• Korean Journal of Materials Research
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• v.25 no.6
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• pp.288-292
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• 2015

New lead-free piezoelectric ceramics $0.96[\{Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}\}_{1-x}La_x(Ti_{1-y}Nb_y)O_3]-0.04SrTiO_3$ (BNKT-ST-LN, where $x=y=0.00{\leq}(x=y){\leq}0.015)$ were synthesized using the conventional solid-state reaction method. Their crystal structure, microstructure, and electrical properties were investigated as a function of the La and Nb (LN) content. The X-ray diffraction patterns revealed the formation of a single-phase perovskite structure for all the LN-modified BNKT-ST ceramics in this study. The temperature dependence of the dielectric curves showed that the maximum dielectric constant temperature ($T_m$) shifted towards lower temperatures and the curves became more diffuse with an increasing LN content. At the optimum composition (LN 0.005), a maximum value of remnant polarization ($33C/cm^2$) with a relatively low coercive field (22 kV/cm) and high piezoelectric constant (215 pC/N) was observed. These results indicate that the LN co-modified BNKT-ST ceramic system is a promising candidate for lead-free piezoelectric materials.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.169-170
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• 2006

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.69-74
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• 2007

[ $0.6Pb(Sc_{1/2}Ta_{1/2})O_3-0.4PbTiO_3$ ] (hereafter PSTT) ceramics were prepared by the molten salt synthesis (MSS) method using KCI as a flux. Formation of perovskite phase was investigated by a differential thermal analysis (DTA) and X-ray diffraction (XRD) analysis in the temperature range from $600^{\circ}C$ to $850^{\circ}C$. A 92% perovskite phase was synthesized at $750^{\circ}C$ for 2 hrs using the MSS method, while 82% perovskite phase was synthesized at $850^{\circ}C$ for 4ks using the calcining of mixed oxide (CMO) method. This result could be due to the improvement in reactivity of $Sc_2O_3$ by melting of KCI. The MSS specimen sintered at $1,100^{\circ}C$ for 4hrs showed a dielectric constant of 11,200, a remnant polarization of $13.5{\mu}C/cm^2$ and a coercive field of 10.198 kV/cm, which was discussed in view of the microstructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.707-711
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• 2014

The $0.99Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-0.01LaAlO_3$, $0.01LaMnO_3$ or $0.01LaFeO_3$ (0.99BNKT-0.01LA, 0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure and morphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (field emission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA, LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leading to decrease in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysterisis loops. The effects of the BNKT ceramics modified by La-based $ABO_3$ pervskite structure on the electric-field induced strain were investigated, and the largest normalized unipolar strain ($S_{max}/E_{max}$) was found in BNKT-0.01LF ceramic.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.631-637
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• 2003

We have evaluated structural and electric, ferroelectric properties of PZT(30/70) thick film prepared by using 1,3-propanediol based sol-gel method on Pt/Ti/SiO$_2$/Si substrates. Rapid thermal annealing (RTA) is used to reduce the thermal stress and final furnace annealing is processed at $650^{\circ}C$. As the results of SEM analysis, we find that we get 350 nm in thickness for one coating and 1 $\mu$m for three times of coating. In the results of C-D analysis at 1 kHz, dielectric constant ($\varepsilon$$_{r}$) and dissipation factor were 886 and 0.03, respectively. C-V curve is shaped as a symmetrical butterfly. Leakage current density at 200 kV/cm is 1.23${\times}$10$^{-5}$ A/cm$^2$ and in the results of hysteresis loops measured at 150 kV/cm, the remnant polarization (P$_{r}$) and the coercive field (E$_{c}$) are 33.8 $\mu$C/cm$^2$ and 56.9 kV/cm, respectively. PZT(30/70) thick film exhibits relatively good ferroelectric, electric properties.s..

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.205-210
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• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.