• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.2
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• pp.380-386
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• 2002

Damage behaviors induced in silicon carbide by an impact of particle having different material and size were investigated. Especially, the influence of the impact velocity of particle on the cone crack shape developed was mainly discussed. The damage induced by spherical impact was different depending on the material and size of particles. Ring cracks on the surface of specimen were multiplied by increasing the impact velocity of particle. The steel particle impact produced larger ring cracks than that of SiC particle. In the case of high velocity impact of SiC particle, radial cracks were produced due to the inelastic deformation at the impact site. In the case of the larger particle impact, the damage morphology developed was similar to the case of smaller particle one, but a percussion cone was farmed from the back surface of specimen when the impact velocity exceeded a critical value. The zenithal angle of cone cracks developed into SiC material decreased monotonically with increasing of the particle impact velocity. The size and material of particle influenced more or less on the extent of cone crack shape. An empirical equation, $\theta$= $\theta$$\sub$st/, v$\sub$p/(90-$\theta$$\sub$st/)/500 R$\^$0.3/($\rho$$_1$/$\rho$$_2$)$\^$$\frac{1}{2}$/, was obtained as a function of impact velocity of the particle, based on the quasi-static zenithal angle of cone crack. It is expected that the empirical equation will be helpful to the computational simulation of residual strength in ceramic components damaged by the particle impact.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.169-175
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• 1998

The plasma etching of polysilicon was performed with the HBr/$Cl_2/He-O_2$ gas mixture. The residual layers after photoresist strip were investigated using x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The etch residue was identified as silicon oxide deposited on the top of the patterned polysilicon. In order to clarify the formation mechanism of the etch residue, the effects of various gas mixtures such as $Cl_2/He-O_2$and HBr/$Cl_2$were investigated. We found that the etch residue is well formed in the presence of oxygen, suggesting that the etch residue is caused by the reaction of oxvgen and non-volatile silicon halide compounds. Wet cleaning and dry etch cleaning processes were applied to remove the polysilicon etch residue, which can affect the electrical characteristics and further device processes. XPS results show that the wet cleaning is suitable for the removal of the etch residue.

• Journal of Korea Foundry Society
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• v.40 no.2
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• pp.25-33
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• 2020

The effects of mold variable and main alloying element on the mechanical properties of ductile cast iron poured into shell stack mold were investigated. The strength and hardness of with the smaller cross-section of the diameter of 6.25mm were higher than those of 12.50mm. On the other hand, the elongation of the former was lower than that of the latter. The strength and hardness of the specimens obtained from the center layer in the 5-story stack mold were the lowest and those for other specimens were increased with increased distance from the center. The elongation of those were the highest of all. The strength and hardness of the specimens obtained from the center layer were decreased the elongation was increased with the increased number of layers. The strength and hardness were increased and the elongation was decreased roughly with the increased amounts of reaidual magnesium and carbon content added, respectively. The strength and hardness were increased and the elongation was decreased roughly with the increased amounts of silicon content added to 2.45wt% and rather decreased with that to 2.85wt%. The effect of silicon content showed the opposite tendency to those of residual magnesium and carbon content.

• Journal of the Korean Ceramic Society
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• v.44 no.7
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• pp.381-386
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• 2007

A porous reaction bonded silicon carbide (RBSC) was fabricated by a molten Si infiltration method. The porosity and flexural strength of porous RBSC fabricated in this study were dependent upon the amount of carbon source used in the SiC/carbon preform as well as the amount of Si infiltrated into the SiC/carbon preform. The porosity and flexural strength of porous RBSC were in the range of $20 vo1.{\sim}49 vo1.%$ and $38{\sim}61 MPa$, respectively. With increase of carbon contents and molten Si for infiltration, volume fraction of the pores was gradually decreased, and flexural strength was increased. The porous RBSCs fabricated with the same amount of molten Si show less residual Si around neck with increase of carbon source, as well as a new SiC was formed around neck which resulted in the decreased porosity and improvement of the flexural strength. In addition, decrease of the porosity and increase of the flexural strength were also obtained by increase of the amount of molten Si with the same amount of carbon source. However, it was found that the flexural strength of porous RBSC depends on the porosity rather than the amount of the newly formed SiC in neck phase between SiC particles used as a starting material.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1295-1296
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• 2006

수소화된 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)의 이력 현상이 능동형 유기 발광 다이오드(Active-Matrix Organic Light Emitting Diode) 디스플레이 패널을 구동할 경우에, 발생할 수 있는 잔상(Residual Image) 문제를 단위 소자 및 회로에서 실험을 통하여 규명하였다. 게이트 시작 전압을 바꾸어 VGS-ID 특성을 측정할 경우, 게이트 시작 전압이 5V에서 시작한 VGS-ID 곡선이 10V에서 시작한 VGS-ID 곡선에 비해 왼쪽으로 0.15V 이동하였다. 이러한 결과는 게이트 시작 전압의 차이에 의해 발생한 트랩된 전하량(Trapped Charge) 변화로 설명할 수 있다. 또한, 인가하는 게이트 전압 간격을 0.5V에서 0.05V로 감소시켰을 때 전하 디트래핑 비율의 변화(Charge De-trapping Rate)로 인하여, 이력 현상(Hysteresis Phenomenon)으로 인한 단위 소자에서의 문턱전압의 변화가 0.78V에서 0.39V로 감소함을 관찰하였다. 제작된 2-TFT 1-Capacitor의 ANGLED 화소에서 (n-1)번째 프레임에서의 OLED 전류가 (n)번째 프레임에서의 OLED 전류에 35%의 전류오차를 발생시키는 것을 측정 및 분석하였다.

• Journal of the Korea Institute of Military Science and Technology
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• v.21 no.6
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• pp.760-766
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• 2018

The present study investigates the effect of PMMA and BN content on microstructure, mechanical and dielectric properties of silicon nitride($Si_3N_4$) ceramics in $Y_2O_3-Al_2O_3$ additive system. The total additive content was fixed at 8 wt.% and the amount of PMMA varies from 0 to 40 wt.% and BN varies from 0 to 36 wt.%, respectively. The crystalline phases of the samples were determined by X-ray diffraction analysis. All the sintered sample shows complete transformation of ${\alpha}$ to ${\beta}-Si_3N_4$ during the sintering process indicated that the phase transformation was unaffected by the PMMA or BN content. However, the microstructure shows that the residual porosity increased with increasing PMMA and BN content. In addition, the flexural strength and the dielectric constant decrease with addition of PMMA and BN due to the residual porosity. This article provides empirical study of design parameters for $Si_3N_4$-based radome materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.159-160
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• 2002

To investigate the humidity effect on tribological behaviors of Si-DLC/DLC multi-layers, the samples were prepared using a system consisted of an ion-gun for deposition DLC films and a balanced magnetron sputter for introducing silicon atoms to Si-DLC films. The Si-DLC/DLC multi-layers were composed of pure DLC films and Si-incorporated DLC films alternatively and had different bilayer numbers. Hardness and residual stress were drastically decreased through the formation of Si-DLC/DLC multi-layers compared to those of the pure and Si-incorporated DLC films. Wear results obtained under the various humidity conditions (<10%, $40{\sim}50%$, and >85%) showed that the pure DLC film was largely depended on the humidity while the Si-DLC and the Si-DLC/DLC multi-layers were little affected by the environmental humidity. Although friction coefficients of all samples were increased with the relative humidity, the multi-layer films showed relatively lower friction coefficients that those of the single films.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.2
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• pp.122-130
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• 2012

Adhesive bend and shear tests of micro-sized bonded component have been performed to clarify the relationship between effects of heat-treatment on the adhesive strength and the bonded specimen shape using Weibull analysis. Multiple micro-sized SU-8 columns with four different diameters were fabricated on a Si substrate under the same fabrication condition. Heat-treatment can improve both of the adhesive bend and shear strength. The improvement rate of the adhesive shear strength is much larger than that of the adhesive bend strength, because the residual stress, which must change by heat-treatment, should effect more strongly on the shear loading. In case of bend type test, the adhesive bend strength in the smaller diameters (50 and $75\;{\mu}m$) widely vary, because the critical size of the natural defect (micro-crack) should vary more widely in the smaller diameters. In contrast, in case of shear type test, the adhesive shear strengths in each diameter of the columns little vary. This suggests that the size of the natural defects may not strongly influence on the adhesive shear strength. All the result suggests that both of the adhesive bend and shear strengths should be complicatedly affected by heat-treatment and the bonded columnar diameter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.556-561
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• 2008

This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small and constant at low frequency region and shows about 70 dB at 10 kHz. However, in case of a compressively stressed composite diaphragm, the SPL of the fabricated microspeakers shows higher output pressure than those of a tensile-stressed diaphragm. It produces more than 66 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with $20V_{peak-to-peak}$, sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone. From the experimental results, it is superior to have a compressively composite diaphragm in order to produce a high SPL in piezoelectric microspeaker.