• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.247-253
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• 2000

We evaluated the electric properties of Bi-2223 jointed tapes processed by both resistive-and superconducting-joint methods. For resistive-joint. filler materials of wood metal Pb/Sn. In and silver paste were used whereas for superconductive-joint lap joint method was used. In the resistive joint tape. critical transport property(CCR) n-value and contact resistance were observed to be in the range of 10-85% 1-8,9. and 0.71x10$\^$-6/-0.13x10$\^$-6/Ω, respectively. depending on their filler materials. Specifically it is believed that the electrical properties of resistive joint tape are significantly related to the resistivity of filler materials. On the other hand the CCR of superconductin joint type was varied 55 to 85% with uniaxial pressure probably due to the irregular microstructure in the transition region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.209-212
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• 1999

We studied the operating properties of resistive and inductive SFCLS with 100 $\Omega$ of quench impedance for a three-phase-fault in the 154 kV transmission system. The fault simulation at the phase angles 0$^{\circ}$ , 45$^{\circ}$ , and 90$^{\circ}$ showed that the resistive SFCL limited the fault current less than 16 kA without any DC component after one half cycle from the instant of the fault. On the other hand, the inductive SFCL suppressed the current below 11 kA, but with 3-4 kA of DC component which decreased to zero in 5 cycles. We concluded that the inductive SFCL had higher performance in current limiting but the resistive SFCL was better from the view point of DC components.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.298-303
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• 2000

We evaluated the electric properties of Bi-2223 jointed tapes processed by both resistive- and supercondcuting-joint methods. For the resistive-joint, filler materials of wood metal, Pb/Sn, In, and silver paste were used, whereas, for the superconductive-joint, the lap joint method were used. In the resistive-joint tape, it was observed that the electrical properties such as current transport property, n-value, and contact resistance of the tape were significantly related to the resistivity of filler materials. On the other hand, in the superconducting-joint tape, the current transport property was dependent on the uniaxial pressure. Specifically, the current transport property varied 50 to 80% with uniaxial pressure, probably due to the irregular microstructure in the transition region.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.32-43
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• 2023

Resistive Random Access Memory (RRAM), based on resistive switching characteristics, is emerging as a next-generation memory device capable of efficiently processing large amounts of data through its fast operation speed, simple device structure, and high-density implementation. Interface type resistive switching offer the advantage of low operation currents without the need for a forming process. Especially, for RRAM devices based on transition metal oxides, various studies are underway to enhance the memory characteristics, including precise material composition control and improving the reliability and stability of the device. In this paper, we introduce various methods, such as doping of heterogeneous elements, formation of multilayer films, chemical composition adjustment, and surface treatment to prevent degradation of interface type resistive switching properties and enhance the device characteristics. Through these approaches, we propose the feasibility of implementing high-efficient next-generation non-volatile memory devices based on improved resistive switching properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.05a
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• pp.212-213
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• 2014

In case of fire spray protection sheath, fire resisting capacity is assessed for each material and installation method according to fire-resistive construction recognition. This study reviews effects of the percentage of water content that exist in fire spray protection sheath during the assess process of fire resisting capacity on fire resisting capacity, and changes of the percentage of water content according to temperature conditions. As a result of exams, as curing temperature is higher and thickness of specimen is thinner, decrease of the percentage of water content becomes significant.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1286-1291
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• 2003

Quench behavior of resistive superconducting fault current limiters (SFCLS) with various pattern shapes was investigated. The pattern shapes employed were meander, bi-spiral, and spital shapes of identical line width, gap and margin. SFCLS were fabricated from YBCO thin films grown on two-inch diameter Al$_2$O$_3$ substrates under the same conditions. The total length of current limiting paths was the shortest at the spital shape due to its larger useless space. Inductance component of SFCLs with the spiral shape was around two times as high as those of other two shapes. This is not desirable since impedance characteristics of existing power systems can be changed. Resistance rise of current limiting elements was low at a spiral shape before the whole quench completion, which may act as a disadvantage for simultaneous quench in serial connection between current limiting elements, but the temperature tended to have similar values at higher voltages. On the other hand, hi-spital shape was severe at insulation level between current limiting lines. When these aspects were considered, we concluded that a meander shape was appropriate to design for a resistive SFCL based on thin films except the concentration of electric field at edge areas of strip lines.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.20-20
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• 2005