• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.237-240
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• 2005

The demand of micro electrical mechanical system (MEMS) bio/chemical sensor is rapidly increasing. To prevent the contamination of sensing area, a filtration system is required in on-chip total analyzing MEMS bio/chemical sensor. A nano-filter was mainly applied in some application detecting submicron feature size bio/chemical products such as bacteria, fungi and so on. We suggested a simple nano-filter fabrication process based on replication process. The mother pattern was fabricated by holographic lithography and reactive ion etching process, and the replication process was carried out using polymer mold and UV-imprinting process. Finally the nano-filter is obtained after removing the replicated part of metal deposited replica. In this study, as a practical example of the suggested process, a nano-dot array was replicated to fabricate nano-filter fur bacteria sensor application.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.330.2-330.2
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• 2014

III-V족 화합물반도체는 트랜지스터와 광다이오드, 레이저 등의 광전소자 제작물질로 오랫동안 사용 되어 왔다. III-V 화합물 반도체로 제작된 광전소자의 특성을 향상시키기 위해선 다양한 형태의 표면구조가 필요하며, distributed feedback 레이저나 distributed Bragg reflector 레이저의 경우 높은 aspect-ratio를 가지는 구조를 필요로 한다. 현재까지 높은 aspect-ratio를 가지는 III-V족 화합물반도체 구조제작을 위해 reactive ion etching (RIE) 방식을 사용 하였는데, 이 방법은 ion collision에 의한 표면손상과 더불어 에칭 잔여물이 남아 반도체 표면을 오염시키는 문제점을 가지고 있다. 이를 개선하기 위하여 MaCE (Metal-Assited chemical etching)법이 최근 제안되었는데, 본 연구에서는 MaCE 방법을 통하여 다양한 형태의 GaAs 표면구조를 제작하였다. 본 실험을 통하여 에칭용액 조건에 따라 GaAs의 구조적 특성과 morphology가 달라지는 것을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.516-521
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• 2001

Dry etching of Si wafer and $SiO_2$ layers was performed using He/Cl$_2$ mixture plasma by diode-type reactive ion etcher (RIE) system. For Si etching, the Cl molecules react with the Si molecules on the surface and become chemically stable, indicating that the reactants need energetic ion bombardment. During the ion assisted desorption, energetic ions would damage the photoresist (PR) and produce the bad etch Si-profile. Moreover, we have examined the characteristics of the Cl-Si reaction system, and developed the new fabrication procedures with a $Cl_2$/He mixture for Si and $SiO_2$-etching. The developed novel fabrication procedure allows the RIE to be unexpensive and useful a Si deep etching system. Since the etch rate was proved to increase linearly with fHe and the selectivity of Si to $SiO_2$ etch rate was observed to be inversely proportional to fHe.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.131-131
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.229-229
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.149-149
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.156-156
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• 2001

• 한국전자현미경학회:학술대회논문집
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• 2002.05a
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• pp.67-70
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.48-48
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.