• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.892-895
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• 2003

This paper describes on RIE(Reactive Ion Etching) characteristics of 3C-SiC(Silicon Carbide) grown on Si(100) wafers. During RIE of 3C-SiC films in this work, $CHF_3$ gas is used to form of polymer as a side wall for excellent anisotropy etching. From this process, etch rates are obtained a $60{\sim}980{\AA}/min$ by various conditions such as $CHF_3$ gas flux, $O_2$ addition ratio, RF power and electrode distance. Also, approximately $40^{\circ}$ mesa structures are successfully formed at 100 mTorr $CHF_3$ gas flow ratio, 200 W RF power and 30 mm electrode distance. Moreover, vertical side wall is fabricated by anisotropy etching with 50% $O_2$ addition ratio and 25 mm electrode distance. Therefore, RIE of 3C-SiC films using $CHF_3$ could be applicable as fabrication process technology for high-temperature 3C-SiC MEMS applications.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.161-161
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• 1999

In the field of material science, the interests and efforts to modify the surface of materials in agreement with the need of usage have been extensively increasing. he modification to improve the wettability of surface is very important is terms of adhesion, printing, etc. It is very difficult to modify metal surface into hydrophilic one. therefore, surfactant coating has been generally used in many cases. However, surfactant has disadvantages such as environmental problem, soluble in water. in this study, hydrophilic polymer films as alternative of surfactant were deposited on metal substrate by DC plasma polymerization. Hydrophilic polymer films deposited by DC plasma show many merits such as good wettability, stone adhesion to substrate, high resistance to most chemicals. Monomer gas and reactive gas were used as source plasma polymerization. Plasma polymerized films were fabricated with process parameters of deposition time, ratio of gas mixture, current, pressure, etc. Effects of these variables on wettability of plasma polymer films will be discussed. With XPS and FT-IR analyses of plasma polymeric films, the relation between wettability and chemical state of polymer films by DC plasma was investigated.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.1
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• pp.45-54
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• 2009

Reduction reactivity and carbon deposition characteristics of three oxygen carrier particles(OCN01, OCN02, OCN03) have been investigated by using hydrogen, methane, syngas, and natural gas as fuels. For all particles, the maximum conversion, the oxygen transfer capacity, and the degree of carbon deposition increased as the reactive carbon contents increased. The reduction rate and the oxygen transfer rate increased as the moles of required oxygen per input gas increased. The change of maximum conversion, reduction rate, oxygen transfer capacity, oxygen transfer rate and degree of carbon deposition for different fuels can be explained consistently by using parameters such as the reactive carbon contents and the moles of require oxygen per input gas.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.829-833
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• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.262-271
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• 2005

In order to achieve timely and accurate fault detection of plasma etching process, neural network based time series modeling has been applied to reactive ion etching (RIE) using two different in-situ plasma-monitoring sensors called optical emission spectroscopy (OES) and residual gas analyzer (RGA). Four different subsystems of RIE (such as RF power, chamber pressure, and two gas flows) were considered as potential sources of fault, and multiple degrees of faults were tested. OES and RGA data were simultaneously collected while the etching of benzocyclobutene (BCB) in a $SF_6/O_2$ plasma was taking place. To simulate established TSNNs as incipient fault detectors, each TSNN was trained to learn the parameters at t, t+T, ... , and t+4T. This prediction scheme could effectively compensate run-time-delay (RTD) caused by data preprocessing and computation. Satisfying results are presented in this paper, and it turned out that OES is more sensitive to RF power and RGA is to chamber pressure and gas flows. Therefore, the combination of these two sensors is recommended for better fault detection, and they show a potential to the applications of not only incipient fault detection but also incipient real-time diagnosis.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.61-67
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• 2007

The magnetron reactive sputtering was adopted to deposit CuO buffer layers on the polyimide surfaces for increasing the adhesion strength between Cu thin films and polyimide, varying $O_2$ gas flow rate from 1 to 5 sccm. The CuO oxide was formed through all the $O_2$ gas flow rates of 1 to 5 sccm, showing the highest value at the 3 sccm $O_2$ gas flow rate. The XPS analysis revealed that the $Cu_2O$ oxide was also formed with a significant ratio during the reactive sputtering. The adhesion strength is mainly dependent on the amount of CuO in the buffer layers, which can react with C-O-C or C-N bonds on the polyimide surfaces. The adhesion strength of the multi-layered Cu/buffer layer/polyimide specimen decreased linearly as the heating temperature increased to $300^{\circ}C$, even though there showd no significant change in the chemical state at the polyimide interface. This result is attributed to the decrease in surface roughness of deposited copper oxide on the polyimide, when it is heated.

• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.119-124
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• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.283-287
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• 2002

We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.