• The Plant Pathology Journal
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• 제16권1호
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• pp.1-8
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• 2000

Worldwide, rice blast, caused by Magnaporthe grisea (Hebert) Barr. (anamorph, Pyricularia grisea Sacc.), is one of the most economically devastating crop diseases. Management of rice blast through the breeding of blast-resistant varieties has had only limited xuccess due to the frequent breakdown of resistance under field conditions (Bonman etal., 1992; Correa-Victoria and Zeigler, 1991; Kiyosawa, 1982). The frequent variation of race in pathogen populations has been proposed as the principal mechanism involved in the loss of resistance (Ou, 1980). Although it is generally accepted that race change in M. grisea occurs in nature, the degree of its variability has been a controversial subject. A number of studies have reported the appearance of new races at extremely high rates (Giatgong and Frederiksen, 1968; Ou and Ayad, 1968; Ou et al., 1970; Ou et al., 1971). Various potential mechanisms, including heterokaryosis (Suzuki, 1965), parasexual recombination (Genovesi and Magill, 1976), and aneuploidy (Kameswar Row et al., 1985; Ou, 1980), have been proposed to explain frequent race changes. In contrast, other studies have shown that although race change could occur, its frequency was much lower than that predicted by earlier studies (Bonman et al., 1987; Latterell and Rossi, 1986; Marchetti et al., 1976). Although questions about the frequency of race changes in M. grisea remain unanswered, the application of molecular genetic tools to study the fungus, ranging from its genes controlling host specificity to its population sturctures and dynamics, have begun to provide new insights into the potential mechanisms underlying race variation. In this review we aim to provide an overview on (a) the molecular basis of host specificity of M. grisea, (b) the population structure and dynamics of rice pathogens, and (c) the nature and mechanisms of genetic changes underpinning virulence variation in M. grisea.

• 한국진공학회지
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• 제22권3호
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• pp.168-173
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• 2013

본 연구에서는 기존의 상업용 태양전지에서 전자-정공 재결합을 최소화하여 태양전지의 효율을 향상시키는 부가장치인 전자전달증대기(Electron Relay Enhancer: ERE)를 소개한다. 전자전달증대기는 교류 전력 공급 장치와 연결된 두 개의 캐패시터와 전자의 흐름 방향을 제어하는 브릿지 다이오드 시스템으로 구성되어 있다. 두 개의 캐패시터는 브릿지 다이오드 시스템을 통하여 태양전지로부터 전자를 포집하고 포집된 전자를 로드저항이나 인버터쪽으로 펌핑하는 것을 반복한다. 양으로 대전된 한 개의 캐패시터가 전자를 포집하는 동안 음으로 대전된 다른 캐패시터는 전자를 펌핑한다. 태양전지에서 여기된 전자가 정공에 재결합되기 전에 양으로 대전된 캐패시터는 태양전지로부터 더 많은 여기된 전자를 끌어온다. 이러한 까닭에 ERE 시스템은 태양전지의 효율을 증대시킨다. 연구결과로 ERE 활성 시 태양전지의 증가된 전력은 각각의 실험조건에서 5.9 W에서 25.6 W사이였고, 가장 높은 태양전지전력증가율은 ERE 비활성 시 태양전지 전력의 30.8%였다.

• Journal of Plant Biotechnology
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• 제37권1호
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• pp.77-83
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• 2010

국립원예특작과학원에서 분양받은 토마토 18계통을 공시하여 재분화가 잘되는 적정 품종을 탐색한 결과, 계통번호 2001-58에서의 재분화율이 93%로 양호하였다. 또한 식물체로의 재분화 과정에서 보여 지는 갈변현상과 phenolic compound에 의한 식물조직의 괴사현상을 막기 위하여 항산화제인 ascorbic acid와 cystein을 단용 또는 혼용으로 첨가한 후 토마토 재분화에 미치는 영향을 살펴 본 결과, ascorbic acid $200{\sim}300\;{\mu}M/L$ 처리구에서 줄기형성율 및 생체중이 증가되는 현상을 관찰할 수 있었다. 토마토 엽록체 형질전환체 선발을 위해 spectinomycin의 적정 농도를 살펴본 결과, 재분화배지에 spectinomycin 20~25 mg/L 농도가 첨가되어진 처리구에서 재분화가 거의 이루어지지 않았다. 토마토 엽록체 형질전환을 위해 토마토 엽록체 게놈 일부를 분리하여 염기서열을 분석하여 담배와 비교 분석한 결과, homology가 매우 높음을 알 수 있었다. Homologous recombination에 의한 엽록체 형질전환이 되기 위해서 분리한 토마토 엽록체 게놈 일부를 border sequence로 이용하였고, transient assay를 위해 GFP 유전자가 포함된 토마토 엽록체 형질전환용 운반체 pKRT22-AG를 제작하였다. Bombardment을 한 후 원형질체를 나출하여 공초점 현미경하에서 관찰한 결과 엽록체 내에서만 GFP가 발현됨을 알 수 있었으며, DNA 농도 $1\;{\mu}g$, $0.6\;{\mu}m$ gold particle 1 mg, target distance 9 cm 조건이 가장 좋았다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.181-181
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• 2016

Hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films have attracted much attention as materials of the bottom-cells in Si thin film tandem photovoltaics due to their low bandgap and excellent stability against light soaking. However, in PECVD, the source gas $SiH_4$ must be highly diluted by $H_2$, which eventually results in low deposition rate. Moreover, it is known that high-rate ${\mu}c-Si:H$ growth is usually accompanied by a large number of dangling-bond (DB) defects in the resulting films, which act as recombination centers for photoexcited carriers, leading to a deterioration in the device performance. During film deposition, Si nanoparticles generated in $SiH_4$ discharges can be incorporated into films, and such incorporation may have effects on film properties depending on the size, structure, and volume fraction of nanoparticles incorporated into films. Here we report experimental results on the effects of nonoparticles incorporation at the different substrate temperature studied using a multi-hollow discharge plasma CVD method in which such incorporation can be significantly suppressed in upstream region by setting the gas flow velocity high enough to drive nanoparticles toward the downstream region. All experiments were performed with the multi-hollow discharge plasma CVD reactor at RT, 100, and $250^{\circ}C$, respectively. The gas flow rate ratio of $SiH_4$ to $H_2$ was 0.997. The total gas pressure P was kept at 2 Torr. The discharge frequency and power were 60 MHz, 180 W, respectively. Crystallinity Xc of resulting films was evaluated using Raman spectra. The defect densities of the films were measured with electron spin resonance (ESR). The defect density of fims deposited in the downstream region (with nonoparticles) is higher defect density than that in the upstream region (without nanoparticles) at low substrate temperature of RT and $100^{\circ}C$. This result indicates that nanoparticle incorporation can change considerably their film properties depending on the substrate temperature.

• 미생물학회지
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• 제28권2호
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• pp.98-103
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• 1990

원형질체 융합에 사용할 genetic selection marker로써 자외선 조사와 NTG 처리에 의해 Brevibacteriurn lactofermeηturn S SWA(arg trp)와 B. lactofermenturn SWB(met ser)를 분리하였다. 이 균주릎 배양하여 증식기에 penicillin G를 처리한 후, 0.4 M sucrose를 첨가한 lysis fluid에서 lysozyme을 $400\mu\textrm{g}$/ml의 농도로 16시간 처리 하였을 때, B. lactofermenturn SWA는 99.98%, B. lactofermentum SWB는 99.93%의 원형질체 형성률을 나타내었다. 윈형질체 융합에서는 100 mM $CaCl_{2}$, 30%의 PEG 6,000과 fusion fluid릎 15분간 처리하였을때, B. lactofermentum SWA와 B. lactofermentum SWB의 융합빈도는 $2.30\times 10^{-5}$로 나타내었다. 원형질체 융합에 의해 언어진 융합균주의 유전적 분석을 위해 selective media와 non-selective media에서 생장한 colony를 계산함으로써 각 marker간의 재조합주의 형성빈도를 조사하였으며, 이들을 분석하여 유전자간의 순서를 결정하였다.

• Asian Pacific Journal of Cancer Prevention
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• 제15권23호
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• pp.10225-10229
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• 2015

Genetic polymorphisms in homologous recombination repair genes cause an abnormal development of cancerous cells. In the present study we evaluated the possibility of breast cancer association with single nucleotide polymorphisms of RAD51, XRCC2 and XRCC3 genes. Polymorphisms selected in this study were RAD51 135G/C, XRCC2 Arg188His; and XRCC3 Thr241Met. Each polymorphism was genotyped using Polymerase chain reaction-restriction fragment length polymorphism in study cohort of 306 females (156 breast cancer patients and 150 controls). We observed that heterozygous variant genotype (GC) of RAD51 135 G/C polymorphism was associated with a significantly (OR=2.70; 95%CI (0.63-1.79); p<0.03) increased risk of breast cancer. In case of the XRCC3 gene we observed that frequency of heterozygous (OR=2.88; 95%CI (1.02-8.14); p<0.02) and homozygous (OR=1.46; 95%CI (0.89-2.40); p<0.04) genotype of Thr241Met polymorphism were significantly higher in breast cancer patients. For the Arg188His polymorphism of XRCC2, ~2fold increase in breast cancer risk (OR=1.6, 95%CI = 0.73-3.50) was associated with GA genotype with a p value for trend of 0.03. Our results suggest that the 135G/C polymorphism of the RAD51, Thr241Met polymorphism of XRCC3 and Arg188His polymorphism of XRCC2 can be independent markers of breast cancer risk in Pakistan.

• 한국재료학회지
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• 제8권7호
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• pp.591-595
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• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.

• 한국환경과학회지
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• 제16권4호
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• pp.393-397
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• 2007

The sonolytic decomposition of NHCs(Nitrogen Heterocyclic Compounds), such as atrazine[6-chloro-N-ethyl-N'-(1-methylethyl)-1,3,5-triazine-2,4-diamine], simazine(6-chloro-N,N'-diethyl-1,3,5-triazine-2,4-diamine), trietazine(6-chloro-N,N,N'-triethyl-1,3, 5-triazine-2,4-diamine), in water was investigated at a ultrasound frequency of 200kHz with an acoustic intensity of 200W under argon and air atmospheres. The concentration of NHCs decreased with irradiation, indicating pseudo-first-order kinetics. The rates were in the range $1.06{\sim}2.07({\times}10^{-2}min^{-1})$ under air and $1.30{\sim}2.59({\times}10^{-2}min^{-1})$ under argon at a concentration of $200{\mu}M$ of NHCs. The rate of hydroxyl radicals(${\bullet}{OH}$) formation from water is $19.8{\mu}M\;min^{-1}$ under argon and $14.7{\mu}M\;min^{-1}$ under air in the same sonolysis conditions. The sonolysis of NHCs is effectively inhibited, but not completely, by the addition of t-BuOH(2-methyl-2-propanol), which is known to be an efficient ${\bullet}{OH}$ radical scavenger in aqueous sonolysis. This suggests that the main decomposition of NHCs proceeds via reaction with ${\bullet}{OH}$ radical; a thermal reaction also occurs, although its contribution is small. The addition of appropriate amounts of Fenton's reagent $[Fe^{2+}]$ accelerates the decomposition. This is probably due to the regeneration of ${\bullet}{OH}$ radicals from hydrogen peroxide, which would be formed from recombination of ${\bullet}{OH}$ radicals and which may contribute a little to the decomposition.

• 한국환경과학회:학술대회논문집
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• 한국환경과학회 2003년도 International Symposium on Clean Environment
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• pp.171-176
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• 2003

The sonolytic decomposition of NHCs, such as atrazine［6-chloro-N-ethyl-N＇ -(1-methylethyl)-1,3,5-triazine-2,4-diamine］, simazine( 6-chloro-N,N＇ -diethyl-l ,3,5-triazine-2,4-diamine), trietazine(6-chloro-N,N,N＇-triethyl-l,3,5-triazine-2,4-diamine), in water was investigated at a ultrasound frequency of 200kHz with an acoustic intensity of 200W under argon and air atmospheres. The concentration of NHCs decreased with irradiation, indicating pseudo-first-order kinetics. The rates were in the range 1.06∼2.07 (x10/sup -3/ min/sup -1/) under air and 1.30∼2.59(x10/sup -3/ min/sup -1/)under argon at a concentration of 200μM of NHCs. The rate of hydroxyl radicals(·OH) formation from water is 19.8μM min/sup -1/ under argon and 14.7 μM min/sup -1/ under air in the same sonolysis conditions. The sonolysis of NHCs is effectively inhibited, but not completely, by the addition of t-BuOH(2-methyl-2-propanol), which is known to be an efficient ·OH radical scavenger in aqueous sonolysis. This suggests that the main decomposition of NHCs proceeds via reaction with ·OH radical; a thermal reaction also occurs, although its contribution is small. The addition of appropriate amounts of Fenton's reagent ［Fe/sup 2＋/］ accelerates the decomposition. This is probably due to the regeneration of ·OH radicals from hydrogen peroxide, which would be formed from recombination of ·OH radicals and which may contribute a little to the decomposition.

• 한국태양에너지학회 논문집
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• 제33권2호
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.