• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4063-4068
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• 2012

Oxide substrates in semiconductor-sensitized solar cells (SSSCs) have a great impact on their performance. $TiO_2$ has long been utilized as an oxide substrate, and other alternatives such as ZnO and $SnO_2$ have also been explored due to their superior physical properties over $TiO_2$. In the development of high-performance SSSCs, it is of significant importance to understand the effect of oxides on the electron injection and charge recombination as these two are major factors in dictating solar cell performance. In addition, elucidating the relationship between these two critical processes and solar cell performance in each oxide is critical in building up the basic foundation of SSSCs. In this study, ultrafast pump-probe laser spectroscopy and open-circuit decay analysis were conducted to examine the characteristics of three representative oxides ($TiO_2$, ZnO, and $SnO_2$) in terms of electron injection kinetics and charge recombination, and the implication of results is discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.113-119
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• 2003

We report the electrical properties of copper(II)-phthalocyanine(Cu-Pc) as a hole injaction layer in organic light-emitting diode (OLED). OLEDs were constructed by the following material structure : indium tin oxaide (ITO)/ CuPc/ triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/4-(Dicyanomethlene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/ Al. we observed that the change of recombination zone by using a DCM detection thin layer (6 ${\AA}$) in a Alq$_3$ emitting layer. layer. Recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of cupc layer increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.512-515
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• 2009

We have fabricated blue phosphorescent organic light emitting diodes (PHOLEDs) using a 3,5'-N,N'-dicarbazole-benzene (mCP) host and iridium (III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$] picolinate (Flrpic) guest materials, The Flrpic was partially doped into the mCP host layer, for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs. The recombination of electrons and holes takes place inside the mCP layer adjacent to the mCP/hole blocking layer interface. The best current efficiency was obtained in a device with an emission layer structure of mCP (10 nm)/mCP:Flrpic (20 nm, 10%). The high current efficiency in this device was attributed to the confinement of Ffrpic triplet excitons by the undoped mCP layer with high triplet energy, which blocks diffusion of Ffrpic excitons to the adjacent hole transport layer with a lower triplet energy.

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1065-1073
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• 1996

The dissociative recombination of O2+(v+)＋e-→O(1S)＋O(1D) has been theoretically investigated using the multichannel quantum defect theory (MQDT). Cross sections and rate coefficients at various electron energies are calculated. The resonant structures in cross section profile, which are hardly measurable in experiments, are also determined and the existence of Rydberg states is found to affect the rates. The theoretical rate coefficients are computed to be smaller than experimental ones. The reasons for this difference are explained. The two-step MQDT procedure is found to be very useful and promising in calculating the state-to-state rates of the dissociative recombination reaction which is a very important and frequently found phenomenon in Earth's ionosphere.

• Journal of Magnetics
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• v.6 no.2
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• pp.61-65
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• 2001

The Hopkinson effect in the HDDR-treated $Nd_{15}Fe_{77}B_8$ allay was examined in detail by means of a thermo-magnetic analysis with low magnetic field (600 Oe). The emergence and magnitude of maximum in magnetisation in the thermomagnetic curve due to the Hopkinson effect was correlated with the grain structure and coercivity of the HDDR-treated material. The HDDR-treated materials showed a clear Hopkinson effect (maximum in magnetisation just below the Curie temperature of the $Nd_2Fe_{14}B\;$ phase) on heating. The magnitude of the magnetisation rise due to the Hopkinson effect became smaller as the recombination time increased. The magnetisation recovery at room temperature on cooling from above the Curie temperature became smaller as the recombination time increased. The HDDR-treated materials with shorter recombination time, finer grain size and higher coercivity showed larger magnetisation maximum due to the Hopkinson effect in the thermo-magnetic curve.

• Korean Journal of Microbiology
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• v.39 no.3
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• pp.128-134
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• 2003

Transformation-associated recombination (TAR) cloning is based on co-penetration into yeast spheroplasts of genomic DNA along with TAR vector DNA that contains 5'- and 3'-sequences (hooks) specific for a gene of interest, followed by recombination between the vector and the human genomic DNA to establish a circular YAC. Typically, the frequency of recombinant insert capture is 0.01-1% for single-copy genes by TAR cloning. To further refine the TAR cloning technology, we determined the effect of GC content on target hooks required for gene isolation utilizing the $Tg\cdot\AC$ mouse transgene as the targeted region. For this purpose, a set of vectors containing a B1 repeated hook and Tg AC-specific hooks of variable GC content (from 18 to 45%) was constructed and checked for efficiency of transgene isolation by radial TAR cloning. Efficiency of cloning decreased approximately 2-fold when the TAR vector contained a hook with a GC content ～${\leq}23$% versus ～40%. Thus, the optimal GC content of hook sequences required for gene isolation by TAR is approximately 40%. We also analyzed how the distribution of high GC content (65%) within the hook affects gene capture, but no dramatic differences for gene capturing were observed.

• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.155-159
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• 1997

We investigated the effect of mechanical backside damage in Czochralski silicon wafer. The intensity of mechanical damage were evaluated by minority carrier recombination lifetime by a laser excitation/microwave reflection photoconductance decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photoacoustic displacement values are also increased proportionally.

• Genomics & Informatics
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• v.9 no.3
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• pp.138-141
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• 2011

Here, we report a computer program written in Python, which phases SNP genotypes and infers inherited deletions based on the pattern of Mendelian inheritance within a trio pedigree. When tiered trio genotypes that encompass three generations are available, it narrows a recombination event down to a region between two consecutive heterozygous markers. In addition, the phase information that is inferred from the upper trio that is formed by one of the parents and grandparents can be propagated to phase the genotypes of the lower trio that is formed by the parents and an offspring.