• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1131-1134
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• 2003

Unknown parameters of a nonlinear system were estimated using a signal compression method. The estimated parameters were natural frequency and tile damping coefficient. This study applied a algorithm using tile comparison of the cross-correlation coefficient between the impulse response from a model and it from the signal compression method. The impulse through linear element included in a nonlinear system could be obtained by the signal compression method. The unknown parameters of the linear element could be estimated by comparing the Bode plots of system's impulse response with them of model's response. In this study, a LSCM(LabVIEW-Signal-Compression-Method) was developed to identify a nonlinear system. The LSCM consisted of National Instrument's (NI) Data Acquisition (DAQ) Board (Model PCI-1200), a monitoring program using LabVIEW software package, DAQ Signal Accessory Board, and 2nd-order electric circuits. The designed electric circuits consisted of resistors, inductors and capacitors. To evaluate the performance of the LSCM, the response from model with known parameters is compared with the response from the real system using the monitoring program. The results from simulation of experiment showed that the developed LSCM provided a reliable estimation performance.

• Journal of the Microelectronics and Packaging Society
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• v.1 no.2
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• pp.125-134
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• 1994

저항범위가 다른 두종류의 Ru계 후막저항계(1Kohm/sq. 100kohm/sq.)를 선택하여 도전상의 상전이 기구를 반응조건을 변화시켜 연구하였다. 저저항체의 경우 도전상으로는 RuO2였으며 700-100$0^{\circ}C$에서 1시간 반응한 경우 반응온도에 따른 구성상의 변화는 없었다 반응온도 90$0^{\circ}C$에서 반응시간이 경과함에 따라 도전상은 RuO2가 Glass의 구성성분인 Pb와 반응하여 Rb2(Ru1.69 Pb0.31)O6.5로 변하고 시간이 36시간 경과한 후에는 도전상이 Pb4Al2Si2O10인 결정으로 둘러 쌓이는 반응인 peritectic reaction이 일어났다. 고전항체의 경 우 도전상으로는 Pb2(Ru1.69 Pb0.31)O6.5로 변하고 시간이 36시간 경과한 후에는 더전상이 Pb4Al2Si2O10인 결정으로 둘러쌓이는 반응인 peritectic reaction 이 일어났다. 고저항체의 경 우 도전상으로는 Pb2(Ru1.69 Pb0.31)O6.5인 pyrochrole 상이였다. 100$0^{\circ}C$에서 1시간 반응시킬 경 우 도전상이 RuO2로 변하였다. 반응온도를 90$0^{\circ}C$로 하고 반응시간을 변화시키면 도전상인 Pb2(Ru1.69 Pb0.31)O6.5가 (Ru1.69Pb0.31)O4x로 변하면서 공존하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.3
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• pp.9-16
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• 1972

In this article it is shown that a GIC circuit with conversion "s" can be realized and a inductor is realized as a RC active two terminal network by using it instead of a gyrator. It is also shown that arbitary stable transfer functions can be realized as the open-circuit voltage ratio of 2 port networks which include GIC;s. In relizing the GIC circuit using transistors, it is made clear that the nullatornorator model of atransistor can be successfully applied at least in the frequency range below 10kHz. The synthesis method using GIC's is characterized with the followings; First, arbitrary stable transfer functions are realized systematically by repeating very simple network structure. Second, in the overall network all circuit elements except GICs are only resistors. Third, the number of condensers in the overall network necessary for realizing the transfer function of n-th order are n, which is believed to be the least number expected. expected.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.4
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• pp.1-6
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• 2005

Recently embedded passive technology which fabricate passive elements such as resistors and capacitors at the inner layer of PCB(Printed Circuit Board) is used to make high performance IT products. However, embedded capacitor has limit in full range circuit applications because of the low capacitance density. In this paper, a new embedded capacitor which has wrinkled electrodes and dielectric layer was proposed to overcome the limits. FEM(Finite Elements Method) technique was used to evaluate capacitance density of the wrinkled type embedded capacitor. Capacitance density of the wrinkled type embedded capacitor is larger than that of conventional planar type embedded capacitor by about 25.6%$\sim$39.6%. In case of thin film type embedded capacitor, proposed wrinkled structure has more enhanced effect on the capacitance density.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.50-54
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• 1983

Contact resistance variation which may be called sliding noise in carbon film variable resistors whose resistance elements consists of linear resistivity distribution were measured with several kinds of sliders and were analyzed to reduce the contact resistance variation. About the measuring method, the standard method of measuring contact resistance variation specified by the variable Resistance Components Institute was adupted. By analyzing the experimental results, it has been shown that the primary cause of contact resistance variation is due to current constriction and small discharge sparks in the resistance film in the area close to the slide contact. Moreover, it has been found that the sliding noise would be reduced by increasing the number of contact points, sliding speed, and pressure, and by using some kinds of insulation oil on the contacting surface. High contact resistance variation is likely to occur in the area of high resistance variation in a logrithmic resistance taper.

• Journal of the Korean Institute of Intelligent Systems
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• v.26 no.5
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• pp.368-374
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• 2016

This paper presents an experimental study on an electrical circuit model of the TiO2-based nano-wired memristor device for neuromophic applications. The electrical circuit equivalent model of the proposed memristor device consists of several electronics components and some passive devices including operational amplifiers, multipliers, resistors and capacitors. In order to verify the proposed design, both of simulation (using PSPICE) as well as hardware implementation were performed for the analysis of the memristor circuit with time waveforms, frequency spectra, I-V curves and power curves. The gained results from the measured data showed a good agreement with the simulation result that confirm the proposed idea.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.10
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• pp.2678-2689
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• 1995

In this study, a new hot-wire anemometer which has greater sensitivity than that of a constant temperature anemometer (CTA) was proposed. In contrast to CTA, the wire working resistance of the new anemometer increases with flow velocity, that is, the operating mode of the wire becomes variable temperature. The variable temperature anemometer(VTA) was made by substituting a voltage controlled variable resistor such as photoconductive cell or transistor for one of the resistors in the bridge. By positively feeding back the bridge top signal to the input side of these electronic components, the wire overheat ratio could be increased with velocity automatically. Static response analyses of the VTA, constant voltage anemometer (CVA) and CTA were made in detail and calibration experiments were performed to validate the proposed operating principle. The wire operating resistance of the CVA decreases with velocity and this leads to lower sensitivity than that of a CTA. But the sensitivity of the newly proposed VTA is superior to that of a CTA, since the wire overheat ratio increases with velocity. Consequently, it is found that the major factor that is responsible for large sensitivity of a VTA is not the working resistance itself but the change of the wire working resistance with velocity.

• Journal of Sensor Science and Technology
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• v.26 no.5
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• pp.342-347
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• 2017

We present a precision instrument amplifier (IA) designed for bio-potential acquisition. The proposed IA employs a capacitively coupled instrument amplifier (CCIA) structure to achieve a rail-to-rail input common-mode range and low gain error. A positive feedback loop is applied to boost the input impedance. Also, DC servo loop (DSL) with pseudo resistors is adopted to suppress electrode offset for bio-potential sensing. The proposed amplifier was designed in a $0.18{\mu}m$ CMOS technology with 1.8V supply voltage. Simulation results show the integrated noise of $1.276{\mu}Vrms$ in a frequency range from 0.01 Hz to 1 KHz, 65dB SNR, 118dB CMRR, and $58M{\Omega}$ input impedance respectively. The total current of IA is $38{\mu}A$. It occupies $740{\mu}m$ by $1300{\mu}m$ including the passive on-chip low pass filter.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.2
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• pp.184-191
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• 1993

Continuous-time integrated filters, implemented in MOS VLSI technology, have been receiving considerable attention. In this paper, a continuous-time fifth order elliptic low-pass MOSFET-C filter has been designed with a cutoff frequency 3,400Hz. First an active RC filter is designed using cascade method which each block can be tunable. And then the resistors of an active RC network are replaced by a linear resistor using NMOS depletion transistors operated in the triode region. This continuous-time MOSFET filter have simpler structure than switched-capacitor filter, so reduce the chip area. The designed MOSFET-C filter characteristics are simulated by PSPICE program.