• Title/Summary/Keyword: Reflection Mode

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A Study on the Guided Wave Mode Conversion using Self-calibrating Technique (자가교정기법에 의한 유도초음파 모드전이에 관한 연구)

  • Park, Jung-Chul;Cho, Youn-Ho
    • Journal of the Korean Society for Nondestructive Testing
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    • v.20 no.3
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    • pp.206-212
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    • 2000
  • The guided wave mode conversion phenomena were investigated for the NDE of a plate-like structure with thickness variation. The ratios of reflection and transmission (R/T) were measured via the self-calibrating procedure which allows us to obtain experimental guided wave data in a more reliable way regardless of the coupling uncertainty between transducer & specimen. The results on R/T could be used to determine the thickness reduction of the structure. It was shown that not only the incident modes but also the converted ones need to be considered in the self-calibrating guided wave inspection to extract a reasonable correlation between experimental data & the thickness variation. Through this study, the potential of guided wave inspection as a quantitative NDE technique was explored based on the combined concept of self-calibration & multi-mode conversion in guided wave scattering problems.

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Signal Transmission Properties Improvement of Serial Advanced Technology Attachment Connector Using Analysis of Differential Impedance (차동 임피던스 분석을 사용한 SATA 커넥터의 신호 전달 특성 개선)

  • Yang, Jeong-Kyu;Kim, Moonjung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.2
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    • pp.47-53
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    • 2013
  • In this work, signal transmission properties of SATA connector have been improved using its differential impedance calculation and its design revision to closer impedance matching. Using 3 dimensional electromagnetic field simulator, the differential mode S-parameter was calculated to investigate its signal fidelity. The differential impedance is calculated from the equation of the odd mode impedance with inductance, capacitance, mutual inductance, and mutual capacitance. The differential impedance of SATA connector was calculated to be $107.3{\Omega}$ and did not meet the design specification with $100{\Omega}{\pm}5%$. In order to achieve its impedance range and improve its signal transmission properties, SATA connector's design has been revised with two different directions and analyzed through the calculation of differential impedance, differential reflection loss, and differential insertion loss.

The Design of Ku-Band Cavity BPF (Ku-Band Cavity BPF설계)

  • Jeon, Hyung-Joon;Kang, Chang-Soo
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.42 no.4
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    • pp.69-76
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    • 2005
  • In this paper, a 2 stage 6-pole bandpass filter(BPF) is designed and implemented by using triple-mode cavity for satellite payload system. The BPF has a 100MHz bandwidth at the center frequency of 14.5GHz(Ku-band) and the response of the filter is the Chebyshev function. The cavity filter uses two orthogonal $TM_{113}$ modes and one $TM_{012}$ mode. The coupling between the adjacent cavityes(intercavity coupling) results in a Chebyshev response and is accomplished by only H-filed component of If modes. The size and location of intercavity slot is determined by the coupling equation from E-and H-field of TE and TM resonant modes in circular cavity. The 2-stage 6-pole triple-mode cavity BPF has the insertion loss of 2.4dB and the reflection loss of 15dB in the passband. The triple-mode BPF proposed in this thesis can be used as channel filters for satellite payload system and can minimize filter assembly in general wireless communication system.

Design and Fabrication of a Simple Orthogonal Mode Transduce with Good Iolation (Isolation 특성이 좋은 Orthogonal Mode Transducer 설계와 제작)

  • 오이석;이진원;홍진영
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.6
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    • pp.914-919
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    • 2000
  • A simple orthogonal mode transducer(OMT) for X-band has been proposed in this paper. This OMT is designed such that a polarized wave can be guided in a direction using several thin guiding posts, and the other orthogonally polarized wave can be guided in the other direction using other thin guiding posts. The OMT consists of a T-shaped waveguide section with guiding posts, two tapering waveguide arms, and has three flanges for connection with two adapters and an antenna. The optimum numbers and the optimum positions of the guiding posts were obtained numerically using the HFSS CAD tool. The isolation between two polarizations in a manufactured OMT is higher than 42.8 dB and the reflection from the OMT is lower than -17.5 dB at the frequency band of 9.5 GHz

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A Multi-Section Complex-Coupled DFB Laser with a Very Wide Range of Self-Pulsation Frequency and High Modulation Index (매우 넓은 영역의 Self-Pulsation 주파수와 높은 변조 지수를 가자는 다중 영역 복소 결합 DFB 레이저)

  • Kim, Boo-Gyoun;Kim, Tae-Young;Kim, Sang-Taek;Kim, Sun-Ho;Park, Kyung-Hyun
    • Korean Journal of Optics and Photonics
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    • v.17 no.2
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    • pp.191-197
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    • 2006
  • We analyze the self-pulsation(SP) characteristics due to mode beating of two modes emitted in a multi-section complex-coupled (CC) DFB laser composed of two DFB sections and a phase control section between them. SP frequency due to mode beating of the two modes is determined by the difference of grating periods in the two CC DFB regions. As the difference of grating periods in the two CC DFB regions increases, the SP frequency increases from very low frequency to the THz region. In the case of a mode which is not located in the stop band of the other DFB region, the mode propagates into the other DFB region without a high reflection, so that output powers emitted in a multi-section CC DFB laser have high modulation indexes due to the large interaction between the two modes.

Ka-Band Variable-Gain CMOS Low Noise Amplifier for Satellite Communication System (위성 통신 시스템을 위한 Ka-band 이득제어 CMOS 저잡음 증폭기)

  • Im, Hyemin;Jung, Hayeon;Lee, Jaeyong;Park, Sungkyu;Park, Changkun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.8
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    • pp.959-965
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    • 2019
  • In this paper, we design a low noise amplifier to support ka-band satellite communication systems using 65-nm RFCMOS process. The proposed low noise amplifier is designed with high-gain mode and low-gain mode, and is designed to control the gain according to the magnitude of the input signal. In order to reduce the power consumption, the supply voltage of the entire circuit is limited to 1 V or less. We proposed the gain control circuit that consists of the inverter structure. The 3D EM simulator is used to reduce the size of the circuit. The size of the designed amplifier including pad is $0.33mm^2$. The fabricated amplifier has a -7 dB gain control range in 3 dB bandwidth and the reflection coefficient is less than -6 dB in high gain mode and less than -15 dB in low gain mode.

Plasma-Assisted Molecular Beam Epitaxy of InXGa1-XN Films on C-plane Sapphire Substrates (플라즈마분자선에피탁시법을 이용한 C-면 사파이어 기판 위질화인듐갈륨박막의 에피탁시 성장)

  • Shin, Eun-Jung;Lim, Dong-Seok;Lim, Se-Hwan;Han, Seok-Kyu;Lee, Hyo-Sung;Hong, Soon-Ku;Joeng, Myoung-Ho;Lee, Jeong-Yong;Yao, Takafumi
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.185-189
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    • 2012
  • We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

A Basic Study on the Variation of Temperature Characteristics for Attenuation Coefficient and Sound Velocity in Biological Tissues

  • Park, Heung-Ho
    • Journal of Biomedical Engineering Research
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    • v.14 no.3
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    • pp.273-282
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    • 1993
  • This study is concerned with the temperature dependence characteristics of ultrasound parameters in biological tissues, which are basic on the noninvasive deep body temperature estimation. Used parameters are ultrasonic attenuation coefficient and sound velocity In order to accomplishment our purpose, several signal processing methods were used. Attenua4iorl coefficient was estimated by spectral difference method and sound velocity was estimated by P-P method. And we also examined these methods through a series of IN VITRO experi mentis that used tissue-mimicking phantom samples and biological tissue samples. In order to imitate the biological soft tissue two kinds of phantom samples are used, one is agar phantom sample which is composed of agar, graphite, N-propyl alcohol and distilled water, and the other is fat phantom sample which is composed of pure animal fat. And the ultrasound transmission mode and reflection mode experiments are performed on the pig's spleen, kidney and fat. As a result, it is found that the temperature characteristics are uniform in case of phan- tom samples but not in biological tissues because of complicate wave propagation within them. Consequently, the possibility of temperature measurement using ultrasound on biological tissue is confirmed and its results may contribute to the establishment of reference values of internal temperature measurement of biological tissues.

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Applicability of Color Corescanner to the Analysis and Data-base of Drill Cores (시추코어 분석 및 데이터베이스화를 위한 칼라 코어스캐너의 응용)

  • ;Ghodrat Rafat
    • Proceedings of the Korean Geotechical Society Conference
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    • 2001.03a
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    • pp.249-256
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    • 2001
  • Optical Color Corescanner firstly developed by DMT-GeoTec, Germany and further upgraded through the Korea-Germany joint project is capable of duplicating the core surfaces. The tool uses a digital CCD line camera. As the core is rotated by an electric motor, the camera scans the uppermost line, everytime with a circumferential increment of up to 0.05mm(20pixels/mm) and hence a complete 360$^{\circ}$ unwrapped image(core image) is produced. This paper illustrated diverse research benefits of such core images from several test sites in our country. All scanned images could be stored as a data-base one and easily used with software facilities \circled1 to evaluate a percental distribution of mineral components or grain size etc. not only for the rock classification but also for e.g. the assessment of building stones, \circled2 to study potential reservoirs as a hydrocarbon indicator using ultraviolet fluorescence reflection from cores, \circled3 to facilitate the qualitative and quantitative analysis of fractures, \circled4 to evaluate the fractures and thin bedded reservoirs using spectral color responses. Based on abundant scanning experiments, it would seem that this imaging work should lead to reflecting the future trend in underground survey toward a more comprehensive understanding of the properties and behaviors of in situ rocks.

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As BEP Effects on the Properties of InAs Thin Films Grown on Tilted GaAs(100) Substrate (기울어진 GaAs(100) 기판 위에 성장된 InAs 박막 특성에 대한 As BEP 효과)

  • Kim, Min-Su;Leem, Jae-Young
    • Journal of the Korean institute of surface engineering
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    • v.43 no.4
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    • pp.176-179
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    • 2010
  • The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.