• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.584-584
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• 2012

결정형 실리콘 태양전지 공정 중 표면 texturing 공정은 표면에 요철을 형성시켜 반사되는 빛 손실을 줄여서, 증가된 빛 흡수 양에 의해 단락전류(Isc)를 증가시키는데 그 목적이 있다. 표면 texturing 공정은 습식 식각과 건식 식각에 의한 방법으로 나눌 수 있다. 습식 식각은 KOH, TMAH, HNA 등의 실리콘 식각 용액을 사용하여 공정상의 위험도가 크고, 사용 후 용액의 폐기물에 의한 환경오염 문제가 있다. 건식 식각은 습식 식각과 달리 폐기물의 처리가 없고 미량의 가스를 이용한다. 그리고 다결정 실리콘 웨이퍼처럼 불규칙적인 결정방향에도 영향을 받지 않는 장점을 가지고 있어서 건식 식각을 이용한 표면 texturing 공정에 관한 많은 연구가 진행되고 있으며, 특히 RIE(reactive ion etching)를 이용한 태양전지 texturing 공정이 가장 주목을 받고 있다. 하지만 기존의 RIE를 이용하여 표면 texturing 공정을 하게 되면 500 nm 이하의 needle-like 구조의 표면이 만들어진다. Needle-like 구조의 표면은 전극을 형성할 때에 접촉 면적이 좁기 때문에 adhesion이 좋지 않은 것과 단파장 대역에서 광 손실이 많다는 단점이 있다. 본 논문에서는 기존의 RIE texturing의 단점을 보완하기 위해 챔버 내부에 metal-mesh를 장착한 후 RIE를 이용하여 $1{\mu}m$의 피라미드 구조를 형성하였고, RIE 공정 시 ion bombardment에 의한 표면 손상을 제거(RIE damage remove etching)하기 위하여 10초간 TMAH(Tetramethyl -ammonium hydroxide, 25 %) 식각 공정을 하였다.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.1-5
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• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.6-12
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• 2000

In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.

• ETRI Journal
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• v.24 no.3
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• pp.211-220
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• 2002

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3/CF_4$ gas chemistry. We use a statistical $2^{4-1}$ experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of $SiO_2$ mainly depends on F density and ion bombardment. $SiO_2$ etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 $CF_4$ flow ratio and a -600 V to -650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the $CF_4$ flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a $CHF_3/CF_4$ MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.198-201
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• 2006

In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1658-1665
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• 1989

Reactor design considerations over several critical parameters for a planar type reactive ion etcher are given. The etch uniformity is taken as a principal design constraint. The characteristics of economicaly available vacuum pumping system are taken as practical design constraints. A set of theoretical conditions on the chamber geometry and on the gas delivery and vacuum system, that satisfy the design constraints, are derived from basic properties of RF glow discharge and gas dynamics. The theoretical results are applied to decide design parameters of a practical single-wafer-per-chamber planar type reactive ion etching machine.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.30.1-30.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.108-108
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• 2003

• Transactions of Materials Processing
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• v.14 no.5 s.77
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• pp.473-476
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• 2005

The demand of on-chip total analyzing system with MEMS (micro electro mechanical system) bio/chemical sensor is rapidly increasing. In on-chip total analyzing system, to detect the bio/chemical products with submicron feature size, a filtration system with nano-filter is required. One of the conventional methods to fabricate nano-filter is to use direct patterning or RIE (reactive ion etching). However, those procedures are very costly and are not suitable fur mass production. In this study, we suggested new fabrication method for a nano-filter based on replication process, which is simple and low cost process. After the Si master was fabricated by laser interference lithography and reactive ion etching process, the polymeric mold was replicated by UV-imprint process. Metallic nano-filter was fabricated after removing the polymeric part of metal deposited polymeric mold. Finally, our fabrication method was applied to metallic nano-filter with $1{\mu}m$ pitch size and $0.4{\mu}m$ hole size for bacteria sensor application.