• Title/Summary/Keyword: Rectifying characteristics

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A study on Improvement of Conversion Efficiency of Rectifying circuit for Wireless Power Transmission (무선전력전송용 정류회로의 변환효율 개선에 관한 연구)

  • Park, Dong-Kook
    • Journal of Advanced Navigation Technology
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    • v.14 no.5
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    • pp.655-660
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    • 2010
  • This paper examines RF-to-DC conversion efficiency of rectifying circuit for wireless power transmission. The rectifying circuit consists of low pass filter, diode circuits and dc pass filter. All these components may be effect on the conversion efficiency. Using the simulation, we study these components how to effect on the conversion efficiency. On the basis of the simulation results, the 912MHz rectifying circuit with 50% efficiency at low input power such as 0dBm is fabricated and its characteristics are measured.

Multivariate Sequential Rectifying Inspection with Applicability to the Motor Vehicle Emission Certified Test (자동차 배출가스보증시험에 다변수 축차검사의 적용에 관한 연구)

  • Jo, Jae-Rip
    • Journal of Korean Society for Quality Management
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    • v.19 no.2
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    • pp.63-77
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    • 1991
  • Currently the problem of air pollution caused by the motor vehicle emission is one of the most serious problems to be solved. Thus we needed the inspection method and technical innovation constraining the motor vehicle emission. In order to establish the more reasonable certified test, the multivariate sequential rectifying inspection plan designed in this paper has been applied to the domestic vehicles by analyzing the statistic characteristics of the emission distribution. This inspection method is designed to satisfy the evaluation measure constraining domestic vehicle emission, and it serves the defect rectifying system and performance certification of catalytic converts. As the prior parameter for the domestic vehicles, we used the data for the catalytic converts which passed the certified test excuted by the EPK. For the case of engine test, we used those data which passed the certified test of domestic vehicles. The multivariate sequential rectifying inspection plan of the vector parameter is able to minimize the average sample number and increase the pass probability of operating characteristic curve.

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Linear Tapered Slot Rectifying Antenna for Portable UHF-Band RFID System (휴대용 UHF대역 RFID 시스템을 위한 선형 테이퍼드 슬롯 정류 안테나)

  • Pyo, Seongmin
    • Journal of IKEEE
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    • v.24 no.1
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    • pp.368-371
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    • 2020
  • In this paper, we propose a linear tapered slot rectifying antenna for a portable UHF-band RFID system. Since the proposed rectifying antenna does not use a dielectric substrate, the planar antenna is implemented with a thin metal thickness. The rectifier circuit converts input RF power into output DC voltage using a voltage doubler circuit based on two anti-parallel schottky diodes. The rectifying antenna is integrated by the voltage doubler circuit into a linear tapered slot antenna. For conjugate impedance matching of the rectifying circuit and the linear tapered slot antenna, the source-pull method was utilized by adjusting the angle of the tapered slot and the length of the antenna feed line. The proposed antenna prototype has been verified with the electrical and radiation characteristics through RF-DC conversion and far-field radiation test in open space measurement environment. Finally, the proposed antenna is realized to 0.23-wavelength (75 mm) and 0.18-wavelength (60 mm) at 915 MHz center frequency.

The Operation Characteristics of Dual-mode Power Converter for DC Reactor Type Superconducting Fault Current Limiter (DC 리액터형 고온초전도한류기를 위한 전력변환기의 dual-mode 운전특성)

  • 전우용;이승제;안민철;이안수;윤용수;윤경용;고태국
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.02a
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    • pp.43-46
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    • 2003
  • The dc reactor type high-Tc superconducting fault current limiter(SFCL) is composed of three parts, a power converter, a magnetic core reactor(MCR) and a dc reactor. This study concerned with the power converter of the DC reactor type high-Tc SFCL. The rectifying devices which power converter of 6.6kV/200A SFCL consists of have to endure high voltage. We propose the dual mode power converter to reduce the voltage which each rectifying device endures. In the single phase the experiment and simulation of dual mode power converter and the simulation of power converter with one bridge rectifier are performed. The current of each system with different power converter has a same tendency and the voltage which rectifying device of dual mode power converter endures is reduced in half by comparison with that of power converter with one bridge rectifier. We found dual mode power converter can be applied to SFCL.

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Practical Limitations of Theoretical Acceptance Sampling (이론 샘플링 검사의 실무적 한계)

  • Choe, Seong-Un
    • Proceedings of the Safety Management and Science Conference
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    • 2011.11a
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    • pp.205-211
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    • 2011
  • The papaer reviews four theoretical acceptance sampling plans as OC(Operating Characteristics) curve based inspection, rectifying inspection, switching inspection, and continuous inspection. In addition, the study presents practical limitations of theoretical acceptance sampling by attribute and by variable. Finally, following research also recommends the sampling inspection based on production technology. However, the inspection method requires quality expertise with various experience and implicit knowledge of the field.

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Aging Characteristics of Silicone Rubber for Outdoor Use by Inclined-Plane Method (경사평면법에 의한 옥외용 실리콘 고무의 열화 특성)

  • 김정호;박용관;조한구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.501-504
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    • 1997
  • We investigated the tracking and erosion resistance of the silicone rubber by Inclined-Plane Method. And. with the variation of experiment time, the chance of the leakage current waveform was evaluated. The typical leakage current waveform was the form of mixture of sinusoidal wave and rectifying wave. It is thought that the sinusoidal wave is due to conductivity of contaminant when wet. and the rectifying wave is due to arc of dry band.

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NOISE CHARACTERISTICS OF SIMPLIFIED FORWARD-TYPE RESONANT CONVERTER

  • Higashi, Toru
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.559-562
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    • 2000
  • The problem of noise generation due to PWM switched-mode power converter has been widely noticed from the viewpoint of Electromagnetic Interference(EMI). Many kings of topologies for resonant converters have been developed both to overcome this noise problem and to attain high power efficiency. It is reported in references that resonant converters which are derived from PWM converter using resonant switch show much lower noise characteristics than PWM converter, and that current-mode resonant converter is more sensitive to stored charge in rectifying diode than voltage-mode counterpart concerning surge generation at diode’s turn-off. On the other hand, above mentioned resonant converters have defect of high-voltage stress on semiconductor switch and complicated circuit configuration. Hence, the simplified Forward-type resonant converter has been proposed and investigated due to its prominent features of simplicity of circuit configuration, low voltage stress and high stability. However, its noise characteristics still remain unknown. The purpose of this paper is to study quantitatively the noise characteristics of this simplified Forward-type resonant converter by experiment and analysis. The influence of parasitic elements and stored charge in rectifying diode on noise generation has been clarified.

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Characteristics of $RuO_2$/n-GaN Schottky Diode ($RuO_2$/n-GaN 구조의 Schottky Diode 특성)

  • Kim, Dong-Sik
    • 전자공학회논문지 IE
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    • v.46 no.3
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    • pp.1-5
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    • 2009
  • In this paper, we study the electrical characteristics of $RuO_2$/n-GaN Schottky diodes fabricated by using electrochemical metallization. The solution for GaN Schottky electrodes of $RuO_2$ is perchloric acid($HClO_4$). Thickness of $RuO_2$ layer depend on supplied voltage and dipping time. We verified the possibility of the rectifying and non-rectifying devices' electrode which was depend on the thickness of $RuO_2$ layer.

Interfacial Structures and Activation Processes of Doped Si Semiconductors (Doping된 Si반도체의 계면구조와 활성화과정)

  • Chun, Jang-Ho
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.7
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    • pp.1042-1048
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    • 1990
  • The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.

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