• Title/Summary/Keyword: Resistance Temperature Detector

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Development of Compensation-Type Fire Detector Using Metal-Insulator-Transition Critical-Temperature Sensor (금속-절연체 전이 임계온도센서를 이용한 보상식 화재 감지기 개발)

  • Jung, Sun-Kyu;Kim, Hyun-Tak
    • Fire Science and Engineering
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    • v.28 no.1
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    • pp.26-30
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    • 2014
  • A Compensation-type fire detector (CFD) is operated with two functions of a differential-temperature detector and as a fixed-temperature detector. The differential-temperature detector observes a rate of temperature increase, and the fixed-temperature detector measures a given fixed temperature. The differential-temperature detector does not observe the outbreak of fire in slowly increasing temperature conditions, whereas the fixed-temperature detector is not able to observe the outbreak of fire in conditions under predetermined temperature level. We developed a CFD to compensate for weaknesses of both detectors. To compensate for the disadvantages, a sensor of the sensor metal-insulator-transition critical-temperature sensor was used. Temperature coefficient of resistance is the sensitivity for sensor. At $55^{\circ}C$, temperature coefficient of resistance of metal-insulator-transition critical-temperature sensor was 14.15%. Temperature coefficient of resistance of thermistor was about 0.5%. This CFD was operated as two ways that fixed-temperature detector and differential-temperature detector in one sensor.

$V_2O_5/V/V_2O_5$ based uncooled infrared detector by MEMS technology ($V_2O_5/V/V_2O_5$ 다층박막 및 MEMS기술을 이용한 비냉각형 적외선 감지 소자의 제작)

  • Han, Yong-Hee;Hur, Jae-Sung;Park, In-Hoon;Kim, Kun-Tae;Chi-Anh;Shin, Hyun-Joon;Sung Moon
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.131-131
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    • 2003
  • Surface micromachined uncooled IR detector with the optimized VOx bolometric layer was fabricated based on sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$. In order to improve the detectivity of the IR detector, we optimized a few factors in the viewpoint of bolometric material. Vanadium oxide thin film is a promising material for uncooled microbolometers due to its high temperature coefficient of resistance at room temperature. It is, however, very difficult to deposit vanadium oxide thin films having high temperature coefficient of resistance and low resistance because of process limits in microbolometer fabrication. In order to increase the responsivity and decrease noise, we increase TCR of bolometric material and decrease room temperature resistance based on the sandwich structure of the V$_2$O$_{5}$V/V$_2$O$_{5}$ by conventional sputter. By oxygen diffusion through low temperature annealing of V$_2$O$_{5}$V/V$_2$O$_{5}$ in oxygen ambient, various mixed phase vanadium oxide was formed and we obtained TCR in range of-1.2 ~-2.6%/$^{\circ}C$ at room temperature resistance of 5~100k$\Omega$.mega$.

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A Study of the Infrared Temperature Sensing System far Measuring Surface Temperature in Laser Welding(II) - Effect of the System Parameter on Infrared Temperature Measurement - (레이저용접부 온도측정을 위한 적외선 온도측정장치의 개발에 관한 연구 (II) - 적외선 온도측정에서 제인자의 영향 -)

  • 이목영;김재웅
    • Journal of Welding and Joining
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    • v.20 no.1
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    • pp.69-75
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    • 2002
  • This study investigated the effect of the system parameters on penetration depth measurement using infrared temperature sensing system. The distance from focusing lens to detector was varied to diminish the error in measuring weld bead width. The effect of bead surface shape on measured surface temperature profile was evaluated using specimen heated by electric resistance. The measuring distance from laser beam was changed to optimize the measuring point. The results indicated that the monitoring device of surface temperature using infrared detector array was applicable to real time penetration depth control.

Development of a Low-Power Standalone Heat Detector Using a Critical-Temperature Switch (임계온도스위치를 이용한 저전력 단독경보형 정온식 감지기 개발)

  • Jo, Sungwoo;Jung, Sun-Kyu;Son, Jimin;Kim, Hyun-Tak
    • Fire Science and Engineering
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    • v.33 no.4
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    • pp.70-76
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    • 2019
  • This paper reports development of a low-power standalone heat detector using a Critical-Temperature Switch. The Critical-Temperature Switch, which is a thermally sensitive and passive component whose resistance decreases significantly at 70 ℃ due to a metal-insulator transition, provides reliable temperature measurements. This digital-like behavior of the Critical-Temperature Switch can detect fires without a microcontroller, meaning that it can minimize the power consumption of the standalone heat detector. The experimental results showed that the standalone heat detector using the Critical-Temperature Switch complied with the Notification of the National Emergency Management Agency. Compared to conventional standalone heat detectors, only 70% of the power was consumed monitoring the fires.

A new fabrication process of vanadium oxides($VO_{x}$) thin films showing high TCR and low resistance for uncooled IR detectors

  • Han, Yong-Hee;Kang, Ho-Kwan;Moon, Sung-Uk;Oh, Myung-Hwan;Choi, In-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.558-561
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    • 2001
  • Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

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A new fabrication process of vanadium oxides($VO_{x}$) thin films showing high TCR and low resistance for uncooled IR detectors

  • Han, Yong-Hee;Kang, Ho-Kwan;Moon, Sung-Uk;Oh, Myung-Hwan;Park, In-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.558-561
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    • 2001
  • Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

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A study on the characteristic comparision of systems which measure the temperature of coal powder in feader lines of boiler (급탄관 온도 측정시스템의 특성 비교분석에 관한 연구)

  • 오면택;이복규;이원빈
    • 제어로봇시스템학회:학술대회논문집
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    • 1996.10b
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    • pp.597-600
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    • 1996
  • This study has compared the two types of systems which measure the temperature of coal powder in feeder lines of boiler and analyzed operating data. We used RTD(Resistance Temperature Detector) and optic sensors to measure the temperature. From the characteristic comparison of data, field test and system operation, we confirm that the latter is more efficient than the former.

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Characteristics of Indium-Tin-Oxide Electrode for Continuous-flow PCR Chip (연속흐름 중합효소연쇄반응칩 제작을 위한 인듐 산화막 전극의 특성분석)

  • Joung, Seung-Ryong;Kim, Jun-Hyeok;Yi, In-Je;Kang, C.J.;Kim, Yong-Sang
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.3
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    • pp.561-565
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    • 2007
  • We propose glass and PDMS (polydimethylsiloxane) chips for DNA amplification with continuous-flow PCR (polymerase chain reaction). The PDMS microchannel was fabricated using a negative molding method for sample injection. Three heaters and sensors of ITO (indium-tin-oxide) thin films were fabricated on glass chip. ITO heaters and sensors were calibrated accurately for the temperature control of the liquid flow. ITO heater generated stable heat versus applied power. ITO sensor resistance was changed linearly versus temperature increase as a RTD (resistance temperature detector) sensor. As a result, we enable precision temperature control of continuous-flow PCR chip. Using the continuous-flow PCR chip DNA plasmid pKS-GFP 720 bp was successfully amplified.

Fabrication of micro heaters with uniform-temperature area on poly 3C-SiC membrane and its characteristics (다결정 3C-SiC 멤브레인 위에 균일한 온도분포를 갖는 마이크로 히터의 제작과 그 특성)

  • Chung, Gwiy-Sang;Jeong, Jae-Min
    • Journal of Sensor Science and Technology
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    • v.18 no.5
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    • pp.349-352
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    • 2009
  • This paper describes the fabrication and characteristics of micro heaters built on AlN($0.1{\mu}m$)/3C-SiC($1{\mu}m$) suspended membranes by surface micromachining technology. In this work, 3C-SiC and AlN films are used for high temperature environments. Pt thin film was used as micro heaters and temperature sensor materials. The resistance of temperature sensor and the power consumption of micro heaters were measured and calculated. The heater is designed for operating temperature up to about $800^{\circ}C$ and can be operated at about $500^{\circ}C$ with a power of 312 mW. The thermal coefficient of the resistance(TCR) of fabricated Pt resistance of temperature detector(RTD)'s is 3174.64 ppm/$^{\circ}C$. A thermal distribution measured by IR thermovision is uniform on the membrane surface.

RTD Bypass Line Elimination at Kori Nuclear Power Plant 3&4

  • Yoon, Duk-Joo;Lee, Chang-Sup;Jun, Hwang-Yong;Lee, Jae-Yong;Song, Dong-Soo
    • Proceedings of the Korean Nuclear Society Conference
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    • 1997.05a
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    • pp.213-218
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    • 1997
  • The RTD Bypass Loops at Kori Unit 3&4 will be removed and a new system will be designed and will be installed to replace it. The replacement system provides equal or better performance and eliminates some Persistent problems. The Resistance Temperature Detector (RTD) bypass line is eliminated to reduce the radiation exposure to operators and workers. After the elimination, the resistance temperature detectors are installed in scoop of the reactor coolant piping to detect a representative temperature. This study includes safety evaluation, RTD response time Analysis, Uncertainty Analysis, LOCA evaluation and Structural Analysis.

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