• Title/Summary/Keyword: Red visible light

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SPECTROSCOPIC AND PHOTOMETRIC STUDY OF STARBURST GALAXIES: OPTICAL AND NEAR INFRARED PROPERTIES OF A BLUE COMPACT DWARF GALAXY MRK 49 IN THE VIRGO CLUSTER

  • Sung, Eon-Chang;Kyeong, Jae-Mann;Byun, Yong-Ik
    • Journal of The Korean Astronomical Society
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    • v.41 no.5
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    • pp.121-137
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    • 2008
  • We present optical and near-infrared imaging and long-slit spectroscopy for the blue compact dwarf galaxy (BCD) Mrk 49 in the Virgo Cluster. The surface brightness distribution analysis shows that Mrk 49 consists of an off-centered blue bright compact core of r = 10" and a red faint outer exponential envelope. The $H_{\alpha}$ image and color difference suggest that these two components have different stellar populations: a high surface brightness population of massive young stars and an underlying low surface brightness population of older stars. The redder near-infrared colors of the inner most region suggest that the near-infrared flux of Mrk 49 originates from evolved massive stars associated with the current star-forming activity. The total apparent magnitude is $B_T\;=\;14.32$ mag and the mean effective surface brightness is ${\mu}_{eff}(B)\;=\;21.56$ mag $arcsec^{-2}$. Long-slit spectroscopy shows that Mrk 49 rotates apparently as a solid body within r = 10" in a plane at position angle 55 degrees with an amplitude of about $20\;km\;sec^{-1}$. The measured radial velocity of Mrk 49 was derived as $1,535\;km\;sec^{-1}$; and the total mass of stars and gases is in the range of 3 to $6\;{\times}\;10^9\;M_{\odot}$. The mass-to-light ratios for the central region of Mrk 49 in I and B band are estimated 1.0 and 0.5, respectively. The upper limit of the dark matter to visible matter ratio seems to be < 5. The oxygen abundance is $12\;+\;\log(O/H)\;=\;8.21\;{\pm}\; 0.1$ which is about one quarter of the solar value while the relative helium abundance appears to be similar to that of the sun.

Synthesis of 6-(10-Alkylphenothiazine-3-vinylene)-2-methyl-4-dicyanomethylene-4H-pyran (적색발광재료용 6-(10-알킬페노티아진-3-비닐렌)-2-메틸-4-디시아노메틸렌-4H-피란의 합성)

  • Chung, Pyung Jin;Sung, Jin Hee
    • Applied Chemistry for Engineering
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    • v.18 no.6
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    • pp.587-591
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    • 2007
  • 6-(10-Alkylphenothiazine-3-vinylene)-2-methyl-4-dicyanomethylene-4H-pyran derivatives were synthesized by Knoevenagel condensation. They are red-emitting materials for organic light emitting device (OLED) which composed of electron donor of 6-(10-Alkylphenothiazine-3-vinylene) groups and electron acceptor of -2-methyl-4-dicyanomethylene-4H-pyran groups by a conjugated structure. The structural properties of reaction products were analyzed FT-IR and $^1H-NMR$ spectroscopy. The thermal stabilities and reactivities were measured by melting points and yields. The UV-visibles and PL properties can be determined by exitation spectra and emission spectra, respectively.

Super-resolution Algorithm Using Adaptive Unsharp Masking for Infra-red Images (적외선 영상을 위한 적응적 언샤프 마스킹을 이용한 초고해상도 알고리즘)

  • Kim, Yong-Jun;Song, Byung Cheol
    • Journal of Broadcast Engineering
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    • v.21 no.2
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    • pp.180-191
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    • 2016
  • When up-scaling algorithms for visible light images are applied to infrared (IR) images, they rarely work because IR images are usually blurred. In order to solve such a problem, this paper proposes an up-scaling algorithm for IR images. We employ adaptive dynamic range encoding (ADRC) as a simple classifier based on the observation that IR images have weak details. Also, since human visual systems are more sensitive to edges, our algorithm focuses on edges. Then, we add pre-processing in learning phase. As a result, we can improve visibility of IR images without increasing computational cost. Comparing with Anchored neighborhood regression (A+), the proposed algorithm provides better results. In terms of just noticeable blur, the proposed algorithm shows higher values by 0.0201 than the A+, respectively.

Effect of Deposition Temperature on the Optical Properties of La2MoO6:Dy3+,Eu3+ Phosphor Thin Films (증착 온도에 따른 La2MoO6:Dy3+,Eu3+ 형광체 박막의 광학 특성)

  • Cho, Shinho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.5
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    • pp.387-392
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    • 2019
  • $Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.

Efficient Red-Color Emission of InGaN/GaN Double Hetero-Structure Formed on Nano-Pyramid Structure

  • Go, Yeong-Ho;Kim, Je-Hyeong;Gong, Su-Hyeon;Kim, Ju-Seong;Kim, Taek;Jo, Yong-Hun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.174-175
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    • 2012
  • (In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

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Two Strains of Colletotrichum gloeosporioides Penz. Causing Anthracnose on Pepper Fruits (고추탄저병균 Colletotrichum gloeosporioides Penz.의 2계통)

  • Kim Wan Gyu;Cho Eui Kyoo;Lee Eun Jong
    • Korean Journal Plant Pathology
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    • v.2 no.2
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    • pp.107-113
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    • 1986
  • Each of 48 monoconidial isolates of Colletotrichum gloeosporioides Penz. obtained from diseased fruits of pepper was classified into strain G or strain R based upon pathogenicity to green and red fruits, morphology of conidia, and cultural characteristics in potato dextrose agar. The strain G was designated for isolates to cause anthracnose symptoms both on green and red fruits. All isolates of the strain G produced conidia abundantly. but produced no perithecia and setae in PDA. Conidia of all isolates in the strain G were attenuated or round at one end. The optimum temperature for mycelial growth of strain G was $26-28^{\circ}C$. The mycelia of strain G in PDA appeared to be whitish when young, and turned to be dark in old culture. Symptoms on pepper fruits caused by the strain G were somewhat sunken to be circular to elliptical lesions. Yellowish conidial masse were observed at the center of lesions, and the lesions turned to irregular shape and to reddish brown color in the later stage of disease development. No setae were visible on the acervuli. The strain R was designated for isolates to cause anthracnose symptoms only on red fruits of pepper. All isolates of the strain R produce conidia, and perithecia of Glomerella cingulata (Stonem.) Spauld. & v. Sch. in PDA. Some isolates of the strain R produced setae in culture under fluorescent light. Conidia of all isolates in the strain R were round and blunt at the ends. The optimum temperature for mycelial growth of strain R was the same as that of strain G. The mycelial growth of strain R was faster than that of strain G in PDA. The mycelia of strain R in PDA appeared to be gray to dark. Symptoms on pepper fruits caused by the strain R were circular to irregular black ring-spots Short setae or no setae were visible on the acervuli.

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Evaluation of Phototoxicity for Cosmetics and Alternative Method (화장품 광독성 평가와 동물대체시험법)

  • Lee, Jong-Kwon;Sin, Ji-Soon;Kim, Jin-Ho;Eom, Jun-Ho;Kim, Hyung-Soo;Park, Kui-Lea
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.31 no.3 s.52
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    • pp.245-251
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    • 2005
  • Safety is one of the key issue in the regulation of cosmetics. Cosmetic Act deals with it in Korea. The guidance for the testing cosmetic ingredients and their safety evaluation are prepared by Korea Food and Drug Administration. Ultraviolet radiation could Induce skin damage, edema, erythema, photoaging, immune dysfunction and skin cancer. Ultraviolet radiation is classified as Group 2A(probably carcinogenic to humans) by International Agenry for Reaserch on Cancer(IARC). The in vitro methodologies for evaluating the toxic potential of ingredients reported in the literature have not yet been sufficiently validated for use in areas other than the study for mutagenicity/genotoxicity, for pre-screening for severe irritancy, for screening of phototoxicity and for evaluating the percutaneous absorption. The 3T3 neutral red uptake photoxicity test (3T3 NRU PT) was accepted as OECD toxicity guideline in 2002. The 3T3 NRU PT is an in vitro method based on a comparison of the cytotoxicitv of a chemical when tested in the presence and in the absence of exposure to a non-cytotoxic dose of UVA/visible light.

Defect-related yellowish emission of un doped ZnO/p-GaN:Mg heterojunction light emitting diode

  • Han, W.S.;Kim, Y.Y.;Ahn, C.H.;Cho, H.K.;Kim, H.S.;Lee, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.327-327
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    • 2009
  • ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

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Developmental Stage and Temperature Influence Elongation Response of Petiole to Low Irradiance in Cyclamen persicum (저광도에 대한 시클라멘 엽병의 발육 단계 및 온도 조건별 신장 반응)

  • Oh, Wook;Kim, Ki-Sun
    • Horticultural Science & Technology
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    • v.28 no.5
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    • pp.719-727
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    • 2010
  • Reduced irradiance promotes shoot elongation depending on developmental stage and environmental factors and decreases plant quality in $Cyclamen$ $persicum$ Mill. To determine the petiole elongation responses to low irradiance, 'Metis Scarlet Red' cyclamen at different developmental stages [juvenile (5-6 unfolded leaves), transitional (1-3 visible flower buds), or mature (1-3 elongating peduncles)] was grown in growth modules at 60 (low light, LL) or 240 (high light, HL) ${\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ PPFD within the growth chambers at different temperatures [16/12 (low temperature, LT), 22/18 (medium temperature, MT), or 28/$24^{\circ}C$ (high temperature, HT) (day/night)]. In Experiment I, juvenile plants were either kept in an LL or HL module during the entire treatment of 4 weeks or were transferred to the other module at 1, 2, or 3 weeks after treatment in an MT chamber. In Experiment II, juvenile, transitional, or mature plants were moved to the HL module at 0, 3, 6, 9, or 12 days after being placed in the LL module at the MT chamber and grown for 21 days. In Experiment III, transitional plants were moved to the HL module at 0, 3, 6, 9, or 12 days after being placed in the LL module at the LT, MT, or HT chambers. As the exposure duration to LL increased from 0 to 4 weeks or from 0 to 12 days, petiole length and plant height increased at all temperatures and developmental stages. In Experiment I, the exposure to LL during the latter period, rather than the early period, increased elongation rate. In Experiment II, petiole elongation in transitional plants was more sensitive to LL than juvenile or mature plants during the early period of the treatment for 12 days. In Experiment III, petiole length increased with increasing temperature and exposure duration to LL. Petiole elongation rate at HT increased rapidly from the beginning of LL exposure as compared to LT. Increase of $6^{\circ}C$ in temperature had the similar effect to LL exposure for 3 days in petiole elongation. To conclude, transitional cyclamen under higher temperatures responds more immediately to low irradiance and elongates its petioles.

Overview of UV-B Effects on Marine Algae (자외선이 해조류에 미치는 영향에 관한 고찰)

  • 한태준
    • Korean Journal of Environmental Biology
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    • v.17 no.1
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    • pp.1-9
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    • 1999
  • Numerous observations revealed strong evidence of increased middle ultraviolet radiation or UV-B (280 ~ 320 nm) at the earth's surface resulting from stratospheric ozone depletion. UV is the waveband of electromagnetic radiation which is strongly absorbed by nucleic acids and proteins, thus causing damage to living systems. It has been recorded in the East Sea, Korea that solar UV-B impinging on the ocean surface penetrates seawater to significant depths. Recent researches showed that exposure to UV-B for as short as 2h at the ambient level (2.0 Wm$^{-2}$) decreased macroalgal growth and photosynthesis and destroyed photosynthetic pigments. These may suggest that UV-B could be an important environmental factor to determine algal survival and distribution. Some adaptive mechanisms to protect macroalgae from UV-damage have been found, which include photoreactivation and formation of UV-absorbing pigments. Post-illumination of visible light mitigated UV-induced damage in laminarian young sporophytes with blue the most effective waveband. The existence of UV-B absorbing pigments has been recognized in the green alga, Ulva pertusa and the red alga, Pachymeniopsis sp., which is likely to exert protective function for photosynthetic pigments inside the thalli from UV-damage. Further studies are however needed to confirm that these mechanisms are of general occurrence in seaweeds. Macroalgae together with phytoplankton are the primary producers to incorporate about 100 Gt of carbons per year, and provide half of the total biomass on the earth. UV-driven reduction in macroalgal biomass, if any, would therefore cause deleterious effects on marine ecosystem. The ultimate impacts of increasing UV-B flux due to ozone destruction are still unknown, but the impression from UV studies made so far seems to highlight the importance of setting up long-term monitoring system for us to be able to predict and detect the onset of large -scale deterioration in aquatic ecosystem.

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