• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.981-984
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• 2004

유기 발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)N,N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidineltris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 시간에 따른 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압의 시간에 따른 EL(electro luminance)을 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.137-141
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• 2004

저항특성이 다른 ITO박막의 구조특성과 표면특성을 XRD와 AFM(atomic force microscopy), SEM(scanning electron microscopy)을 이용하여 관측하였다. 접촉방식인 4단자 법을 사용하여 ITO박막의 표면전기저항을 측정하였다. 관측된 구조 및 표면특성을 바탕으로 비파괴 비접촉방식을 이용한 근접장 마이크로파 현미경을 이용하여 얻은 ITO박막의 표면저항특성과 비교 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.128-131
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• 2004

유기발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)/N.N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidine/tris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 전압인가에 따른 반사계수(S11)와 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압에 따른 EL(electro luminance)를 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.12
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• pp.27-32
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• 2002

The intensity modulated type (reflective method) optical fiber sensor is a well -known method and widely applied to the displacement measurements and other industrial purposes. This type sensor has the advantages of relatively cheap cost, small sensor size and easiness of operation. The sensitivity of the sensor is very dependent of several error terms; the variation in the intensity of the light source and the changes in the surface reflectivity of the object. An optical fiber coupled displacement probe with a new compensation method is presented in this paper. The proposed displacement sensor can measure the displacements of the target surface independent of surface reflectivity error that is caused by the materials and surface processing grade.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.273-276
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• 1997

Seeing is an intelligent act. Retina is the most important part among the components of eye which is comprised of iris, pupil, lens, optic disk, and so forth. Because retina acts like a photo receiver to detect light from every object, if damaged, animals have a severe problem to live along with themselves and sometimes they lose their sight. In the ophthalmology, doctors use special instrument to see exact retina image of object and operate the surgery by rotating focus control knob. In this study, a basic test is done to achieve the auto focus control instrument. Specially made sledge and attenuator are installed on the optic bed to change the distance and laser power between the first reflective mirror and the second one. Control panel which is compiled by Visual C t t to control stepping motors ,laser power and photodiode are implemented with ADA-board.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.149-149
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.541-544
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• 2002

The reflective liquid crystal(LC) imager in one panel Liquid Crystal on Silicon(LCoS) System must have the properties such as fast response time, high contrast ratio(C/R) and voltage holding ratio(VHR) which are more related to the lifetime of imager than the others. As the high-output light including a short wavelength from UHP lamp is exposed to LCoS imager, the indium metal impurities, which decrease the C/R and VHR, are diffused from ITO thin film on glass. To ensure the high reliable LCoS imager for HD projection TV, we have studied the effects of the plasma treatment on ITO film to reduce impurities in imager.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.129-135
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• 1995

SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.