• 제목/요약/키워드: Readout circuit

검색결과 82건 처리시간 0.029초

등가회로 모델에 의한 레이저다이오드의 누설전류 해석 (Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model)

  • 최영규;김기래
    • 한국정보통신학회논문지
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    • 제11권2호
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    • pp.330-336
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    • 2007
  • 본 논문에서는 디지털 의료 영상 및 진단 분야 그리고 산업용으로도 활용 가능한 싱글 포톤 계수형 영상센서를 $0.18{\mu}m$ triple-well CMOS(Complementary Metal Oxide Semiconductor) 공정을 사용하여 설계하였다. 설계된 Readout 칩용 싱글 픽셀은 디지털 X-ray 이미지 센서모듈을 간단화 하기 위해 단일 전원전압을 사용하였으며, Preamplifier의 출력 전압인 signal voltage(${\Delta}Vs$)를 크게 하기 위해 Folded Cascode CMOS OP amp를 이용한 Preamplifier를 설계하였으며, 기존의 Readout 칩 외부에서 인가하던 threshold voltage를 Readout 칩 내부에서 생성해 줄 수 있도록 Externally Tunable Threshold Voltage Generator 회로를 새롭게 제안하였다. 그리고, Photo Diode에서 발생하는 Dark Current Noise를 제거하기 위한 Dark Current Compensation 회로를 제안하였으며, 고속 counting이 가능하고, layout 면적이 작은 15bit LFSR(Linear Feedback Shift Resister) Counter를 설계하였다.

선형 종ㆍ원적외선 이중대역 동시 검출기배열을 위한 신호취득회로의 설계 (Design of readout circuit for linear two-color infrared detector array)

  • 김철범;우두형;강상구;이희철
    • 대한전자공학회논문지SD
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    • 제41권9호
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    • pp.49-56
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    • 2004
  • HgCdTe 64×2 중원적외선 이중대역 동시검출기를 위한 포화전류차단 회로를 갖는 BDI입력방식의 신호취득회로(ROIC)를 설계하였다. 제안된 포화차단 회로를 통해서 중적외선 신호가 포화되면 원적외선 신호도 왜곡이 일어나던 기존의 문제점을 해결함으로써 120k정도 더 넓은 온도 영역의 물체까지 측정할 수 있는 범위를 확보하고 중적외선 검출기에서 발생하는 dead pixel에 의해 원적외선 검출기의 성능은 영향받지 않는 특성을 보였다. 회로 제작에 사용한 공정은 0.Sum 2-poly 3-metal Hynix CMOS 공정이었다. 측정결과 중적외선 신호와 원적외선 신호가 동시에 처리되는 것을 확인할 수 있었다. 또한, 측정된 잡음의 크기는 상온에서 53uV로서 동작온도 77K의 값으로 환산시켜 보았을 때 27uV로 ROIC의 특성이95% BLIP 조건을 만족함을 알 수 있었다.

A Digital Readout IC with Digital Offset Canceller for Capacitive Sensors

  • Lim, Dong-Hyuk;Lee, Sang-Yoon;Choi, Woo-Seok;Park, Jun-Eun;Jeong, Deog-Kyoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권3호
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    • pp.278-285
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    • 2012
  • A digital readout IC for capacitive sensors is presented. Digital capacitance readout circuits suffer from static capacitance of sensors, especially single-ended sensors, and require large passive elements to cancel such DC offset signal. For this reason, to maximize a dynamic range with a small die area, the proposed circuit features digital filters having a coarse and fine compensation steps. Moreover, by employing switched-capacitor circuit for the front-end, correlated double sampling (CDS) technique can be adopted to minimize low-frequency device noise. The proposed circuit targeted 8-kHz signal bandwidth and oversampling ratio (OSR) of 64, thus a $3^{rd}$-order ${\Delta}{\Sigma}$ modulator operating at 1 MH was used for pulse-density-modulated (PDM) output. The proposed IC was designed in a 0.18-${\mu}m$ CMOS mixed-mode process, and occupied $0.86{\times}1.33mm^2$. The measurement results shows suppressed DC power under about -30 dBFS with minimized device flicker noise.

고온초전도 SQUID 신호 검출을 위한 3채널용 FLL 회로 (Integrated 3-Channel Flux-Locked-Loop Electronics for the Readout of High-$T_c$ SQUID)

  • 김진목;김인선;유권규;박용기
    • Progress in Superconductivity
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    • 제5권1호
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    • pp.55-60
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    • 2003
  • We designed and constructed integrated 3-channel flux-locked-loop (FLL) electronic system for the control and readout of high-T$_{c}$ SQUIDs. This system consists of low noise preamplifiers, integrators, interface circuits, and software. FLL operation was carried out with biased signals of 19 KHz modulated current and 150 KHz modulated flux, which are reconstructed as detected signals by preamplifier and demodulator. Computer controlled interface circuits regulate FLL circuit and adjust SQUID parameters to the optimum operating condition. The software regulates interface circuits to make an auto-tuning for the control of SQUIDs, and displays readout data from FLL circuit. 3-channel SQUID electronic system was assembled with 3 FLL-interface circuit boards and a power supply board in the aluminum case of 56 mm ${\times}$ 53 mm${\times}$ 150 mm. Overall noise of the system was around 150 fT/(equation omitted)Hz when measured in the shielded room, 200 fT/(equation omitted)Hz in a weakly shielded room, respectively.y.

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볼로미터형 적외선 센서의 신호처리회로 설계 및 특성 (Design and analysis of a signal readout integrated circuit for the bolometer type infrared detect sensors)

  • 김진수;박민영;노호섭;이승훈;이제원;문성욱;송한정
    • 센서학회지
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    • 제16권6호
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    • pp.475-483
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    • 2007
  • This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.

중적외선 감지용 초점면 배열 HgCdTe의 신호 취득 회로 설계 및 열영상 구현 (ROIC Design of HgCdTe FPA for MWIR detection and Implementation of Thermal Image)

  • 김병혁;이희철;김충기
    • 전자공학회논문지SC
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    • 제37권3호
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    • pp.63-71
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    • 2000
  • 모든 물체에서 방출되는 적외선을 감지하여 영상신호로 만들어 주는 적외선 감지 칩은 보편적으로 적외선감지 소자와 신호 취득 회로가 각기 다른 칩으로 제작되어 하이브리드 본딩 기법을 통해 만들어 진다. 본 논문에서는 신호 취득 회로의 설계 과정과 시뮬레이션 결과를 보여 주며, 실제 제작 결과, 6V의 인가 전압에서 설계 사양에 만족하는 동작 특성을 보임을 확인하였다. 제작된 신호 취득 회로를 이용하여 적외선 감지칩을 제작하고 이를 자체 제작한 열영상 시스템에 장착하여 열영상을 구현해 보았다. 얻어진 열영상은 고온과 상온의 물체에 대해서 인식이 가능한 수준이었으며, 열영상 시스템의 잡음 특성을 좀 더 개선할 경우 더나은 열영상을 얻을 수 있으리라 기대한다.

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X-ray 이미지 센서용 싱글 픽셀 포톤 카운터 설계 (A Design of Single Pixel Photon Counter for Digital X-ray Image Sensor)

  • 백승면;김태호;강형근;전성채;진승오;허영;하판봉;박무훈;김영희
    • 한국정보통신학회논문지
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    • 제11권2호
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    • pp.322-329
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    • 2007
  • 본 논문에서는 디지털 의료 영상 및 진단 분야 그리고 산업용으로도 활용 가능한 싱글 포톤 계수형 영상센서를 $0.18{\mu}m$ triple-well CMOS(Complementary Metal Oxide Semiconductor) 공정을 사용하여 설계하였다. 설계된 Readout 칩용 싱글 픽셀은 디지털 X-ray 이미지 센서모듈을 간단화 하기 위해 단일 전원전압을 사용하였으며, Preamplifier의 출력 전압인 signal voltage(${\Delta}Vs$)를 크게 하기 위해 Folded Cascode CMOS OP amp를 이용한 Preamplifier를 설계하였으며, 기존의 Readout 칩 외부에서 인가하던 threshold voltage를 Readout 칩 내부에서 생성해 줄 수 있도록 Externally Tunable Threshold Voltage Generator 회로를 새롭게 제안하였다. 그리고, Photo Diode에서 발생하는 Dark Current Noise를 제거하기 위한 Dark Current Compensation 회로를 제안하였으며, 고속 counting이 가능하고, layout 면적이 작은 15bit LFSR(Linear Feedback Shift Resister) Counter를 설계하였다.

최근 터치스크린 Readout 시스템의 연구 경향 (Recent Research Trends in Touchscreen Readout Systems)

  • 이준민;함주원;장우석;이하민;구상모;오종민;고승훈
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.423-432
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    • 2023
  • With the increasing demand for mobile devices featuring multi-touch operation, extensive research is being conducted on touch screen panel (TSP) Readout ICs (ROICs) that should possess low power consumption, compact chip size, and immunity to external noise. Therefore, this paper discusses capacitive touch sensors and their readout circuits, and it introduces research trends in various circuit designs that are robust against external noise sources. The recent state-of-the-art TSP ROICs have primarily focused on minimizing the impact of parasitic capacitance (Cp) caused by thin panel thickness. The large Cp can be effectively compensated using an area-efficient current compensator and Current Conveyor (CC), while a display noise reduction scheme utilizing a noise-antenna (NA) electrode significantly improves the signal-to-noise ratio (SNR). Based on these achievements, it is expected that future TSP ROICs will be capable of stable operation with thinner and flexible Touch Screen Panels (TSPs).

Averaging Current Adjustment Technique for Reducing Pixel Resistance Variation in a Bolometer-Type Uncooled Infrared Image Sensor

  • Kim, Sang-Hwan;Choi, Byoung-Soo;Lee, Jimin;Lee, Junwoo;Park, Jae-Hyoun;Lee, Kyoung-Il;Shin, Jang-Kyoo
    • 센서학회지
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    • 제27권6호
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    • pp.357-361
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    • 2018
  • This paper presents an averaging current adjustment technique for reducing the pixel resistance variation in a bolometer-type uncooled infrared image sensor. Each unit pixel was composed of an active pixel, a reference pixel for the averaging current adjustment technique, and a calibration circuit. The reference pixel was integrated with a polysilicon resistor using a standard complementary metal-oxide-semiconductor (CMOS) process, and the active pixel was applied from outside of the chip. The averaging current adjustment technique was designed by using the reference pixel. The entire circuit was implemented on a chip that was composed of a reference pixel array for the averaging current adjustment technique, a calibration circuit, and readout circuits. The proposed reference pixel array for the averaging current adjustment technique, calibration circuit, and readout circuit were designed and fabricated by a $0.35-{\mu}m$ standard CMOS process.

A Polymer-based Capacitive Air Flow Sensor with a Readout IC and a Temperature Sensor

  • Kim, Wonhyo;Lee, Hyugman;Lee, Kook-Nyeong;Kim, Kunnyun
    • 센서학회지
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    • 제28권1호
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    • pp.1-6
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    • 2019
  • This paper presents an air flow sensor (AFS) based on a polymer thin film. This AFS primarily consists of a polymer membrane attached to a metal-patterned glass substrate and a temperature-sensing element composed of NiCr. These two components were integrated on a single glass substrate. The AFS measures changes in capacitance caused by deformation of the polymer membrane based on the air flow and simultaneously detects the temperature of the surrounding environment. A readout integrated circuit (ROIC) was also fabricated for signal processing, and an ROIC chip, 1.8 mm by 1.9 mm in size, was packaged with an AFS in the form of a system-in-package module. The total size of the AFS is 1 by 1 cm, and the diameter and thickness of the circular-shaped polymer membrane are 4 mm and $15{\mu}m$, respectively. The rate of change of the capacitance is approximately 11.2% for air flows ranging between 0 and 40 m/s.