• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.962-964
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• 1999

We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.71-74
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• 2015

Soluble polyaniline was synthesized by attaching titanium isoproxide ($Ti(OPr)_4$) to the amine group of the aniline. Approximately 1 to 1 molar ratio of aniline and $Ti(OPr)_4$ was mixed and polymerized with ammonium persulfate. The FTIR result showed clear difference between $TiO_2$-aniline composite ($TiO_2An$) and $TiO_2$-polyaniline composite ($TiO_2PAn$). Although the $TiO_2An$ had negligible UV-visible absorption, the $TiO_2PAn$ showed strong absorption in the UV-visible region. Photoluminescence (PL) peaks of $TiO_2An$ were shifted toward red with the reduction of the excitation energy, which could be due to the multiple emission centers. The luminescence peak shift stopped at 501 nm. The PL spectra of $TiO_2PAn$ exhibited three emission peaks at 2.88 eV (430 nm), 2.48 eV (501 nm) and 2.22 eV (558 nm). The new emission center (2.22 eV) was observed after polymerization. Field emission scanning electron microscope image showed crack-free composite film.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.575-580
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• 2014

We uniformly coated Eu(III)- and Tb(III)-doped yttrium oxide onto the surface of $SiO_2$ spheres and then characterized them by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction crystallography and UV-Visible absorption. 2D and 3D photoluminescence image map profiles were reported for the core-shell type structure. Red emission peaks of Eu(III) were observed between 580 to 730 nm and assigned to $^5D_0{\rightarrow}^7F_J$ (J = 0 - 4) transitions. The green emission peaks of Tb(III) between 450 and 650 nm were attributed to the $^5D_4{\rightarrow}^7F_J$ (J = 6, 5, 4, 3) transitions. For annealed samples, Eu(III) ions were embedded at a $C_2$ symmetry site in $Y_2O_3$, which was accompanied by an increase in luminescence intensity and redness, while Tb(III) was changed to Tb(IV), which resulted in no green emission.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.461-472
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• 2018

$Gd_2O_3:Eu/Bi$ nanoparticles were synthesized via spray pyrolysis and applied for the preparation of a luminescent pearl pigment as an anti-counterfeiting material. The luminescence properties were optimized by changing the $Eu^{3+}$ and $Bi^{3+}$ concentration. Ethylene glycol was used as an organic additive to prepare the $Gd_2O_3:Eu/Bi$ nanoparticles. The highest emission intensity was achieved when the total dopant content was 10.0 at.% and the mole fraction of Bi was 0.1. The concentration quenching was mainly due to dipole-dipole interactions between the same activators, and the critical distances were 9.0 and $19.6{\AA}$ for $Eu^{3+}$ and $Bi^{3+}$, respectively. The prepared $Gd_2O_3:Eu/Bi$ powder exhibited an average size of approximately 82.5 nm and a narrow size distribution. Finally, the $Gd_2O_3:Eu/Bi$ nanophosphor coated on the surface of the pearl pigment was confirmed to have good red emission under irradiation from a portable ultraviolet light-emitting diode lamp (365 nm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.432-436
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• 2006

The $ZnGa_2O_4$ and Mn, Cr-doped $ZnGa_2O_4$ Phosphors were synthesized through conventional solid state reactions. The XRD patterns show that the $ZnGa_2O_4$ has a (3 1 1) main peak and a spinel phase. The emission wavelength of $ZnGa_2O_4$ showed main peak of 420 nm and maximum intensity at the sintering temperature of $1100^{\circ}C$. In the crystalline $ZnGa_2O_4$, the Mn shows green emission (510 nm, $^4T_1-^6A_1$) with a quenching concentration of 0.6 mol%, and the Cr shows red emission (705 nm, $^4T_2-^4A_2$) with a quenching concentration of 2 mol%. These results indicate that $ZnGa_2O_4$ Phosphors hold promise for potential applications in field emission display devices with high brightness operating in full color regions.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.515-518
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• 2013

We present synthesis of a new kind of organic-inorganic hybrid polymer, poly xylene-hexamethyltrisiloxane hybrid (PXS) by a new synthetic way from o-xylene and 1,1,3,3,5,5-hexamethyltrisiloxane. The merged molecular structure of the two monomeric components for the PXS polymer was confirmed by $^{13}C$- and $^1H$-NMR, and FT-IR. Its optical absorption and emission properties were investigated by UV-vis absorption and photoluminescence (PL) spectroscopy. The PXS exhibits absorption at 265 nm which is the same with the o-xylene but tailing up to nearly 400 nm, which is maybe related the polymeric structure of the PXS. For the PL investigation, the PXS shows red-shift of the peak from 288 nm (o-xylene) to 372 nm in the case of excitation at 265 nm, at which both PXS and o-xylene have sufficiently high absorption for excitation. When 325-nm laser is used for excitation, the PXS shows a broader peak at 395 nm compared to the excitation at 265 nm and the o-xylene shows no luminescence probably due to the lack of absorption at 325 nm.

• Journal of Institute of Convergence Technology
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• v.4 no.1
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• pp.21-27
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• 2014

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• Current Optics and Photonics
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• v.3 no.3
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• pp.248-255
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• 2019

Spherical $CeO_2:Ho^{3+}/Yb^{3+}$ particles were synthesized using spray pyrolysis, and the upconversion (UC) properties were investigated with changing the preparation conditions and the infrared pumping power. The resulting particles had a size of about $1{\mu}m$ and hollow structure. The prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles exhibited intense green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$ and showed weak red or near-IR peaks. In terms of achieving the highest UC emission, the optimal concentrations of $Ho^{3+}$ and $Yb^{3+}$ were 0.3% and 2.0%, respectively. The UC emission intensity of prepared $CeO_2:Ho^{3+}/Yb^{3+}$ particles had a linear relationship with crystallite size and concentration quenching was caused by dipole-dipole interaction between the same ions. Based on the dependency of UC emission on the pumping power, the observed green upconversion was achieved through a typical two-photon process and concluded that the main energy transfer from $Yb^{3+}$ to $Ho^{3+}$ was involved in the ground-state adsorption (GSA) process.

• Korean Journal of Materials Research
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• v.31 no.10
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• pp.582-585
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• 2021

Y₂O₃:Eu_x (x = 0.005, 0.01, 0.02, 0.03, 0.05, 0.1 mol) phosphors are synthesized with different concentrations of Eu³⁺ ions by solvothermal method. The crystal structure, surface and optical properties of the Eu doped Y₂O₃ phosphors are investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) and photoluminescence excitation (PLE) analyses. From X-ray diffraction (XRD) results, the crystal structure of the Eu doped Y₂O₃ phosphor is found to be cubic. The maximum emission spectra of the Eu doped Y₂O₃ phosphors are observed at 0.05 mol Eu³⁺ concentration. The photoluminescence of 615 nm in the Eu doped Y₂O₃ phosphors is associated with ⁵D₀ → ⁷F₂ transition of Eu³⁺ ions. The decrease in emission intensity of 0.1 mol Eu doped Y₂O₃ is interpreted by concentration quenching. The International Commission on Illumination (CIE) coordinates of 0.05 mol Eu doped Y₂O₃ phosphor are X = 0.6547, Y = 0.3374.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).