• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.47-53
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• 2007

Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.44-48
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• 1999

In order to the investigate for the DC(forward-reverse) breakdown properties of gate oxide in MOSFET, we are manufactured the specimen as following. The resistivity is 1.2($\Omega$ $.$ cm), 1.5($\Omega$ $.$ cm) and 1.8($\Omega$ $.$ cm) when thickness is 600(${\AA}$), and the diffusion time is both 110[min] and 150[min] when thickness is 600[${\AA}$]. In DC dielectric strength due to the each resistivity, it is confirmed that almost of the leakage current and breakdown current is flowed through n+ source when positive bias is applied, but is flowed through P region when negative bias is applied. It is thought that the dielectric strength due to the diffusion time is the contribution as increasing of p region.

• Journal of Power Electronics
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• 제14권4호
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• pp.621-631
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• 2014

To invigorate the tapped-inductor boost (TIB) topology in emerging high step-up applications for off-grid products, a lossless snubber consisting of two capacitors and three diodes is proposed. Since the switch voltage stress is minimized in the proposed circuit, it is allowed to use a device with a lower cost, higher efficiency, and higher availability. Moreover, since the leakage inductance is fully utilized, no effort to minimize it is required. This allows for a highly productive and cost-effective design of the tapped-inductor. The proposed circuit also shows a high step-up ratio and provides relaxation of the switching loss and diode reverse-recovery. In this paper, the operation is analyzed in detail, the steady-state equation is derived, and the design considerations are discussed. Some experimental results are provided to confirm the validity of the proposed circuit.

• 대한전자공학회논문지SD
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• 제38권10호
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• pp.678-686
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• 2001

CaAs metal semiconductor field effect transistor (MESFET) 소자의 전달컨덕턴스 분산 (transconductance dispersion) 현상과 게이트 누설 전류의 원인을 capacitance deep level transient spectroscopy (DLTS) 측정을 이용하여 해석하였다. DLTS 스펙트럼에서는 활성화 에너지가 각각 0.65×0.07 eV와 0.88 × 0.04 eV인 두개의 표면 결함과 0.84 × 0.01 eV의 활성화 에너지를 갖는 EL2를 관찰하였다. 전달컨덕턴스 분산 측정 결과, 전달컨덕턴스는 5.5 Hz ∼ 300 Hz의 주파수 영역에서 감소하였다. 전달컨덕턴스 분산을 온도의 함수로 측정한 결과, 온도가 증가할수록 전이 주파수는 증가하였고 전이 주파수의 온도 의존성으로부터 0.66 ∼ 0.02 eV의 활성화 에너지를 구할 수 있었다. 게이트 누설 전류 측정에서는 0.15 V 이하의 게이트 전압에서 순 방향과 역 방향 게이트 전압이 일치하는 오믹 전류-전압 특성을 나타내었고 게이트 누설 전류의 온도 의존성으로부터 구한 활성화 에너지는 0.63 ∼ 0.01 eV로 계산되었다. 서로 다른 방법으로 구한 활성화 에너지의 비교로부터 표면 결함 H1이 주파수에 따라서 감소하는 전달컨덕턴스 분산 및 게이트 누설 전류의 원인임을 알 수 있었다.

• Journal of Power Electronics
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• 제16권3호
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• Journal of Power Electronics
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• 제19권6호
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• pp.1413-1428
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• 2019

In this paper, a novel zero-voltage and zero-current switching (ZVZCS) interleaved two switch forward converter is proposed. By using a coupled-inductor-type smoothing filter, a snubber capacitor, the parallel capacitance of the leading switches and the transformer parasitic inductance, the proposed converter can realize soft-switching for the main power switches. This converter can effectively reduce the primary circulating current loss by using the coupled inductor and the snubber capacitor. Furthermore, this converter can reduce the reverse recovery loss, parasitic ringing and transient voltage stress in the secondary rectifier diodes caused by the leakage inductors of the transformer and the coupled inductance. The operation principle and steady state characteristics of the converter are analyzed according to the equivalent circuits in different operation modes. The practical effectiveness of the proposed converter was is illustrated by simulation and experimental results via a 500W, 100 kHz prototype using the power MOSFET.

• 한국항행학회논문지
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• 제16권2호
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• pp.360-366
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• 2012

공항과 같은 산업 설비에 사용되는 분전반에서는 주 개폐기로 배선용 차단기가 사용이 되고 있으며, 분기 개폐기는 누전 차단기가 사용되어 인체 보호 및 누전 화재 보호 기능을 수행하고 있을 뿐만 아니라, 과전류 보호, 단락 보호 겸용 기능을 포함하여 사용되어 지고 있다. 특히 공항용 분전반의 경우 사용자의 급증과 함께 급속한 첨단화와 기기의 대용량화, 다양화, 전원용량의 증대 등으로 공항의 안정적인 전원 공급을 위하여 사고에 대한 보호 증대가 필요하게 되었고, 분기 누전 차단기의 다량 사용에 의한 2열 배열의 접속 방법 등으로 분전반을 제작하여 설치 면적에 대한 이슈가 부각되어 차단기의 슬림화가 주요한 문제로 자리 잡고 있다. 본 논문에서는 이를 위하여 아크 소호 기구부의 설계, 접점이 운동 방향 변경을 고려하여 기구부를 설계하고, 누전 검출 회로의 소형화 및 역 접속 시에도 안적적인 동작이 가능하도록 설계하였으며, 이를 검증하기 위하여 단락 시험을 실시함으로써 성능 검증을 하였고, 사고 전류에 대한 보호 기능의 강화와, 차단기의 슬림화, 역접속시에서 누전 동작이 가능한 차단기를 개발함으로써 급속히 커져가는 공항용 분전반에서 발생하는 공간 사용의 문제점을 해결하는데 도움을 주고자 한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.96-99
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• 2005

As the demand of internet networks using backbone communication systems recently increased, the researches on the high-speed wideband optical communication systems are required. For high-speed optical communication systems, asymmetric sampled grating distributed feedback laser diodes (DFB-LDs) are developed and the reliability of DFB-LDs is examined. The reliability of DFB-LDs is performed by monitoring I-V and L-I characteristics and two degradation phenomena related to the electrical characteristics of LDs are observed during the life tests. The first degradation phenomenon by increasing the reverse current is considered as a formation of leakage current path enough to prevent lasing operation in lateral blocking layer near active region of lasers. The second degradation phenomenon by decreasing the forward current is considered as activation of non-radiative Auger recombination process by thermal energy and the second degradation phenomenon is recovered after the off-test period at room temperature Eventually, evaluating the reliability of DFB LDs can allow us to improved the manufacturability in high-volume manufacturing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1910-1912
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• 1999

This paper was described electrical characteristics of Metal/GaN contact for application of GaN thin films. The lowest contact resistivity was $1.7\times10^{-7}[\Omega-cm^2]$ at Ti/Al Structure. Mean while, GaN MESFETs have been fabricated with a 250 nm thick channel on a high resistivity GaN layer grown by GAIVBE system. For a gate-source diode reverse bias of 35 V, the gate leakage current was $120{\mu}A$. From the data, we estimate the transconductance for our GaN MESFET to be 25 mS/mm.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.22.2-22.2
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• 2011

Reliability and degradation mechanism of conventional phosphor-converted white GaN-based light-emitting diodes (LEDs) were investigated. Under electro-thermal stress condition, the optical output degraded rapidly at the initial stress time accompanied by the change of chromatic properties. This could be attributed to the optical degradation of packaged materials, in particular, the browning of encapsulants and the darkening of reflective packages. At longer stress times, the optical output gradually decreased according to the degree of the reverse leakage currents, namely, the generation ofnonradiative recombination defects. This indicates that the optical degradation of white LEDs are dominated by the darkening of packaged materials and the generation of defects depending on the injection current and ambient temperatures. Using analyses of electroluminescence spectra, optical microscopy, electrical, optical, and thermal properties, optical degradations of white LEDs are discussed.