• 한국세라믹학회지
• /
• 제52권3호
• /
• pp.173-179
• /
• 2015

We report the facile synthesis of graphene-$CdLa_2S_4$ composite through a facile solvothermal method at low temperature. The as-prepared products were characterized by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis and BET analysis, revealing the uniform covering of the graphene nanosheet with $CdLa_2S_4$ nanocrystals. The as-prepared samples show a higher efficiency for the photocatalytic degradation of typical MB dye compared with P25 and $CdLa_2S_4$ bulk nanoparticles. The enhancement of visible-light-responsive photocatalytic properties by decolorization of Rh.B dye may be attributed to the following causes. Firstly, graphene nanosheet is capable of accepting, transporting and storing electrons, and thus retarding or hindering the recombination of the electrons with the holes remaining on the excited $CdLa_2S_4$ nanoparticles. Secondly, graphene nanosheet can increase the adsorption of pollutants. The final cause is that their extended light absorption range. This work not only offers a simple way to synthesize graphene-based composites via a one-step process at low temperature but also a path to obtain efficient functional materials for environmental purification and other applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
• /
• pp.67-70
• /
• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• Bulletin of the Korean Chemical Society
• /
• 제33권6호
• /
• pp.1895-1899
• /
• 2012

$SiO_2$-coated $TiO_2$ composite materials with enhanced photocatalytic activity under UV light was prepared by a simple catalytic hydrolysis method. XRD, TEM, UV-vis spectroscopy, Photoluminescence, FT-IR and XP spectra were used to characterize the prepared samples. The obvious shell-core structure was shown for obtained $SiO_2$@$TiO_2$ sample. The average thickness of the $SiO_2$ coating layer was 2-3 nm. The interaction between $SiO_2$ and $TiO_2$ restrained the recombination of excited electrons and holes. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under UV light. The photocatalytic activity of $SiO_2$@$TiO_2$ was much higher than that of P25 and mechanical mixing sample $SiO_2/TiO_2$. The possible mechanism for the photocatalysis was proposed.

• Bulletin of the Korean Chemical Society
• /
• 제33권7호
• /
• pp.2133-2139
• /
• 2012

A new system using $TiO_2$ (nano-sized, band-gap 3.14 eV)-impregnated spherical ZnS (micro-sized, band-gap 2.73 eV) nano/micro-composites (Ti 0.001, 0.005, 0.01, and 0.05 mol %/ZnS) was developed to enhance the production of hydrogen from methanol/water splitting. The ZnS particles in a spherical morphology with a diameter of about 2-4 mm which can absorb around 455 nm were prepared by hydrothermal method. This material was used as a photocatalyst with loading by nano-sized $TiO_2$ (20-30 nm) for hydrogen production. The evolution of $H_2$ from methanol/water (1:1) photo splitting over the $TiO_2$/ZnS composite in the liquid system was enhanced, compared with that over pure $TiO_2$ and ZnS. In particular, 1.2 mmol of $H_2$ gas was produced after 12 h when 0.005 mol % $TiO_2$/ZnS nano/micro-composite was used. On the basis of cyclic voltammeter (CV) and UV-visible spectrums results, the high photoactivity was attributed to the larger band gap and the lower LUMO in the $TiO_2$/ZnS composite, due to the decreased recombination between the excited electrons and holes.

• 전기학회논문지
• /
• 제60권11호
• /
• pp.2097-2102
• /
• 2011

Discharge analysis technique for dielectric liquid was presented by using the Finite Element Analysis (FEA) under a lightning impulse incorporating two-phase flow phenomena which described gas and liquid phases in discharge space. Until now, the response of step voltage has been extensively explored, but that of lightning impulse voltage was rarely viewed in the literature. We, therefore, developed an analyzing technique for dielectric liquid in a tip-sphere electrode stressed by a high electric field. To capture the bubble phase, the Heaviside function was introduced mathematically and the material functions for the ionization, dissociation, recombination, and attachment were defined in liquid and bubble, respectively. By using this numerical setup, the molecular dissociation and ionization mechanisms were tested under low and high electric fields resulted from the lightning impulse voltage of 1.2/50 ${\mu}s$. To verify our numerical results, the velocity of electric field wave was measured and compared to the previous experimental results which can be viewed in many papers. Those results had good agreement with each other.

• 한국전기전자재료학회논문지
• /
• 제29권6호
• /
• pp.321-326
• /
• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
• /
• pp.50-53
• /
• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• 태양에너지
• /
• 제20권1호
• /
• pp.11-20
• /
• 2000

To get more insight into the buffering effects of the p-${\mu}c$-Si:H Inserted at the p-a-SiC:H/i-a-Si:H interface, we present a systematic numerical simulation using Gummel-Schafetter method. The reduced recombination loss at the p/i interface due to a constant bandgap buffer is analysed in terms of the variation of the p/i Interface region with a short lifetime and the characterisitics of the buffer such as mobility bandgap, acceptor concentration, and D-state density. The numerical modeling on the constant bandgap buffer demonstrates clearly that the buffering effects of the thin p-${\mu}c$-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface.

• 한국재료학회지
• /
• 제31권10호
• /
• pp.586-591
• /
• 2021

This paper proposes a mathematical model that can calculate the luminescence characteristics driven by alternating current (AC) power using the current-voltage-luminance (I-V-L) properties of organic light emitting devices (OLED) driven by direct current power. Fluorescent OLEDs are manufactured to verify the model, and I-V-L characteristics driven by DC and AC are measured. The current efficiency of DC driven OLED can be divided into three sections. Region 1 is a section where the recombination efficiency increases as the carrier reaches the emission layer in proportion to the increase of the DC voltage. Region 2 is a section in which the maximum luminous efficiency is stably maintained. Region 3 is a section where the luminous efficiency decreases due to excess carriers. Therefore, the fitting equation is derived by dividing the current density and luminance of the DC driven OLED into three regions, and the current density and luminance of the AC driven OLED are calculated from the fitting equation. As a result, the measured and calculated values of the AC driving I-V-L characteristics show deviations of 4.7% for current density, 2.9 % for luminance, and 1.9 % for luminous efficiency.

• Nuclear Engineering and Technology
• /
• 제56권4호
• /
• pp.1480-1489
• /
• 2024

Displacement cascade behaviors of Ti-6Al-4V alloys are investigated using molecular dynamics (MD) simulation. The embedded atom method (EAM) potential including Ti, Al and V elements is modified by adding Ziegler-Biersack-Littmark (ZBL) potential to describe the short-range interaction among different atoms. The time evolution of displacement cascades at the atomic scale is quantitatively evaluated with the energy of primary knock-on atom (PKA) ranging from 0.5 keV to 15 keV, and that for pure Ti is also computed as a comparison. The effects of temperature and incident direction of PKA are studied in detail. The results show that the temperature reduces the number of surviving Frenkel pairs (FPs), and the incident direction of PKA shows little correlation with them. Furthermore, the increasing temperature promotes the point defects to form clusters but reduces the number of defects due to the accelerated recombination of vacancies and interstitial atoms at relatively high temperature. The cluster fractions of interstitials and vacancies both increase with the PKA energy, whereas the increase of interstitial cluster is slightly larger due to their higher mobility. Compared to pure Ti, the presence of Al and V is beneficial to the formation of interstitial clusters and indirectly hinders the production of vacancy clusters.