• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Journal of Powder Materials
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• v.28 no.6
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• pp.470-477
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• 2021

Energy storage systems should address issues such as power fluctuations and rapid charge-discharge; to meet this requirement, CoFe₂O₄ (CFO) spinel nanoparticles with a suitable electrical conductivity and various redox states are synthesized and used as electrode materials for supercapacitors. In particular, CFO electrodes combined with carbon nanofibers (CNFs) can provide long-term cycling stability by fabricating binder-free three-dimensional electrodes. In this study, CFO-decorated CNFs are prepared by electrospinning and a low-cost hydrothermal method. The effects of heat treatment, such as the activation of CNFs (ACNFs) and calcination of CFO-decorated CNFs (C-CFO/ACNFs), are investigated. The C-CFO/ACNF electrode exhibits a high specific capacitance of 142.9 F/g at a scan rate of 5 mV/s and superior rate capability of 77.6% capacitance retention at a high scan rate of 500 mV/s. This electrode also achieves the lowest charge transfer resistance of 0.0063 Ω and excellent cycling stability (93.5% retention after 5,000 cycles) because of the improved ion conductivity by pathway formation and structural stability. The results of our work are expected to open a new route for manufacturing hybrid capacitor electrodes containing the C-CFO/ACNF electrode that can be easily prepared with a low-cost and simple process with enhanced electrochemical performance.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• Journal of Korea Multimedia Society
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• v.20 no.10
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• pp.1678-1688
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• 2017

Infiltration is one of detrimental problems occurring in nursing or medical settings. Early detection of infiltration is essential to minimize the risk of injury from infiltration. To perform a preliminary study on the point of care and automated infiltration detection system, bioelectrical impedance was investigated using bioelectrical impedance analyzer. We would like to report experimental results that allow impedance parameters to effectively distinguish infiltration. Electrodes were attached to both sides of the transparent dressing on the fusion site where IV solution was being infused. Then, impedance parameters before and after infiltration were measured as a function of time and frequency. The experimental results are as follows. After infiltration was intentionally induced by puncturing the vein wall with a needle, the resistance gradually decreased with time. That is, when an alternating current having a frequency of 20 kHz was applied to the electrodes, the resistance gradually decreased with time, reflecting the accumulation of IV solution in the extracellular fluid since the current could not pass through the cell membrane. Impedance parameters and equivalent circuit model for human cell were used to examine the mechanism of current flow before and after infiltration, which could be used for early detection of infiltration.

• Journal of the Korean Electrochemical Society
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• v.11 no.1
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• pp.33-36
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• 2008

In the present study, impedance spectrometry has been used for predicting State-of-Charge (SoC) of gel type, Valve Regulated Lead Acid (VRLA), battery. The impedance measurements of VRLA battery (2V/1.2 Ah) at various SoC were made over the frequency range from 100kHz to 10mHz with an amplitude 10 mV. The impedance parameters have been evaluated by the analysis of the data using an equivalent circuit and a complex non-linear least squares (CNLS) fitting method. The charge transfer resistance values and double layer capacitance values of the positive electrode were higher than those of the negative electrode. The gel resistance values increased with decreasing in SoC. This indicates that the gel resistance is an important parameter for predicting SoC of VRLA battery.

• Applied Biological Chemistry
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• v.38 no.5
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• pp.371-375
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• 1995

The antagonistic rhizobacteria Pseudomonas(P.) fluorescens against F. oxysporum and R. solani were isolated and selected, and then, their biological and physiological characteristics were investigated. The posibility and optimum condition of the electroporation of antagonistic rhizobacteria with Ps70, one of the selected one, and plasmid pSV2-neo was studied. Its optimum condition was found with HGEB which contains 1 mM (pH 7.0) hepes and 10% glycerol at setting of 200 resistance, 25 ${\mu}F$ capacitance, and 2.5 kV applied voltage. In addition, the transformation efficiency obtained with pSV2-neo was compared to other plasmids with different sizes. The applied voltage, the buffer composition and the parallel resistor (time constant) were shown to have the greatest effect on transformation efficiency in electroporation. And the rest of the selected rhizobacteria were also successfully transformed with pSV2-neo by electroporation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1064-1071
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• 2015

In this paper, the electrical characteristics of interdigital capacitor with single-layer and multi-layer graphene were compared and analyzed in the microwave region. In equivalent circuit, a capacitor coupled with graphene showed the clear difference in electrical components such as resistance, inductance, and capacitance. In particular, for the capacitor with single-layer graphene, additional inductance and resistance occurred and the electrode resistance was also increased. Meanwhile, the self-resonance frequency of capacitor was shifted toward lower frequency region and its transmitted characteristic was considerably improved at frequency ranging from 0.4 to 4 GHz. The electrical characteristics of the capacitor with multi-layer graphene were somewhat different than the bare capacitor. In conclusion, we could confirm that single-layer graphene greatly influenced the electrical characteristics and performances of interdigital capacitor compared to multi-layer graphene.

• Journal of Power Electronics
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• v.10 no.6
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• pp.749-761
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• 2010

The switching frequency of a power device is a very important parameter in the design of a parallel active power filter (PAPF), but so far, very little discussion has been conducted on it in a quantitative manner in previous publications. In this paper, an extensive analysis on the effects of the switching frequency on the performance of a PAPF is made, and a specification of the switching frequency values with different compensation results is presented. A first-order inertia element and a second-order oscillation element are considered as approximate models of a PAPF, respectively. The compensation characteristic for each order of harmonic current is obtained at different switching frequencies. Then, the THDs of each model for the system loads of a rectifier with resistance and inductance loads are proposed. The compensation results of a PAPF controlled as a first-order inertia element are better than those of a PAPF controlled as a second-order oscillation element. With two types of system loads which are rectifier with resistance and inductance loads and rectifier with resistance, inductance and capacitance loads, the THDs of the source current after compensation are presented with different switching frequencies. The compensation characteristics for the most widely used digital control system are investigated. The situation with an analog control is the theoretical characteristic and it is the best situation. The compensation characteristic of the digital control is worse than the compensation characteristic of the theoretical characteristic. Based on these analyses, the specifications of compensation characteristics with different switching frequencies are quite straightforward. Finally, a practical design example is studied to verify the application.

• Journal of the Society of Naval Architects of Korea
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• v.60 no.5
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• pp.305-319
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• 2023

This study focuses on measuring the relative wave elevation around the KSUPRAMAX-O ship and comparing it with numerical analysis results (potential and computational fluid dynamics). The relative wave elevation is a good indicator of the pressure distribution on the ship's surface, which is affected by the ship's motion, incident waves, and distributed waves. Prior to measuring the relative wave elevation, a comparative test was conducted on resistance type, capacitance type, and ultrasonic type wave probe to measure the relative wave elevation, and it was confirmed that the resistance type wave probe was suitable for measuring the relative wave elevation. A model test was performed at low speed and design speed using resistance type wave probe and compared with the results of numerical analysis result. As for the motion response, it was confirmed that the result of experiments and the result of the numerical analysis were in good agreement. The relative wave elevation showed a similar trend between the experiment and the computational fluid dynamics, but the potential analysis result showed a difference from the experiment in design speed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.5
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• pp.516-522
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• 2020

Water trees can cause considerable damage to the performance of underground cables. Theymay formwithin the dielectric used in buried or water-immersed high voltage cables. They grow in a bush-like or tree-like form, often taking decades before causing damage to a cable's performance. They are usually found on very old underground cables, often in an inaccessible place. It is costly and time-consuming to detect watertrees in underground cables. Tree detection technology, including mathematical modeling,can reduce the maintenance cost and time necessary for detecting these trees.To simulate detection of water trees in this study, a mathematical model ofan XLPE cable and a water tree were developed. The complex water tree structure was simplified, based on two identified patterns of aventedtree. A Matlab simulation was performed to calculate and analyze the capacitance and resistance of a cable insulation layer,based on growth of a watertree. Capacitance size increased about 0.025×10^-13[Farads/mm] compared to normal when the tree area of the cable was advanced to 95% of the insulation layer. The resistance value decreased by about 0.5×10¹⁶[ohm/m]. These changesand changesshowninaBurkes paper physical modeling simulation are similar.The value of mathematical modeling for detecting water trees and damage to underground cables has been demonstrated.