• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.67-67
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• 2010

PV module has many power loss factor in the site. Among them, one thing is series resistance. Especially interconnection ribbon resistance is one of the power loss. In this paper, we study interconnection ribbon resistance of the PV module material. In the field, high temperature can pile ribbon resistance on the PV modules. We can do better choice in the optimum use of ribbon through checking relation of ribbon dimension and resistivity. From this point of view, different solder type and dimension was treated.

• Nuclear Engineering and Technology
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• v.9 no.1
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• pp.7-13
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• 1977

This paper attempted to investigate the temperature characteristics and electrical conduction when low density polyethylene is irradiated. It was found that the log $\rho$ versus 1/T in irradiated polyethylene specimen resulted in different characteristics when it was heated upto above the melting point from when it was heated at the beginning stage. It was also found that the relation between the temperature and volume resistivity represented jumping phenomenon and that crystallization by thermal change was closely related to the fusion of crystalline region.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.639-642
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• 2001

전형적인 비저항-온도 특성을 갖는 BaTiO$_3$계 PTC 세라믹을 일반적인 세라믹 공정을 이용하여 제조하였고, 결정립계면에 형성된 전위장벽의 높이를 구하였다. ZnO 바리스터의 전위장벽을 구하기 위해 이용되었던 커패시턴스-전압 관계식과는 다른 새로운 관계식을 제안하였고, 기존의 비저항-온도 관계식을 다소 변경한 관계식을 이용하여 전위장벽을 구하였다. 두 관계식으로부터 구한 전위장벽의 높이는 매우 유사한 값을 보이고 있으며 타 연구자들에 의해 보고된 값과도 잘 일치하고 있다. 비저항-온도 관계식과 커패시턴스-전압 관계식을 이용하여 130-18$0^{\circ}C$ 구간에서 구한 전위장벽의 크기는 각각 0.41-0.76V와 0.36-0.80V이었다.

• Progress in Superconductivity
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• v.7 no.2
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• pp.103-108
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• 2006

We have measured the Hall resistivity (${\rho}_{xy}$) and the longitudinal resistivity (${\rho}_{xy}$) on superconducting $MgB_2$ thin films in extended fields up to 18 T. We found a universal scaling behavior between the Hall resistivity and the longitudinal resistivity, which is independent of the temperature and the magnetic field. At a wide magnetic field region from 1 to 18T, a universal power law of ${\beta}=2.0{\pm}0.1$ in a scaling relation, ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$, was observed in c-axis-oriented $MgB_2$ thin films. These results can be well interpreted by using recent models.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.5
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• pp.235-243
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• 2008

Ni-C composite films were prepared using a combination of microwave plasma CVD and ion beam sputtering deposition working in a codeposition way. The structure of these films was characterized by energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, $Ni_3C$ (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low $CH_4$ flow rates. The thermal stability of this nonequilibrium carbide $Ni_3C$ was also studied. As a result, the $Ni_3C$ carbide was found to decompose into nickel and graphite at around $400^{\circ}C$. With high $CH_4$ flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.5-8
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• 2013

We have studied Hall effect for potassium (K)-doped $BaFe_2As_2$ superconducting thin films by analyzing the relation between the longitudinal resistivity (${\rho}_{xx}$) and the Hall resistivity (${\rho}_{xy}$). The thin films used in this study were fabricated on $Al_2O_3$ (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ~$10^{-6}$ Torr. The samples showed the high superconducting transition temperatures ($T_c$) of ~ 40 K. The ${\rho}_{xx}$ and the ${\rho}_{xy}$ for K-doped $BaFe_2As_2$ thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of $100A/cm^2$ and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ${\rho}_{xx}$and the ${\rho}_{xy}$ to investigate Hall scaling behavior on the basis of the relation of ${\rho}_{xy}={A{\rho}_{xx}}^{\beta}$. The ${\beta}$ values are $3.0{\pm}0.2$ in the c-axis-oriented K-doped $BaFe_2As_2$ thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower ${\beta}$ than that of c-axis-oriented thin films. Interestingly, the ${\beta}$ value is decreased with increasing magnetic fields.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.258-260
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• 1993

Aluminum thin films were deposited on glass substrate using DC Magnetron Sputtering. Deposition rate, specular reflectance, and resistivity were investigated as a function of the input power, pressure, substrate temperature, and deposition time. Reflectance was reduced with increasing power, also with prolonging deposition time. Topography of the surface, which influences the properties such as electromigration, was observed from scanning electron microscope (SEM) and there was a close relation between the topography and measured reflectance.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.609-614
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• 1993

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.1319-1321
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• 2001

The purpose of this study is to manufacture and test a thermoelectric generator which converts unused energy from close-at-hand sources, such as garbage incineration heat and industrial exhaust, to electricity. A manufacturing process and the properties of a thermoelectric generator are discussed before simulation the thermal stress and thermal properties of a thermoelectric module located between an aluminum tube and alumina plate. We can design the thermoelectric modules having the good properties of thermoelectric generation. Resistivity of thermoelectric module for thermoelectric generation consisting of 62 cells was $0.15{\sim}0.4{\Omega}$. The maximum power of thermoelectric generator using thermoelectric generation modules can be defined as temperature function, and in this case. It can be analogized the lineal relation between current and voltage characteristics as function of temperature. The thermoelectric generator using 32 thermoelectric modules was assembled with 32 directly connected modules that they constrained for two kinds of heat transfer tube with key joints.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1614-1616
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• 2000

The purpose of this study is to manufacture and test a thermoelectric generator which converts unused energy from close-at-hand sources, such as garbage incineration heat and industrial exhaust, to electricity. A manufacturing process and the properties of a thermoelectric generator are discussed before simulating the thermal stress and thermal properties of a thermoelectric module located between an aluminum tube and alumina plate. We can design the thermoelectric modules having the good properties of thermoelectric generation. Resistivity of thermoelectric module for thermoelectric generation consisting of 62 cells was $0.15{\sim}0.4{\Omega}$. The maximum power of thermoelectric generator using thermoelectric generating modules can be defined as temperature function, and in this case it can be analogized the linear relation between current and voltage characteristics as function of temperature. The thermoelectric generator using 128 generating modules was assembled with 4 parallel connected modules sets composed with 32 directly connected modules.