• Proceedings of the PSK Conference
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• 2001.04a
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• pp.121.1-121.1
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• 2001

• Proceedings of the SAREK Conference
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• 2007.06a
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• pp.22-22
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• 2007

• Current Photovoltaic Research
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• v.11 no.1
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• pp.8-12
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• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• Proceedings of the Korean Society of Toxicology Conference
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• 2003.10b
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• pp.125-125
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• 2003

Respiratory effects in full time welders include bronchitis, airway irritation, lung function changes, and lung fibrosis. Welder's pneumoconiosis has been generally determined to be benign and not associated with respiratory symptoms based on the absence of pulmonary function abnormalities in welders with marked radiographic abnormalities.(omitted)

• Journal of Microbiology and Biotechnology
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• v.7 no.6
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• pp.367-372
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• 1997

• 한국약용작물학회:학술대회논문집
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• 2007.11a
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• pp.322.1-322.1
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• 2007

• Proceedings of the Korean Society of Crop Science Conference
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• 2023.04a
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• pp.182-182
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• 2023

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.61-63
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• 2005

Pentacene based OTFT on PC and PES plastic substrates have been fabricated in a scale of 5 inches. We could get a small OTFT device enough to be applicable for AMOLED by acquiring the at least misalignment margin through a contact aligner. And also we could find out the degradation of device parameter through the integration processes and improve the properties by using a buffer layer as an etch stopper in an active patterning. Through these, the mobility of device is more than about $0.2cm^2/Vs$ and $I_{on}/I_{off}$ is higher than $10^5$.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.11a
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• pp.537-538
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• 2018

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.9-9
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• 2006