• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.218-222
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• 2002

Micro-EDM is generally used far machining micro holes, pockets, and 3-D structures. For micro-EDM, first of all, micro-electrode fabrication is needed and WEDC system is proposed for tool electrode fabrication method. When tool electrode is fabricated using WEDG system, its characteristics are under the control of many EDM parameters. Also relations between the parameters affect electrode fabrication. In this study, experiments are carried out to analyze effects of EDM parameters about electrode surface integrity on micro-electrode fabrication. Experimental method and analysis are used to experimental design method. Factors used in experiments are composed of capacitance, resistance, pause time, wire feed rate, spindle rotating speed. As a result of experiments, capacitance and resistance affect electrode surface.

• 전자공학회논문지A
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• 제28A권9호
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• pp.743-751
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• 1991

This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.487-490
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• 2000

The purpose of this study is to research and develop conducting polymer(CP) composite electrode for supercapacitor. Electrochemical capacitor(supercapacitor) cell of CP composite electrode with 1M LiClO$_4$PC bring out good capacitor performance below 4V. The radius of semicircle of CP composite cell with PAn composite electrode adding l5wt%SP270(PAnS15) and PT composite electrode adding 50wt%SP270 (PTS50) was absolutely small. The total resistance of supercapacitor cell mainly depended on internal resistance of the electrode. The discharge capacitance of supercapacitor cell with PTS50(+)/PAnS15(-) in 1st and 20th cycles was 38F/g and 28F/g at current density of 1mA/cm$^2$. Supercapacitor cell with PTS50(+)/PAnS15(-) showed good capacitance and stability with cycling.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.107-111
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• 2004

This work describes the effect of composite conductor on the characteristics of electric double layer capacitor. Test cell, which was fabricated with conducting composite consisted of 80％ of SPB and 20％ of VGCF, exhibits the better tate capability and the lower resistance than those of the cells fabricated with single electronic conductor. These enhanced properties could be related with the decrease of contact resistance between the activated carbon powders.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 추계학술발표대회 개요집
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• pp.55-57
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• 2005

In this study, modeling of the CD stud welding system was conducted considering mechanical and electrical components. The electrical components such as arc resistance, cable resistance, capacitance, internal resistance and cable inductance were found to affect the output waveform significantly. The calculated results showed food agreements with the experiment results within 20% error. The main defect of CD stud welding with 1010 steel stud and SS400 steel plate was the void trapped between stud and base metal. The effect of the spring force and stud tip size on void formation was investigated.

• Corrosion Science and Technology
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• 제20권6호
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• pp.492-492
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• 2021

• 공업화학
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• 제24권3호
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• pp.247-252
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• 2013

반응시간을 변화시키면서 poly(ether ether ketone) (PEEK)을 황산과 반응시켜 술폰화도가 다른 sulfonated PEEK (SPEEK)를 합성하였다. 제조한 SPEEK를 탄소전극 표면에 코팅하여 이온선택성 복합탄소전극(ion-selective composite carbon electrode, ISCCE)을 제조하였다. 임피던스 분석을 통해 제조한 ISCCE의 비정전용량과 전기저항을 측정하였다. 술폰화 반응 시간에 따라 SPEEK의 이온교환용량은 1.60~2.57 meq/g으로 측정되었다. 그러나 이온교환용량이 2.5 meq/g 이상에서는 SPEEK가 일부 물에 용해되어 ISCCE 제조에 부적합하였다. ISCCE에 대한 정전용량을 측정한 결과 코팅된 SPEEK의 이온교환용량이 증가함에 따라 정전용량도 증가하였으며 코팅하지 않은 탄소전극에 비해 최대 20%까지 향상되었다. 또한 코팅층의 전기저항은 SPEEK의 이온교환용량이 증가함에 따라 크게 감소하였다. 따라서 SPEEK가 코팅된 ISCCE를 이용하여 기존 축전식 탈염(capacitive deionization, CDI) 공정의 탈염효율을 크게 향상시킬 수 있을 것으로 기대된다.

• 한국전자파학회논문지
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• 제21권3호
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• pp.262-268
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• 2010

본 논문에서, 부성 저항 특성을 갖는 능동 커패시턴스 회로를 이용한 고출력 능동 가변 대역 통과 여파기는 동축형 유전체 공진기와 버랙터 다이오드를 사용하여 설계하였으며, 셀룰러 TX, RX 대역을 모두 가변할 수 있도록 설계하였다. 능동 커패시턴스 회로의 직렬 피드백 구조는 가변 대역 통과 여파기의 버랙터 다이오드로부터 생기는 손실을 보상함과 동시에 고출력 특성을 갖도록 하기 위해 $P_{1dB}$가 32 dBm인 GaAs HFET을 사용하였다. 버랙터 다이오드는 고선형 특성을 갖도록 하기 위해 back-to-back 구조를 사용하였다. 제작된 2단 능동 가변 대역 통과 여파기는 셀룰러 대역인 800 MHz에서 900 MHz를 가변하며, 각각 25 MHz 대역폭으로 TX 대역 836 MHz에서 0.48 dB 삽입 손실 특성을 나타냈으며, RX 대역 881.5 MHz에서 0.39 dB 삽입 손실 특성을 나타내었다. $P_{1dB}$특성은 TX 및 RX 대역에서 각각 19.5 dBm과 23 dBm을 얻었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 Ⅲ
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• pp.1549-1552
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• 2003

Semiconductor gas sensor using tin oxide as sensing material has been used to detect gases based on the fact that impedance of the sensing material varies when the gas sensor is exposed to the gases. This variation comprises of two parts. The first one is variation in resistance of the sensing material and the other is expressed in terms of the sensor capacitance variation. Normally, only variation of the sensor resistance is considered. In this paper, using AC measurement with a capacitor-coupled inverting amplifier circuit, both changes in the sensor resistance and variations in the sensor capacitance were investigated. These characteristics were represented as magnitude gain and phase shift of AC signal at a specific frequency after passing it through the sensor and the designed circuit. A two-stage artificial neural network, which utilized the information above, was employed to identify and quantify three combustible gases: methane, propane and butane. The network outputs were approximately proportional to concentrations of test gases with reasonable level of error.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.438-439
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• 2006

We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.