• 한국표면공학회지
• /
• 제32권3호
• /
• pp.336-339
• /
• 1999

Photo-excited $TiO_2$ surface has a strong ability to induce various chemical reactions. Our study concentrates mainly on the utilisation of light energy to induce reactive radicals for environmental protection application. For instance, we have successfully used TiO$_2$ to break down foul smelling substances in air. In order to retain and separate the $TiO_2$ catalyst from the reactants and products, $TiO_2$ was immobilised by fixing onto various substrates. $TiO_2$ catalyst coated onto glass, wall paper and painted panel was found to show significant deodorising effect. The deodorising effect continues as long as$TiO_2$ is exposed to light irradiation.

• 한국세라믹학회지
• /
• 제40권8호
• /
• pp.739-745
• /
• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• 한국산학기술학회논문지
• /
• 제16권12호
• /
• pp.8679-8683
• /
• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

• 한국진공학회지
• /
• 제11권1호
• /
• pp.22-27
• /
• 2002

Reactive sputtering 방법으로 증착된 tungsten nitride ($(WN_x)$) 박막에 대해 $N_2$ 유량비 변화에 따르는 구조, 화학결합, 그리고 비저항 값의 변화를 조사하였다. $(WN_x)$ 박막 증착시 $N_2$ 유량비를 20%, 40%, 60%로 늘려감에 따라 그 구조는 각각 bcc $\beta$-W상, 비정질상, 그리고 fcc W$_2$N상으로 변화하였으며, 비정질상이 형성되었을 때 박막 표면이 가장 평탄하였다. $(WN_x)$ 박막이 공기 중에 노출된 경우, 모든 시료 표면에서 $WO_3$ 산화물이 형성되었으며, $N_2$유량비가 증가할수록 $(WN_x)$ 박막내 N의 조성비가 증가하였고, W $4f_{7/2}$ peak가 높은 binding energy 쪽으로 이동하였다. 하지만 시료표면을 $Ar^+$ 이온으로 etching한 후에는 WNx 박막 표면이 비정질화되기 때문에 N의 조성비가 변화함에도 불구하고 $W4f_{7/2}$ / peak가 거의 변화하지 않았다. 박막의 비저항 값은 $N_2$ 유량비가 증가함에 따라 증가하였다.

• 한국표면공학회지
• /
• 제40권3호
• /
• pp.117-124
• /
• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• 한국염색가공학회지
• /
• 제6권4호
• /
• pp.46-53
• /
• 1994

Polymer cationic agent was prepared by the initial polymerisation of epichlorohydrin followed by amination with diethylamine. Cotton fibre treated with the polymer (6~8% o.w.f.) is highly cationic and exhibit increased substantivity for reactive dyes under neutral to weakly acid conditions. The modified substrate could be dyed with reactive dyes without salt or a little salt from dye bath. The increased concentration of cationic agents resulted in an increase the colour yield. Futhermore, treated cotton has an electropositive surface charge. Adsorption of Reactive dye can be attributed to both van der waals force and electrostatic attraction.

• Journal of electromagnetic engineering and science
• /
• 제19권2호
• /
• pp.71-81
• /
• 2019

This paper presents a design methodology for wideband single-layered microwave absorbers with arbitrary absorption at the design center frequency using reactive Salisbury screens. The bandwidth of the absorber increases when the flatness of the reflection response at the design center frequency is maximized. Based on this observation, closed-form design formulas for wideband absorbers are derived. As they are scalable to any design frequency, wideband reactive screens can be systematically realized using two-dimensional periodic crossed-dipole structures patterned on a resistive sheet. Based on this method, a single-layered absorber with a 90% bandwidth improved to 124% of the design center frequency is presented. For the purpose of physical demonstration, an absorber with a design center frequency of 10 GHz is designed and fabricated using a silver nanowire resistive film with a surface resistance of 30 Ω/square. The measured absorption shows a good agreement with both the calculation and the electromagnetic simulation.

• Bulletin of the Korean Chemical Society
• /
• 제20권10호
• /
• pp.1136-1144
• /
• 1999

The collision-induced reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon (001)-(2×1) surface is studied by use of the classical trajectory approach. The model is based on reaction zone atoms interacting with a finite number of primary system silicon atoms, which then are coupled to the heat bath, i.e., the bulk solid phase. The potential energy of the Hads‥Hgas interaction is the primary driver of the reaction, and in all reactive collisions, there is an efficient flow of energy from this interaction to the Hads-Si bond. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability shows the maximum near 700K as the gas temperature increases, but it is nearly independent of the surface temperature up to 700 K. Over the surface temperature range of 0-700 K and gas temperature range of 300 to 2500 K, the reaction probability lies at about 0.1. The reaction energy available for the product states is small, and most of this energy is carried away by the desorbing H2 in its translational and vibrational motions. The Langevin equation is used to consider energy exchange between the reaction zone and the bulk solid phase.

• 폴리머
• /
• 제24권5호
• /
• pp.579-588
• /
• 2000

보호콜로이드에 따른 입체 안정제 (steric stabilizer)작용이 폴리초산비닐 (poly(vinyl acetate), PVAc) 라텍스의 안정성에 미치는 영향을 조사하였다. 보호콜로이드로서 중합도 1080, 검화도 78.4%인 반응성 poly(vinyl alcohol) mono thiol (PVALT)를 사용한 것이 중합도 1100, 검화도 81.6%인 poly(vinyl alcohol) (PVA)를 사용하는 것보다 PVAc 라텍스의 안정성이 양호하였으며, 반응성 PVALT의 첨가량이 증가할수록 PVAc 라텍스의 안정성은 향상되었다. PVAc 라텍스 입자의 표면 형태 변화는 투과전자 현미경으로 관찰하였다. 입자크기는 반응성 PVALT의 첨가량이 증가할수록 감소하였다. 결과적으로 에멀젼의 중합 시 PVA보다 반응성 PVALT를 사용하는 것이 PVAc 라텍스의 안정성이 양호함을 알 수 있었다. 이는 반응성 PVALT로 인해 PVAc 라텍스 입자계면에 PVA와의 화학 결합을 유도할 수 있는 다량의 티올 (thiol)기가 도입되어 PVAc와 반응성 PVALT간의 화학반응으로 인한 PVALT-b-PVAc 블록 공중합체가 생성됨에 기인하는 것으로 사료된다. 아울러 제타전위는 탄산나트륨의 농도가 증가할수록 감소하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
• /
• pp.90-90
• /
• 1998