• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.43-46
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• 2015

$Si(100){\backslash}200nm$ $SiO_2{\backslash}5nm$ $Ta{\backslash}5nm$ $MgO{\backslash}35nm$ $Fe_3O_4$ multi-layers were prepared by using RF-sputtering and ultra-high vacuum molecular beam epitaxy (UHV-MBE) techniques. After post-annealing the multi-layers at $500^{\circ}C$ for 1 hour under the high vacuum of ${\sim}1{\times}10^{-6}Torr$, we observed ferromagnetic properties at room temperature as well as the Verwey transition which is the typical features of magnetite crystals formed. We have carried out a comparative study of the effect of Ta buffered layer on the crystallinity and magnetic properties of $Fe_3O_4$ thin films prepared under different growth and annealing conditions.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.114-115
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 1993.03a
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• pp.20-21
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• 1993

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.261-269
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• 1998

Induced anisotropy with the energy of $6{\times}10^4\; J/m^3$ is obtained in amorphous Sm-Fe based thin films which are fabricated by rf magnetron sputtering under a magnetic field of 500~600 Oe. Compared with conventional thin films, the anisotropic thin films exhibit a similar "saturation" magnetostriction, but show a very large anisotropy in magnetorstiction which is of significant practical importance due to increased strain at a particular direction. It is shown from a systematic investigation over a wide composition range for binary Sm-Fe alloys that anisotropy is also induced, though small, during a normal sputtering procedure due to the stray field, and the largest anisotropy is observed in the composition range of 25~30 at.% Sm. Furthermore, induced anisotropy is also found to be formed by magnetic annealing, but the anisotropy energy is much smaller than that by magnetic sputtering. This may be because the volume diffusion by which atoms move during magnetic annealing to from induced anisotropy is much slower than the surface diffusion which is expected to be a dominant factor during magnetic sputtering.puttering.

• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.251-256
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• 1992

Artificial superlattices of Co/Pd were prepared by RF magnetron sputtering Multilayered structure and compositional modulation were analyzed with a side angle x-ray diffractometer. It has been found that expansion of Co lattice occured in this artificial superlattice due to the lattice mismatch between Co and Pd. Perpendicular magnetic anisotropy could be observed when the Co layer thickness became less than 8${\AA}$ and maximum coercivity of 2350 Oe could be obtained in [Co(2.5 ${\AA}$)/Pd(9.3 ${\AA})]_{50}$/Pd$(200\;{\AA})$ with a perfect squareness of magnetic hysteresis loop. Characteristic of perpendicular magnetic anisotropy in Co/Pd superlattices could be related to the expansion of Co lattice caused by Pd layer and it turned out that as the thickness of Pd layer increased, perpendicular magnetic anisotropy increased. The interface anisotropy energy and volume anisotropy energy were calculated to be 0.29 ergs/$cm^2$ and -$6.9{\times}10^6$ ergs/$cm^3$ respectively, which are consistent with the values reported elsewhere.

• Journal of the Korean Magnetics Society
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• v.6 no.5
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• pp.317-322
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• 1996

Thin films of Fe-Zr-N were fabricated by rf magnetron reactive sputtering method. The saturation magnetization and coercivity as functions of annealing temperature and partial pressure of nitrogen gas, effective permeability at high frequencies, and thermal stability were investigated. Magnetic softness was exhibited in the composition range of $Fe_{72-78}Zr_{7-10}N_{15-18}$ which was boundary between polycrystalline and amorphous structure. These films exhibited magnetic softness with saturation magentic flux density of 1.55 T and effective permeability of about 3000 at 1 MHz. These films also exhibited thermal stability by sustaining effective permeability of 2500 or above as the temperature was raised to $550^{\circ}C$. It is asswned that good magnetic softness is obtained because grain growth of $\alpha-Fe$ is prohibited due to the precipitation of ZrN nanocrystals. The grain sizes of $\alpha-Fe$ films were $40~50\AA$ and the grain sizes of ZrN nanocrystals were $10~15\AA$.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.831-836
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• 1999

Magnetic properties of (Fe(sub)1-xCo(sub)x)(sub)89Zr11 amorphous films fabricated by RF sputtering method have been investigated as a function of Co content x. By means of two step field annealing at 190~20$0^{\circ}C$ for 10 minutes in the magnetic field of 130 Oe, the film with x=0.4 among the samples shows the superior soft magnetic properties in spite of showing the high magnetostriction. For example, the obtained properties of coercivity and differential permeability measured in an exciting field of 10 mOe at the frequency of 8.7 MHz are 0.25 Oe and 280, respectively. It is confirmed that such behavior is due to the variation of magnetic anisotropies caused by a optimal compressive stress within the film.

• Journal of Magnetics
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• v.2 no.1
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• pp.22-24
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• 1997

FeN thin films were deposited by RF-reactive diode sputtering to investigate magnetic characteristics variation due to substrate tilt during the film deposition, and their magnetic properties were measured by VSM, SEM and AFM. When the substrate tilt pivot edges were parallel to the applied field, the magnetic anisotropy was increased When the substrate tilt pivot edges were perpendicular to the applied field, the easy magnetization axis became the hard magnetization axis, and the hard axis became the easy axis as the tilt angles were increased. The reason is believed to be due to the fact that the tilt induced shape magnetic anisotropy became larger than the field induced magnetic anisotropy by DC magnetic field as the crystal grains are enlongated along the substrate tilt pivot edges due to "oblique incidence anisotropy" commonly found in eveporated thin films.

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.42-47
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• 1995

FeN thin films for inductive recording heads were sputter deposited using RF diode sputtering mehtod from a pure iron target onto 7059 glass substrates, and their magnetic properties were measured. The magnetic properties were greatly affected by film thickness, gas pressure, sputter power and flow ratio of $N_{2}$ to Ar. Single layer FeN films with their thickness varied from $1,000\;{\AA}$ to $6,000\;{\AA}$ were doposited. 800 W sputter power, 3 mT gas pressure, $N_{2}$ to Ar flow ratio of 6.6 : 100 were the sputtering conditions. Up to 7 layers of FeN films having total thickness of $6,000\;{\AA}$ were deposited using $SiO_{2}$ of $30\;{\AA}$ thickness as intermediate layers and their coercivity and saturation magnetization were measured. The sputtering conditions were the same as those in the single layer films. Easy axis coercivity of the single layer FeN films gradually decreased as their thickness was increased, but for the films with their thicknesses above $3,000\;{\AA}$, the coercivity changed very little. As the number of the FeN layers were increased, the coercivity decreased We estimated the grain size of FeN films from the FWHM (Full Width at Half Maximum) of X-ray diffraction peaks. The grain size steadily decreased from about $200\;{\AA}$ to $120\;{\AA}$ as the number of layers were increased. Minimum hard axis coercivity of 0.4 Oe was obtained when the number of layers was four. Maximum relative permeability was 2,900 when the number of layers was three. The cut off frequeocy of the multilayer films were above 100 MHz.