• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.37-39
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• 1996

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

• Bulletin of the Korean Chemical Society
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• v.10 no.6
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• pp.529-535
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• 1989

A general perturbation series solution of the Smoluchowski equation is applied to investigate the rate of recombination and the remaining probability of a pair of particles in liquids. The radiative boundary condition is employed and the convergence of the perturbation series is analyzed in terms of a convergene factor in time domain. The upper bound to the error introduced by the n-th order perturbation scheme is also evaluated. The long time behaviors of the rate of recombination and the remaining probability are found to be expressed in closed forms if the perturbation series is convergent. A new and efficient method of purely numerical integration of the Smoluchowski equation is proposed and its results are compared with those obtained by the perturbation method. For the two cases where the interaction between the particles is given by (i) the Coulomb potential and (ii) the shielded Coulomb potential, the agreement between the two results is found to be excellent.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.43-48
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• 2018

The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

• Journal of the Korea Fashion and Costume Design Association
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• v.22 no.3
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• pp.63-74
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• 2020

Modern clothes are part of formative arts and express experimentation and originality. This tendency is especially prominent in structural fashion. This study set out to analyze structural fashion in various aspects, examining and analyzing the expressive and formative characteristics of Deformation and contribute to the development of creative fashion design. The approach of peer debriefing was used with three fashion experts to identify structural clothes in the women's haute couture collections from a total of 24 seasons from S/S of 2008 to F/W of 2019. The clothes with Deformation characteristics were then identified to analyze expressive and formative characteristics. The expressive characteristics of Deformation in structural clothes were exaggeration, distortion, and recombination. Exaggeration was expressed with exaggerated sizes, forms, and excessive use. Distortion was expressed with distorted forms and functions and through optical illusions. Recombination was expressed with the recombination of forms and roles. The formative characteristics of Deformation were maximum, playfulness, and unfamiliarity. The study connected the expressive characteristics to the formative ones and examined them simultaneously, finding that "distortion" and "playfulness" represented the expressive and formative characteristics, respectively. The characteristics of Deformation are expressed in various ways in structural fashion. If they are considered, they will make valuable contributions to creative ideas.

• Journal of Hydrogen and New Energy
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• v.33 no.1
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• pp.113-120
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• 2022

Quantum dots (QDs) are attractive photosensitizer candidates for application not only in solar cells but also in solar hydrogen generation. For the prepartion of highly efficient QD-sensitized photoelectrodes, it is important to reduce electron recombination at the photoanode/electrolyte interface. Here, we study on the coating condition of ZnS passivation layers on the photoanodes in QD-sensitized solar cells (QDSCs). The ZnS passivation layers are coated by successive ionic layer adsorption and reaction method, and as the cation precursor, zinc acetate and zinc nitrate are empolyed. Due to the higher pH of cation precursor solution, the ZnS loading is improved when the zinc acetate is used, compared to the zinc nitrate. This improved loading of ZnS leads to the reduced electron recombination at the surface of photoanodes and the enhaced conversion efficiency of QDSCs from 6.07% to 7.45%.

• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Progress in Medical Physics
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• v.25 no.1
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• pp.46-52
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• 2014

Liquid ionization chamber is filled with liquid equivalent material unlike air filled ionization chamber. The high density material allow very small-volume chamber to be constructed that still have a sufficiently high sensitivity. However liquid ionization chamber should be considered for both initial recombination and general recombination. We, therefore, studied using the Co-60 beam as the continuous beam and the microLion chamber (PTW) for comparing the ion collection efficiency by Greening theory, two-dose rate method and our experiment method. The measurements were carried out using Theratron 780 as the cobalt machine and water phantom and 0.6 cc Farmer type ionization chamber was used with microLion chamber in same condition for measuring the charge of microLion chamber according to the dose rates. Dose rate was in 0.125~0.746 Gy/min and voltages applied to the microLion chamber were +400, +600 and +800 V. As the result, the collection efficiency by three method was generally less than 1%. In particular, our experimental collection efficiency was in good agreement within 0.3% with Greening theory except the lowest two dose rates. The collection efficiency by two-dose rate method also agreed with Greening theory generally less than 1%, but the difference was about 4% when the difference of two dose rates were lower. The ion recombination correction factors by Greening theory, two-dose rate method and our experiment were 1.0233, 1.0239 and 1.0316, respectively, in SSD 80 cm, depth 5 cm recommended by TRS-398 protocol. Therefore we confirmed that the loss by ion recombination was about 3% in this condition. We think that our experiment method for ion recombination correction will be useful tool for radiation dosimetry in continuous beam.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.117-123
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• 1998

We investigated the effect of mechanical backside damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photo-acoustic displacement values increased proportionally, and it was at Grade 1: Grade 2:Grade 3 = 1:19.6:41 that the normalized relative quantization ratio of excess photo-acoustic displacement in damaged wafer was calculated, which are normalized to the excess PAD from sample Grade 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.408-413
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• 1995

We investigated the effect of mechanical backside damage upon minority carrier recombination lifetime measurement in Czochralski silicon substrate by laser excitation/microwave reflection photoconductance decay method. The intensity of mechanical damage was evaluated by X-ray double crystal rocking curve, X-ray section topography and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the threshold full width at half maximum value which affect minority carrier lifetime measurement is about 13 secs.

• Proceedings of the Korean Society of Plant Pathology Conference
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• 1995.06b
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• pp.21-25
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• 1995

;Bacterial blight caused by Xanthomonas oryzae pv. Olyzae is one of the most important diseases of rice. Host resistance, which relies on single, dominant resistance genes, is the only reliable method to control the disease at present. Pathogenic variation of the bacteria has been shown to follow the deployment of resistance genes in commercial cultivars. Information on the factors and the mechanisms for genetic variation of this pathogen is limited. Further, we have no clear evidence of whether population variability is due to sexual recombination or to variation introduced by mutations or intragenic recombination in a clonally maintained population.(omitted)itted)