• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.73-78
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• 2004

In this paper, it is designed for 5.8GHz Wireless LAN sub harmonic resistive mixer. Sub harmonic resistive mixer is constituted by advantage of sub harmonic mixer and resistive mixer. Sub harmonic resistive mixers mix harmonics of LO with RF and obtain IF frequency. Therefore, it was possible to use decreasing LO frequency than conventional mixers. And, Sub harmonic resistive mixer has low IMD because of using unbiased channel resistance of GaAs FET. When LO power is 13dBm, the conversion loss of manufactured sub harmonic resistive mixer is 10.67 dB. And IIP3 of mixer is 21.5dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.8 s.111
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• pp.719-724
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• 2006

In this paper, we designed the double conversion down mixer by using Half-LO frequency in 2.3 GHz band. The IF frequency is obtained by supplying two LO frequencies to HEMT in both gate type and resistive type. The proposed mixer uses Half-LO frequency the same way as conventional sub-harmonic mixers. However the proposed one uses fundamental component of Half-LO frequency in first stage instead of using second harmonic components of Half-LO frequency, and the IF frequency is obtained by resistive type mixer in second stage, thereby the proposed mixer can improve linearity in comparison with conventional active mixer. We can verify that the proposed mixer has an conversion loss of 5dBm and IIP3 of 16.25dBm by using 10 dBm Power.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.8
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• pp.970-974
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• 2007

A mixer is a key component in the wireless communication systems. In this paper, we design a mixer which is used in a frequency modulated continuous wave(FMCW) radar system. The frequency sweep range of the radar is from 10 GHz to 11 GHz. The transmitted and received signals of the FMCW radar are applied to LO and RF ports of the mixer, respectively, but the frequency difference between the two signals, which is called "a beat frequency" is under a few KHz and depending on the distance to target. Thus the isolation between the LO and RF ports is very important factor to design this mixer. In this paper we propose a single balanced resistive mixer using GaAs MESFET for this application. We first design a single-ended type resistive mixer using a simulation tool, then design a balanced type to increase the LO-to-RF isolation of the mixer. We fabricated the mixer on the substrate of dielectric constant 10 and thickness 0.635 mm. The measured results show that the isolation and conversion loss of the mixer over the frequency band is 20dB and 10.5dB, respectively. The LO input power for operating the proposed mixer is +3dBm, which is lower than a general conventional mixer's LO power. The 1 dB compression point is 6dBm.

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.143-149
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• 2004

This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.61-68
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• 2005

In this paper, low conversion loss 94 GHz MIMIC resistive mixer was designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC's, was fabricated. The DC characteristics of MHEMT are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 189 GHz and the maximum oscillation frequency(fmax) is 334 GHz. A 94 GHz resistive mixer was fabricated using $0.1{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the 94 GHz resistive mixer was 8.2 dB at an LO power of 10 dBm. P1 dB(1 dB compression point) of input and output were 9 dBm and 0 dBm, respectively. LO-RF isolations of resistive mixer was obtained 15.6 dB at 94.03 GHz. We obtained in this study a lower conversion loss compared to some other resistive mixers in W-band frequencies.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.16-20
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• 2002

This paper describes the resistive FET mixer with low IF for the 4-Ch DBF(Digital Beam Forming) receiver with LNA(Low Noise Amplifier). This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 2.09 ㎓, 2.08 ㎓ and 10㎒, respectively. The RF input power, LO input power and Vgs are used -10㏈m, 6㏈m and -0.4 V, respectively. In the 4-Ch resistive FET mixer with LNA, the measured IF and harmonic components of 10㎒, 20㎒, 2.09㎓ and 4.17㎓ are about -12.5 ㏈m, -57㏈m, -40㏈m and -54㏈m, respectively. The IF output power observed at each channel of 10㎒ is about -12.5㏈m and it is higher 27.5 ㏈m than the maximum harmonic component of 2.09㎓. Each IF output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.921-924
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• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• ETRI Journal
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• v.33 no.5
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• pp.818-821
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• 2011

A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.117-123
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• 2002

This paper describes the design for the resistive FET mixer with low If for the 4-Ch DBF(Digital Beam Forming) receiver This DBF receiver based on the direct conversion method is generally suitable for high-speed wireless mobile communications. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(If) considered in this research are 2.09 GHz, 2.08 CHz and 10 MHz, respectively. This mixer is composed of band pass filter, a low pass filter and a DC bias circuit. Super low noise HJ FET of NE3210S01 is considered in design. The RE input power, LO input power and Vcs are used -10 dBm, 6 dBm and -0.4 V, respectively. In the 4-Ch resistive FET mixer, the measured If and harmonic components of 10 MHe, 20 MHz and 2.087 CHz are about -19.2 dBm, -66 dBm and -48 dBm, respectively The If output power observed at each channel of 10 MHz is about -19.2 dBm and it is higher 28.8 dBm than the maximum harmonic component of 2.087 CHz. Each If output spectrum of the 4-Ch is observed almost same value and it shows a good agreement with the prediction.