• 전기의세계
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• v.21 no.2
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• pp.25-33
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• 1972

The main focus of this paper is on the study of voltage-current characteristics in disk-type siliconcarbide resistors. For each of the 15 different sintering and other process conditions, 10 samples were prepared. Experiments performed with each sample consist of supplying sinusoidal AC current of a few miliamperes after conditioning-shots with 400ma. Experimental data were examined with regard to the relationship between the process conditions and the nonlinear resistivity. The examination suggests several possibilities of improving the nonlinlinear characteristics of siliconcarbide resistors while maintaining low resitance. One of those possible conditions is to sinter the powdered SiC and the binding materials approximately 2 hours in nitrogen. In addition to describing the nonlinear characteristics of siliconcarbide resistors, this paper also presents the distortion characteristics of current waves vs. the nonlinear exponent, n. Photographical results show that the more nonlinear characteristics samples have, the more distorted current waves are.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.926-932
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• 2007

A recently developed methods for on-site calibration of the current transformer (CT) comparator system have been reviewed in the paper. The method utilizes several traveling standards, which consist of the CT, non-reactive standard resistors, wide ratio error CT, and shunt resistors. The traveling CT is used for absolute evaluation of a standard CT belonging to industry. The non-reactive standard resistors and a wide ratio error CT are used for the linearity check of errors in the current comparator. The shunt resistors are used for evaluation of CT burden of industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.809-812
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• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.641-649
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• 2016

In this paper, a novel time-domain measurement technique on a high parallelism probe card with protection resistors installed is proposed. The measured signal amplitude decreases when the measurement is performed by Needle Auto Calibration (NAC) probing on a high parallelism probe card with installed resistors. Therefore, the original signals must be carefully reconstructed, and the compensation coefficient, which is related to the number of channel branches and the value of protection resistors, must be introduced. The accuracy of the reconstructed signals is analyzed based on the varying number of channel branches and various protection resistances. The results demonstrate that the proposed technique is appropriate for evaluating the overall signal performance of probe cards with Automatic Test Equipment (ATE), which enhances the efficiency of probe card performance test dramatically.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.4
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• pp.155-158
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• 1985

A simple active-R filter is proposed by utilizing only four resistors and two operational amplifiers. This filter has multi-functional characteristics and decreases the ratio of resistors. The sensitivity of $W_r$ and $Q_r$ as the parameter of filter is very low and the operating frequency of this active-R filter is possible in the high frequency. The integration of this active-R filter is easy due to the decrease in the number of resistors and the lowering of the ration of resistors. The experiment shows that all the characteristics of this active-R filter are in accordance with thory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.52-57
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• 2006

Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{\circ}C$ and 10.65 ppm/$^{\circ}C$ were measured at the annealing temperatures of $200^{\circ}C$ and $300^{\circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.56-62
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• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.5
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• pp.34-42
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• 1972

Current noise is an important indication of quality in deposited carbon film resistors. Imperfections in the resistive film create high current densities and consequently high current noise. The magnitude of current noise is depend upon many inherent properties of the resistor such as resistive material and others such as processing, fabrication and packing of resistive elements, etc. Performance tests have definitely established a correlation between current noise and electrical performance of carbon film resistors. To interprete the normal distribution of the current noise index for representative groups of resistors would serve as a powerful tool in judging the Quality control and product uniformity by the manufacturer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.