensors could allow real-time analysis of α-pinene gas in forests, the α-pinene sensing properties of chemosensors have never been reported thus far. Herein, we report for the first time, the α-pinene sensing properties of an oxide semiconductor gas sensor based on rhombohedral In2O3 (h-In2O3) nanoparticles prepared by a microwave-assisted hydrothermal reaction. The h-In2O3 nanoparticle sensor showed a high response to α-pinene gas at ppm levels, even under humid conditions (for example, relative humidity of 50 %). The purpose of this research is to identify the potential of oxide semiconductor gas sensors for implementing portable devices that can detect α-pinene gas in forests in real-time.

Effect of Temperature and Compressive Stress on the Dielectric and Piezoelectric Properties of PIN-PMN-PT Single Crystal (온도 및 압축응력 변화에 따른 PIN-PMN-PT 단결정의 유전 및 압전 특성)

  • Lim, Jae Gwang;Park, Jae Hwan;Lee, Jeongho;Lee, Sang Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.63-68
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    • 2019
  • Dielectric and piezoelectric properties of PIN-PMN-PT piezoelectric single crystals with variation of temperature and compressive stress were investigated. The crystal phase of the single crystal was changed from the ferroelectric rhombohedral structure to tetragonal structure in the 110℃ region and from the tetragonal structure to the paraelectric cubic structure in the 190℃ region. The piezoelectric constant and relative dielectric constant were calculated from the rate of change of polarization and displacement with the application of electric field, which was similar to the value measured from the instrument. As the compressive stress applied to the sample increased, the piezoelectric constant d33 and relative dielectric constant values tended to increase. When the compressive stress applied to the sample at 5℃ was 60 MPa, the d33 was calculated as 4,500 pC/N. At 60℃, the relative dielectric constant of 62000 was calculated when the compressive stress applied to the sample was 40 MPa. The increase in piezoelectric constant and relative dielectric constant when the compressive stress increased could be attributed to the phase transition from the rhombohedral structure to orthorhombic.

Development of PLZTN for Shear Type Accelerometer (전단형 가속도센서에 사용되는 PLZTN 재료 개발)

  • 윤만순;임종인;김선욱;장세주
    • Journal of the Korean Ceramic Society
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    • v.29 no.1
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    • pp.53-59
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    • 1992
  • Piezolectric ceramics of Pb(Zr, Ti)O3 system were fabricated and used for shear type accelerometer. Among compositions studied, La+3 and Nb+5 doped composition showed the highest d15, and K15 and the morphotropic phase boundary (M.P.B) was shifted toward rhombohedral site.

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Structure and Electric Properties of PZT Ceramics Substituted by La and Nd (La와 Nd가 치환된 PZT 세라믹의 구조 및 전기적 성질)

  • Jung, Soo-Cheol;Park, Hyu-Bum;Kim, Jeong;Kim, Keon;Kim, Si-Joong
    • Journal of the Korean Ceramic Society
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    • v.31 no.2
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    • pp.155-160
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    • 1994
  • PZT ceramics substituted by La3+ and Nd3+ were fabricated according to the formula: [Pb1-x(La or Nd)x][Zr0.58Ti0.42]1-x/4$\square$x/4O3(x=0.00, 0.02, 0.05, 0.08, 0.15, 0.20). The crystal structure and microstructure were investigated by XRD and SEM. It was observed that the phase transitions among rhombohedral, tetragonal, and cubic symmetry occured as the substitutional quantity increased. Dielectric constant, dissipation factor and piezoelectric coefficient (d33), of each sample were measured. The dielectric properties were changed as the substitutional quanity of rare earth ion increased. These changes could be explained by crystal structure and compositional fluctuaction. Its d33 was higher at tetragonal region near to phase boundry between rhombohedral and tetragonal, which was explained by reorientation of domain wall.

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