• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Nuclear Engineering and Technology
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• v.21 no.3
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• pp.165-170
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• 1989

The strain rate effects on fracture toughness and fracture resistance characteristics of A533B-1 nuclear pressure vessel steels were examined in the quasi-dynamic test conditions through the microscopic investigation of the intense strain region around crack tip and the microroughness of fracture surface. J-value calculated from the recrystallization etch technique was the same as calculated from the modified-J when the crack extension is less than 1.5mm in a 1/2T-CT specimen. Local fracture strain was calculated from the fracture surface micro-roughness. The local strains were calculated to be the values of 1.8 and 2.0 and were much higher than the macroscopically measured values. It was nearly independent on strain rate and was regarded as a material constant in ductile dimpled rupture. The fracture toughness increased with increase in strain rate while the tearing modulus showed little variation.

• Journal of The Korean Society of Agricultural Engineers
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• v.50 no.4
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• pp.67-75
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• 2008

In construction facilities such as bridges, the fluid boundary layer(or water film) is formed at the structure-soil interface by the inflow into the system due to rainfall or/and rising ground-water. As a result, the structure-soil interaction(SSI) state changes into the structure-fluid-soil interaction(SFSI) state. In general, construction facilities may be endangered by the inflow of water into the soil foundation. Thus, it is important to predict the dynamic SFSI responses accurately so that the facilities may be properly designed against such dangers. It is desired to have the robust tools of attaining such a purpose. However, there has not been any report of a method for the SFSI analyses. The objective of this study is to propose an efficient method of finite element modelling using the new interface element named hybrid interface element capable of giving reasonable predictions of the dynamic SFSI response. This element enables the simulation of the limited normal tensile resistance and the tangential hydro-plane behaviour, which has not been preceded in the previous studies. The hybrid interface element was tested numerically for its validity and employed in the analysis of SFSI responses of the continuous bridge subjected to seismic load under rainfall or/and rising ground-water condition. It showed that dynamic responses of the continuous bridge resting on direct foundation may be amplified under rainfall condition and consequently lead to significant variation of stresses.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.156-156
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• 2016

The effect of nitrogen doping on the mechanical and tribological performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to $1{\mu}m$ in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness of the coatings decreased from $65{\pm}4.8GPa$ to $25{\pm}2.4GPa$ with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the $sp^2$ phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 0.29 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics. To achieve highly conductive and wear-resistant coatings in system components, the friction and wear performances of the coating were investigated. The tribological behavior of the coating was investigated by sliding an SUJ2 ball over the coating in a ball-on-disk tribo-meter. The experimental results revealed that doping using a high nitrogen gas flow rate improved the wear resistance of the coating, while a low flow rate of 0-10 sccm increased the coefficient of friction (CoF) and wear rate through the generation of hematite (${\alpha}-Fe_2O_3$) phases by tribo-chemical reaction. However, the CoF and wear rate dramatically decreased when the nitrogen flow rate was increased to 30-40 sccm, due to the nitrogen inducing phase transformation that produced a graphite-like structure in the coating. The widths of the wear track and wear scar were also observed to decrease with increasing nitrogen flow rate. Moreover, the G-peaks of the wear scar around the SUJ2 ball on the worn surface increased with increasing nitrogen doping.

• Journal of the Korea institute for structural maintenance and inspection
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• v.19 no.6
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• pp.63-71
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• 2015

The objective of the present study is to investigate how elevated temperature ranging from $100^{\circ}C$ to $800^{\circ}C$ as well as room temperature affects the variation of mechanical properties of high strength concrete ($over\;f_{ck}=60MPa\;grade$). In this experiment, specimens were exposed for a period of $2^{\circ}C/min$ to temperatures of $20^{\circ}C$, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$, $700^{\circ}C$ and $800^{\circ}C$, respectively. Accordingly, the study investigated the fire resistance performance of high strength concrete mixed with composite fibers which composed with hybrid fibers and steel fibers. After cooling down to ambient temperature, the following basic mechanical properties were then evaluated and compared with reference values obtained prior to thermal exposure: (i) compressive strength in room temperature; (ii) residual compressive strength; (iii) Poisson's ratio; (iv) weight change; (v) SEM analysis & XRD analysis In addition, XRD and SEM Images analyses were performed to investigate chemical and physical characteristics of high strength concrete with composite fibers according to high temperature.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.2
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• pp.59-64
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• 2004

In this paper, a Cold PHEMT equivalent circuit was proposed, and it is applied to extract extrinsic resistances. By using the proposed Cold PHEMT equivalent circuit, the variation of impedance with frequency and bias were mainly emphasized. Especially, the convergence of impedance with frequency and the change in impedance with bias were carefully analyzed, which may be used for fast extraction of extrinsic resistances. The proposed extraction method demonstrated improving of small signal model accuracy than conventional extraction method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.498-503
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• 1999

La-doped $BaTiO_3$ ceramics were prepared from BaTiO(C_2O_4)_2\;{\cdot}\;XH_2O(BTO)$, which was synthesized by homogeneous precipitation using dimethyl oxalate. The electrical properties of La-doped $BaTiO_3$ were investigated with variation of La-contents and particle size. It was found that a large PTCR (positive temperature coefficient of resistivity) effect was appeared in the conditions at the 0.6 mol% of La-content and at small particle size of BTO as 1.0$\mu\textrm{m}$. The plot of temperature vs. 1/$\varepsilon_m$(T) above Curie temperature $(T_c)$ was agreed with Curie-Weiss law. The potential barrier calculated from measured resistance and capacitance of specimen, also gave higher value at small particle size of BTO as 1.0 $\mu\textrm{m}$ and at La-content of 0.6 mol%.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.4
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• pp.8-15
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• 2000

In this paper, we realize the active PFC(Power Factor Correction) system of BF(Boost Forward) converter with PWM-PFM(Pulse Width Modulation-Pulse Frequency Modulation) control technique to control DC output voltage, to remove the noise like harmonics at output voltage, and to control the input current with sinusoidal wave synchronized by the source voltage.To achieve the desired load voltage and improved PFC, we first implement current shaping control at the inverting stage and make the converted output DC voltage with forward converter. After making the ratio of output voltage to current as 50V/1A and the duty ratio greater than 0.5. When input voltage is 30V and boost inductance is 1.1mH. we control the voltage changing rate according to the variation of load resistance using a PWM-PFM control technique. And finally we prove experimentally, we attenuated its harmonics and improved PF up to 0.96 using the current shaping technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.63-63
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• 2008

Environmental monitoring sub-system has been developed using gas sensor module, Bluetooth module and PDA phone. The gas sensor module consists of $NO_2or$ CO gas sensor and signal processing chips. Gas sensor is composed of the micro-heater, sensing electrode and sensing material. Metal oxide nano-material was selectively deposited on a substrate with micro-heater and was integrated to the gas sensor module. The change in resistance of the metal oxide nano-material due to exposure of oxidizing or deoxidizing gases is utilized as the principle of this gas sensor operation mechanism. This variation detected in the gas sensor module was transferred to the PDA phone by way of Bluetooth module.