• Title/Summary/Keyword: Resistor

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Design of a Novel Instrumentation Amplifier using Current-conveyor(CCII) (전류-컨베이어(CCII)를 사용한 새로운 계측 증폭기 설계)

  • CHA, Hyeong-Woo;Jeong, Tae-Yun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.12
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    • pp.80-87
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    • 2013
  • A novel instrumentation amplifier(IA) using positive polarity current-conveyor(CCII+) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of two CCII+, three resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into two CCII+ used voltage and current follower converts into same currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the CCII+ and used commercial op-amp LF356. Simulation results show that voltage follower used CCII+ has offset voltage of 0.21mV at linear range of ${\pm}$4V. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the gain of 60dB was 400kHz. The IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 130mW at supply voltage of ${\pm}$5V.

A New Variable Degeneration Resistor for Digitally Programmable CMOS VGA (디지털 방식의 이득조절 기능을 갖는 CMOS VGA를 위한 새로운 가변 축퇴 저항)

  • Kwon, Duck-Ki;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.7 no.1 s.12
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    • pp.43-55
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    • 2003
  • A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome the problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. The proposed gain control scheme makes it easy to implement a low-voltage and high-speed VGA. This paper describes the problems existed in conventional methods, the principle and advantages of the proposed scheme, and their performance comparison in detail. A CMOS VGA cell is designed using the proposed degeneration resistor. The 3dB bandwidths are greater than 650㎒ and the gain errors are less than 0.3dB in a gain control range from -12dB to +12dB in 6dB steps. It consumes 3.1㎃ from a 2.5V supply voltage.

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마그네트론 스퍼터링에 의해 제조된 CrAlSiN 박막의 화학성분에 따른 온도저항계수와 미세구조

  • Mun, Seon-Cheol;Ha, Sang-Min;Kim, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.100-102
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    • 2013
  • Magnetron-sputtering법을 사용하여 기존에 연구하였던 CrAlN (Cr 7:Al 3)박막에 Si를 첨가하여 Si의 함량 변화에 따라 미세구조와 화학적 결합상태, 온도저항계수(TCR) 및 산화저항의 영향과 기계적특성 개선을 통한 multi-functional heater resistor layer로써의 가능성을 연구하였다. CrAlSiN 박막의 Si 함량에 변화에 따라 온도저항계수 변화를 확인하였으며 X-선 회절 분석(XRD) 패턴 분석결과 CrAlSiN 박막의 결정구조가 Bl-NaCl 구조를 가지고 있는 것을 확인하였으며 SEM과 AFM을 통한 표면 및 미세구조 분석결과 Si의 함량이 증가할수록 입자가 조밀해짐을 알 수 있었다. 최근 digital priting technology의 핵심 기술로 부각되고 있는 inkjet priting technology는 널리 태양전지뿐만 아니라 thin film process, lithography와 같은 반도체 공정 기술에 활용 할 수 있기 때문에 반도체 제조장비에도 사용되고 있으며, 현재 thermal inkjet 방식을 사용하고 있다. Inkjet printing technology는 전기 에너지를 잉크를 배출하기 위해 열에너지로 변환하는 thermal inkjet 방식을 사용하고 있는데, 이러한 thermal inkjet 방식은 기본적으로 전기저항이 필요하지만 electrical resistor layer는 잉크를 높은 온도에서 순간적으로 가열하기 때문에 부식이나 산화 등의 문제가 발생할 수 있어 이에 대한 보호층을 필요로 한다. 하지만, 고해상도, 고속 잉크젯 프린터, 대형 인쇄 등을 요구되고 있어 저 전력 중심의 잉크젯 프린터의 열효율을 방해하는 보호층 제거에 필요성이 제기되고 있다. 본 연구는 magnetron-sputtering을 사용하여 기존의 CrAlN 박막에 Si를 합성하여 anti-oxidation, corrosion resistance 그리고 low temperature coefficient of resistance 값을 갖는 multi-functional heater resistor layer로써 CrAlSiN 박막의 Si 함량에 따른 효과에 초점을 두었다. 본 실험은 CrAlN 박막에 Si 함량을 4~11 at%까지 첨가시켜 함량의 변화에 따른 특성변화를 확인하였다. 함량이 증가할수록 amorphous silicon nitride phase의 영향으로 박막의 roughness는 감소하였으며 XRD 분석결과 (111) peak의 Intensity가 감소함을 확인하였으며 SEM 관찰시 모든 박막이 columnar structure를 나타내었으며 Si함량이 증가할수록 입자가 치밀해짐을 보여주었다.Si함량이 증가할수록 CrAlN 박막에 비하여 면저항은 증가하였으며 TCR 측정결과 Si함량이 6.5 at%일 때 가장 안정한 TCR값을 나타내었다. Multi-functional heater resistor layer 역할을 하기 위해서, CrAlSiN 박막의 원소 분포, 표면 거칠기, 미세조직, 전기적 특성 등을 조사하였다. CrAlN 박막의 Si의 첨가는 크게 XRD 분석결과 주상 성장을 억제 할 수 있으며 SEM 분석을 통하여 Si 함량이 증가할수록 Si3N4 형성이 감소하며 입자크기가 작아짐을 확인하였다. 면저항의 경우 Si 함량이 증가함에 따라 높은 면저항을 나타내었으며 Si함량이 6.5 at%일 때 가장 낮은 TCR 값인 3120.53 ppm/K값을 보였다. 이 값은 상용되고 있는 heater resistor보다 높지만, CrAlSiN 박막이 더 우수한 기계적 특성을 가지고 있기 때문에 hybrid heater resistor로 적용할 수 있을 것으로 기대된다.

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A Design of Novel Instrumentation Amplifier Using a Fully-Differential Linear OTA (완전-차동 선형 OTA를 사용한 새로운 계측 증폭기 설계)

  • Cha, Hyeong-Woo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.1
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    • pp.59-67
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    • 2016
  • A novel instrumentation amplifier (IA) using fully-differential linear operational transconductance amplifier (FLOTA) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of a FLOTA, two resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into FLOTA converts into two same difference currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the FLOTA and realized the IA used commercial op-amp LF356. Simulation results show that the FLOTA has linearity error of 0.1% and offset current of 2.1uA at input dynamic range ${\pm}3.0V$. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the 60dB was 10MHz. The proposed IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 105mW at supply voltage of ${\pm}5V$.

A SPICE Modeling and Simulation of Electrodeless fluorescent lamp Endura (SPICE를 이용한 무전극 램프의 모델링 및 시뮬레이션)

  • 박석인;한수빈;정봉만;유승원;장우진
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2002.11a
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    • pp.19-21
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    • 2002
  • Electroded lamps operated at a high enough frequency can usually be modeled for the purpose of ballast design, as a resistor. Electrodeless fluorescent lamps include other components such as the arc tube's inductance. But that's impedance is small and so will be neglected in this paper. So, electrodeless fluorescent lamps is modeled as a resistor. A SPICE compatible model was developed for an electrodeless fluorescent lamp(OSRAM SYLVANIA ICETRON/ENDURA 150W).

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Chaos Synchronization using Chua Circuit (Chua 회로에서의 카오스 동기화)

  • 배영철
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.05a
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    • pp.247-254
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    • 2000
  • Chua's circuit is a simple electronic network which exhibits a variety of bifurcation and attractors. The circuit consists of two capacitors, an inductor, a linear resistor, and a nonlinear resistor. In this paper, a transmitter and a receiver using two identical Chua's circuits are proposed and a synchronizations methods are investigated. Since the synchronization of the transmission system or nonidea system are impossible by coupled synchronization, the drive-response synchronization theory were used.

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Inductance Calculation with OPERA program between Sections of MRI Magnet (OPERA를 이용한 MRI 마그네트의 권선간 인덕턴스 계산)

  • 배준한;심기덕;고락길;진홍범;권영길;류강식;이상진
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2000.02a
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    • pp.173-176
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    • 2000
  • MRI magnet has generally multi-section coil configurations to generate highly homogeneous magnetic field. Each coil is bridged by a shunt resistor to protect the superconducting magnet during quench. In order to optimize the shunt resistor, self inductance of each coil and mutual inductances between coils should be determined beforehand. Therefore, we calculated the self and the mutual inductances of MRI magnet with OPERA program for electromagnetic analysis.

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A Study on Multi-Phase Flashover in 765kV Transmission Line using EMTP (EMTP를 이용한 765kV 송전선로 다상 섬락에 관한 연구)

  • Ka, B.H.;Min, S.W.
    • Proceedings of the KIEE Conference
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    • 1998.07e
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    • pp.1586-1588
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    • 1998
  • To use the EMTP, in this paper, a arcing horn is simulated by non-linear resistor and inductor element using TACS, a tower by distributed parameter model, and lines as K. C. Lee model. Changing lightning current characteristics, lightning position, and tower footing resistor value, we analysis multi-phase flashover characteristics in 765 kV transmission line.

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