• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.369-374
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• 2010

This paper presents a numerical investigation of the Deflagration to Detonation Transition (DDT) of flame acceleration by a shock wave in combustible gas mixture. A model consisting of the reactive compressible Navier-Stokes equations is used. The effects of viscosity, thermal conduction, species diffusion, and chemical reactions are included. Using this model, the generation of hot spots by repeated shock and flame interaction in front and back of flame and the change of detonation occurrence by various shock intensities (Ms=1.1, 1.2, 1.3) are studied. The simulations show that as the incident shock intensity increases, the Richtmyer-Meshkov (RM) instability becomes stronger and DDT occurrence time is reduced.

• KSTLE International Journal
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• v.4 no.2
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• pp.56-59
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• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2003.11a
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• pp.78-84
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• 2003

Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a $B_4C$ target with As as processing gas. Various amounts of methane gas $(CH_4)$ were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that $CH_4$ addition to As processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of $CH_4$, gas component from 0 to $1.2\;vol\;\%$. By adding a sufficient amount of $CH_4\;(1.2\%)$ in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.5
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• pp.245-248
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Ni/ITO (INI) multilayer films were deposited on the glass substrates with a reactive magnetron sputtering system without intentional substrate heating and then the influence of the Ni interlayer on the methanol gas sensitivity of ITO and INI film sensors were investigated. Although both ITO and INI film sensors have the same thickness of 100 nm, INI sensors have a sandwich structure of ITO 50 nm/Ni 5 nm/ITO 45 nm. The changes in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm were measured. It is observed that the INI film sensors show the higher sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the INI film sensor have the potential to be used as improved methanol gas sensors.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.151-157
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• 1996

Magnetic properties and microstructures of FeTaNC thin films, which were deposited by magnetron reactive sputtering rrethod, were investigated as a function of $CH_{4}$ and $N_{2}$ gas partial pressures. Magnetic properties of FeTaNC films depended on total reactive gas pressure as well as $CH_{4}/N_{2}$ pressure ratios. For reactive gas partial pressures of 5~10 %, optimum magnetic properties were observed in the FeTaNC films with proper $CH_{4}/N_{2}$ ratio. On the other hand, at 15% of gas partial pressure, FeTaN and FeTaC films showed superior properties to FeTaNC films. Above 15%, the magnetic properties of films rapidly degraded due to an excess incorporation of C and/or N atoms. Excellent soft magnetic properties of 17 kG of Bs, 0.3 Oe of He, and 4000 of $\mu'$(at 5 MHz) were obtained in the FeTaNC films. High permeabilities of FeTaNC films could be explained by the Fe lattice distortion caused by N atoms, hence reduction of magnetic anisotopy. While precipitated TaN and TaC particles effectively supress the growth of $\alpha-Fe$ grains leading to a good soft magentic properties, FeN and FeC phases such as $Fe_3N$, $Fe_4N$, FexC have detrimental effects.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.6
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• pp.75-82
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• 2021

Low-temperature combustion (LTC) strategies, such as HCCI (Homogeneous Charge Compression Ignition), PCCI (Premixed Charge Compression Ignition), and RCCI (Reactivity Controlled Compression Ignition), have been developed to effectively reduce NOx and PM while increasing the thermal efficiency of diesel engines. Through numerical analysis, this study examined the effects of the injection timing and two-stage injection ratio of diesel fuel, a highly reactive fuel, on the performance and exhaust gas of RCCI engines using gasoline as the low reactive fuel and diesel as the highly reactive fuel. In the case of two-stage injection, combustion slows down if the first injection timing is too advanced. The combustion temperature decreases, resulting in lower combustion performance and an increase in HC and CO. The injection timing of approximately -60°ATDC is considered the optimal injection timing considering the combustion performance, exhaust gas, and maximum pressure rise rate. When the second injection timing was changed during the two-stage injection, considering the combustion performance, exhaust gas, and the maximum pressure increase rate, it was judged to be optimal around -30°ATDC. In the case of two-stage injection, the optimal result was obtained when the first injection amount was set to approximately 60%. Finally, a two-stage injection rather than a single injection was considered more effective on the combustion performance and exhaust gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.306.2-306.2
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• 2016

Niobium oxide thin films were synthesized by reactive rf magnetron sputtering. The target was metallic niobium with 2 inch in diameter and the substrate was n-type Si wafer. To control the surface properties of the films, Nb oxide thin films were obtained at various mixing ratios of argon and oxygen gases. Nb oxide thin films were analyzed with alpha step, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The result of alpha step showed that the thickness of Nb oxide thin films were decreased with increasing the oxygen gas ratios. SEM images showed that the granular morphology was formed at 0% of oxygen gas ratio and then disappeared at 20 and 75% of oxygen gas ratio. The amorphous Nb oxide was observed by XRD at all films. The oxidation state of Nb and O were studied with high resolution Ni 2p and O 1s XPS spectra. And the change in the chemical environment of Nb oxide thin films was investigated by XPS with Ar+ sputtering.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.105.1-105.1
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• 2011

To enhance the performance of photovoltaic a-Si:H solar cells with a hybrid-type light absorbing structure of single crystal silicon nanoparticles (Si NPs) in a-Si:H matrix, single crystal Si NPs were produced by laser pyrolysis. The Si NPs were synthesized by $SiH_4$ gas decomposition using a $CO_2$ laser. The properties of Si NPs were controlled by process parameters such as $CO_2$ laser power, reactive gas pressure, and $H_2/SiH_4$ gas flows. The crystalline properties and sizes of Si NPs were analyzed by High Resolution Transmission Electron Microscopy (HRTEM). The sizes of Si NPs were controllable in the range of 5-15 nm in diameter and the effects of process parameters of laser pyrolysis were systematically investigated.