• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.202-207
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• 2015

A CMOS relaxation oscillator, with high robustness over process, voltage and temperature (PVT) variations, is designed in $0.18{\mu}m$ CMOS. The proposed oscillator, consisting of full-differential charge-discharge timing circuit and switched-capacitor based voltage-to-current conversion, could be expanded to a simple open-loop frequency synthesizer (FS) with output frequency digitally tuned. Experimental results show that the proposed oscillator conducts subcarrier generation for frequency-modulated ultra-wideband (FM-UWB) transmitters with triangular amplitude distortion less than 1%, and achieves frequency deviation less than 8% under PVT and phase noise of -112 dBc/Hz at 1 MHz offset frequency. Under oscillation frequency of 10.5 MHz, the presented design has the relative FS error less than 2% for subcarrier generation and the power dissipation of 0.6 mW from a 1.8 V supply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.125-129
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• 1992

When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1583-1585
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• 2003

Maxwell displacement current(MDC) measuring technique has been employed to study the dielectric property of Langmuir-films. A method for determining the dielectric relaxation time ${\tau}$ of floating monolayers on the water surface is presented. MDC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time ${\tau}$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed ${\alpha}$ and the molecular area Am. Compression speed ${\alpha}$ was about 30, 40, 50mm/min.

• Bulletin of the Korean Chemical Society
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• v.16 no.12
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• pp.1184-1189
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• 1995

The rapid quenching dynamics of F center excitation by OH- defects in KCl crystals are investigated by monitoring ground state absorption bleach recovery, using a picosecond streak camera absorption spectrometer. F center absorption bleach in OH--doped crystals shows three distinguishable recovery components with the current temporal resolution, designated as slow, medium and fast components. The slow one is due to the normal relaxation process of F* centers as found in OH--free crystals. The others are consequent on energy transfer from electronically excited F centers to OH--vibrational levels. The fast component is a minor energy transfer process and resulting from the relaxation of somewhat distant, not the closest, associated pairs of F* and OH- defects. The energy transfer between widely separated F* and OH- defects opens up a recovery process via the medium component which is assisted by OH- librations, lattice vibrations and OH- dipole reorientations. The quenching behaviors of F* luminescence and photoionization by OH- are explained well by the relaxation process of the medium component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.148-151
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• 2002

In order to prevent the failures of underground distribution power cables we need to measure insulation condition in the field. Until now we used DC high voltage as a power source for the cable diagnosis but it was not proper method to the XLPE insulation cables because DC high voltage can affect sound insulation and can't diagnose exactly insulation degradation. For these reasons we imported isothermal relaxation current measurement system called by KDA-1 from germany but it's reliability did not proved in our URD cables. DC voltage decay measurement system was developed by domestic company but they don't have field experience. In this paper we tried to prove reliability of these two systems in the field. Through the field diagnosis and Ac breakdown test the two systems showed similar results.

• Journal of Korean Neurosurgical Society
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• v.38 no.5
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• pp.375-379
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• 2005

Objective : Papaverine has been used in treating vasospasm following subarachnoid hemorrhage[SAH]. However, its action mechanism for cerebral vascular relaxation is not clear. Potassium channels are closely related to the contraction and relaxation of cerebral smooth muscle. Therefore, to identify the role of potassium and calcium channels in papaverine-induced vascular relaxation, we examine the effect of papaverine on potassium channels in freshly isolated smooth muscle cells from rat basilar artery. Methods : The isolation of rat basilar smooth muscle cells was performed by special techniques. The whole cell currents were recorded by whole cell patch clamp technique in freshly isolated smooth muscle cells from rat basilar artery. Papaverine was added to the bath solution. Results : Papaverine of $100{\mu}M$ into bath solution increased the amplitude of the outward $K^+$ current which was completely blocked by BKCa[large conductance calcium dependent potassium channels]blocker, IBX[iberiotoxin], and calcium chealator, BAPTA[l,2-bis[o-aminophenoxy]ethane-N,N,N',N'-tetraacetic acid], in whole cell mode. Conclusion : These results strongly suggest that potassium channels may play roles in papaverine-induced vascular relaxation in rat basilar artery.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.70-77
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• 2013

We suggest a low area and high efficiency switched-mode power supply (SMPS) with a pulse width modulation (PWM) generator based on a pseudo relaxation-oscillating technique. In the proposed circuit, the PWM duty ratio is determined by the voltage slope control of an internal capacitor according to amount of charging current in a PWM generator. Compared to conventional SMPSs, the proposed control method consists of a simple structure without the filter circuits needed for an analog-controlled SMPS or the digital compensator used by a digitally-controlled SMPS. The proposed circuit is able to operate at switching frequency of 1MHz~10MHz, as this frequency can be controlled from the selection of one of the internal capacitors in a PWM generator. The maximum current of the core circuit is 2.7 mA, and the total current of the entire circuit including output buffer driver is 15 mA at 10 MHz switching frequency. The proposed SMPS has a simulated maximum ripple voltage of 7mV. In this paper, to verify the operation of the proposed circuit, we performed simulation using Dongbu Hitek BCD $0.35{\mu}m$ technology and measured the proposed circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.75-79
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• 1993

The Thermally Stimulated Current(TSC) method has been allied to study the influence of the structural change and interface on the electrical properties of epoxy composites. Three DGBA- MeTHPA matrix model samples mixed different ratios arts silica(SiO$_2$) filled sample and silaln treating-filled sample have been studied. Above room temperature, the relaxation mode ${\alpha}$ peak associated with T$\_$g/ has been located at 110$^{\circ}C$. Below glass transition temperature(T$\_$g/), three relaxation modes are observed in all samples : a ${\beta}$ mode situated at 10$^{\circ}C$, a ${\gamma}$ mode located at -40$^{\circ}C$ and a $\delta$mode appeared in -120$^{\circ}C$, which may be due to segmental motion, side chains, substitution and terminal groups. The analysis of its fine structure indicates that constitution of elementary processes is characterized by the activation energy and relaxation time. Also the change of the molecular structure and their thermal motion are compared with the relaxation mode and conduction mechanism in TSC spectra through the dielectric properties and FTIR measurements.

• The KIPS Transactions:PartB
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• v.9B no.6
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• pp.735-744
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• 2002

This paper proposes learning performance improvement of support vector machine using the kernel relaxation and the dynamic momentum. The dynamic momentum is reflected to different momentum according to current state. While static momentum is equally influenced on the whole, the proposed dynamic momentum algorithm can control to the convergence rate and performance according to the change of the dynamic momentum by training. The proposed algorithm has been applied to the kernel relaxation as the new sequential learning method of support vector machine presented recently. The proposed algorithm has been applied to the SONAR data which is used to the standard classification problems for evaluating neural network. The simulation results of proposed algorithm have better the convergence rate and performance than those using kernel relaxation and static momentum, respectively.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.239-246
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• 1997

The ZnO is stabilize dielectric constant over a broad temperature range because its addition makes the relaxation time short. In this study, the composite oxide material (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ was mixed by ZnO additive material and the dielectric polarization characteristics was studied. The relative density was over 90[%] at all specimen in the structural characteristics. Among of the specimen, the relative density of (B $a_{0.85}$ $Ca_{0.15}$)Ti $O_{3}$ with ZnO (0.4mol) has a 95[%]. The grain size of composite oxide material with an increasing ZnO increased and it was 1.0[.mu.m]-1.22[.mu.m]. In the electrical characteristics, the charge and discharge current was increased by ZnO addition. The dielectric relaxation time was increased by space charge polarization at above 110[.deg. C] and the dielectric relaxation time was fixed by space charge polarization of para-dielectric layer at below 110[.deg. C]. The dielectric relaxation time was maximum when the grain size was small. The dielectric relaxation time is decreased with an additive material ZnO and interface polarization, existing void at the grain and grain boundary. The remnant polarization is increased and the coercive electric field is decreased by ZnO.