• Bulletin of the Korean Chemical Society
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• 제27권9호
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• pp.1456-1458
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.44-47
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• 2004

Fabrication of barrier layer on PES substrate and plastic OLED device by atomic layer deposition are carried out. Simultaneous deposition of 30nm of $AlO_x$ film on both sides of PES gives film MOCON value of 0.0615g/$m^2$.day (@38$^{\circ}C$, 100% R.H). Introduction of conformal $AlO_x$ film by ALD resulted in enhanced barrier properties for inorganic double layered film including PECVO $SiN_x$. Preliminary life time to 91% of initial luminance (1300 cd/$m^2$ ) for 100nm of PECVD $SiN_x$/30nm of ALD $AlO_x$ coated plastic OLED device was 260 hours.

• Journal of Microbiology and Biotechnology
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• 제11권6호
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• pp.1111-1114
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• 2001

An extracellular fibrinolytic-enzyme-producing bacterium was isolated from Doen-Jang, a Korean traditional fermented flood, and identified as Bacillus sp. DJ based on its morphology and cellular fatty acid composition. The total extracellular fibrinase (EF) from Bacillus sp. DJ was analyzed using three fibrin zymographic techniques, SDS-fibrin zymography (SDS-FZ), isoelectrofocucing-fibrin zymographs(IEF-FZ), and a two-dimensional SDS-fibrin zymographic analysis (2D SDS-FZ). As a result, the EP map of Bacillus sp. DJ was established. The results suggest that the 2D SDS-FZ method will be a useful tool for the proteomic approach for many other bacterial pretenses.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전력기술부문
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• pp.93-95
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• 2005

본 논문에서는 태양광 발전 시스템의 계통연계 운전 보호 협조 알고리즘 적용 및 시험을 위해 개발되고 있는 태양광 발전용 PC의 설계 및 실험 결과에 대하여 제시하고자 한다. 태양광 발전 시스템은 태양광 에너지를 전기 에너지로 변환하여 주는 태양 전지판과 발전된 전기 에너지를 전력 계통에 연계하여 주는 전력 변환 장치(Power Conversion System)로 구성되어 있다. 개발된 PCS는 10kw 태양광 전지에서 발전된 전력을 상용 계통에 연계할 수 있도록 개발 되었으며 본 논문에서는 전체 시스템의 극성과 계통 연계 운전 결과에 대하여 제시하고자 한다. 개발된 PCS는 태양광 발전 시스템의 보호 협조 알고리즘 개발과 분산전원 시스템 관련 연구에 활용될 계획이다.

• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2813-2816
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• 2011

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1116-1119
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• 2008

We developed phosphorescent white OLEDs with high efficiency and color stability. By engineering device architecture in which confined excitons within the emissive layer by using adequate interlayer and balanced recombination of charge carriers by using stepwise hole transporting layer system, these WOLEDs showed power efficacy of 43.6 lm/W with CRI = 62 and 36 lm/W with CRI = 72 at $100\;cd/m^2$ without outcoupling enhancements.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1071-1074
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• 2003

The effects of ZnS insertion on the characteristics of CaS:Pb phosphor were investigated. The intensity of photoluminescence of ZnS inserted CaS:Pb excited by 347nm were increased while that excited by 254nm was unchanged, compared to those of CaS:Pb thin film. The electroluminescent display having ZnS inserted CaS:Pb showed lower threshold voltage and higher efficiency than those of CaS:Pb ELD device.

• Journal of Microbiology and Biotechnology
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• 제15권1호
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• pp.35-39
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• 2005

To identify the activity of recombinant subtilisins (subtilisin BPN' and subtilisin Carlsberg), three different zymography methods, SDS-fibrin zymography (SDS-FZ), reverse fibrin zymography (RFZ), and isoelectric focusingfibrin zymography (IEF-FZ), were used. The recombinant subtilisins BPN' and Carlsberg did not migrate into the electrophoretic field based on a Laemmli buffer system, instead forming a "binding mode" at the top part of the separating gels with the SDS-FZ and RFZ techniques. Yet, this problem was resolved when using IEF-FZ with a pH range from 3 to 10. In addition, all these methods enabled the activity of a recombinant pro-subtilisin DJ-4 to be detected without a refolding pathway.

• 한국생명과학회:학술대회논문집
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• 한국생명과학회 2006년도 제47회 학술심포지움 및 추계국제학술대회
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• pp.44.1-44.1
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• 2006

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -3
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• pp.1555-1557
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• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.