• 제목/요약/키워드: Refractive index structure function ($C_n^2$)

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SLODAR System Development for Vertical Atmospheric Disturbance Profiling at Geochang Observatory

  • Ji Yong Joo;Hyeon Seung Ha;Jun Ho Lee;Do Hwan Jung;Young Soo Kim;Timothy Butterley
    • Current Optics and Photonics
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    • 제8권1호
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    • pp.30-37
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    • 2024
  • Implemented at the Geochang Observatory in South Korea, our slope detection and ranging (SLO-DAR) system features a 508 mm Cassegrain telescope (f /7.8), incorporating two Shack-Hartmann wave-front sensors (WFS) for precise measurements of atmospheric phase distortions, particularly from nearby binary or double stars, utilizing an 8 × 8 grid of sampling points. With an ability to reconstruct eight-layer vertical atmospheric profiles, the system quantifies the refractive index structure function (Cn2) through the crossed-beam method. Adaptable in vertical profiling altitude, ranging from a few hundred meters to several kilometers, contingent on the separation angle of binary stars, the system operates in both wide (2.5 to 12.5 arcminute separation angle) and narrow modes (11 to 15 arcsecond separation angle), covering altitudes from 122.3 to 611.5 meters and 6.1 to 8.3 kilometers, respectively. Initial measurements at the Geochang Observatory indicated Cn2 values up to 181.7 meters with a Fried parameter (r0) of 8.4 centimeters in wide mode and up to 7.8 kilometers with an r0 of 8.0 centimeters in narrow mode, suggesting similar seeing conditions to the Bohyun Observatory and aligning with a comparable 2014-2015 seeing profiling campaign in South Korea.

Electronic and Optical Properties of amorphous and crystalline Tantalum Oxide Thin Films on Si (100)

  • Kim, K.R.;Tahir, D.;Seul, Son-Lee;Choi, E.H.;Oh, S.K.;Kang, H.J.;Yang, D.S.;Heo, S.;Park, J.C.;Chung, J.G.;Lee, J.C.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.382-382
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    • 2010
  • $TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

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졸-겔 침지코팅법으로 제조된 TiO2 박막의 구조적.광학적 특설 (Structural and optical properties of TiO2 thin films prepared by Sol-Gel dip coating method)

  • 김동진;이학준;한성홍;김의정
    • 한국광학회지
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    • 제13권3호
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    • pp.197-203
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    • 2002
  • 촉매로 사용한 HCl 농도를 달리하여 TiO$_2$ 졸(T1-0.7N, T2-2.ON)을 제조하고, 졸-겔 침지코팅법을 이용하여 TiO$_2$ 박막을 제작하였으며, 각 박막의 열처리 온도에 따른 박막의 구조적 및 광학적 특성을 측정.분석하였다. X-선 회절분석 결과 T1박막의 경우, 400-80$0^{\circ}C$의 열처리 온도에서는 아나타제 결정상을 나타내었고, 100$0^{\circ}C$에서는 루타일 결정상을 나타내었다. T2 박막의 경우, 루타일 결정상이 보다 낮은 열처리 온도인 80$0^{\circ}C$에서 나타났다. 그리고 박막의 결정성은 T2 박막이 T1 박막보다 우수하였다. 열처리 온도가 증가함에 따라 박막의 결정 크기는 증가하였으며, T2 박막의 경우 아나타제 결정의 크기는 T1 박막보다 크며 루타일 결정의 크기는 작은 것으로 측정되었다. 박막의 표면 상태는 루타일 결정상을 지닌 박막이 아나타제 결정상을 지닌 박막보다 치밀하게 형성되어졌고, 이러한 현상은 T2박막에서 보다 뚜렷하게 나타났다. 100$0^{\circ}C$에서 열처리한 박막은 300~700nm의 파장영역에서 결정상 전이에 의한 밴드갭 에너지의 변화와 박막의 조성변화로 인한 흡수의 발생, 그리고 입자의 크기 증가에 의한 산란효과로 투과율의 감소를 초래하였다. 제조된 박막의 굴절률은 열처리 온도가 증가할수록 증가하였으며, 두께와 porosity는 감소하였다. 또한 T2 박막의 굴절률은 T1 박막보다 높았고, porosity는 낮았다.