• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.2971-2975
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• 2012

Second-order rate constants $k_N$ have been measured spectrophotometrically for nucleophilic substitution reactions of t-butyl 4-pyridyl carbonate 8 with a series of alicyclic secondary amines in $H_2O$ at $25.0{\pm}0.1^{\circ}C$. The Br${\emptyset}$nsted-type plot for the reactions of 8 is linear with ${\beta}_{nuc}$ = 0.84. The ${\beta}_{nuc}$ value obtained for the reactions of 8 is much larger than that reported for the corresponding reactions of t-butyl 2-pyridyl carbonate 6 (i.e., ${\beta}_{nuc}$ = 0.44), which was proposed to proceed through a forced concerted mechanism. Thus, the aminolysis of 8 has been concluded to proceed through a stepwise mechanism with a zwitterionic tetrahedral intermediate $T^{\pm}$, in which expulsion of the leaving-group from $T^{\pm}$ occurs at the rate-determining step (RDS). In contrast, aminolysis of benzyl 4-pyridyl carbonate 7 has been reported to proceed through two intermediates, $T^{\pm}$ and its deprotonated form $T^-$ on the basis of the fact that the plots of pseudo-first-order rate constant $k_{obsd}$ vs. amine concentration curve upward. The current study has demonstrated convincingly that the nature of the leaving and nonleaving groups governs the reaction mechanism. The contrasting reaction mechanisms have been rationalized in terms of an intramolecular H-bonding interaction, steric acceleration, and steric inhibition.

• 한국세라믹학회지
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• 제34권1호
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• pp.95-101
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• 1997

평균입경이 22.1$\mu$m인 알루미늄 분말을 사용하여 무가압 분말 충전 성형법으로 52%의 상대밀도를 갖는 성형체를 제조하였다. 산화반응의 활성화 에너지는 TG의 무게 변화로부터 구하였으며, 16~64kJ/mol 범위의 값을 나타내었다. 활성화에너지의 변화와 미세구조의 관찰로부터 산화반응이 산화막의 파괴와 용출에 의존함을 확인하였다. 알루미늄 성형체를 1000~140$0^{\circ}C$에서 4~60시간동안 산화반응시켰을 때, 알루미늄의 산화반응이 시간보다 온도에 의존하였다. 140$0^{\circ}C$에서 60시간동안 산화반응시킨 시편의 산화율은 92%를 나타내었으며, 이 시편을 다시 1$600^{\circ}C$에서 15시간 소결시켰을 때, 소결체는 62%의 상대밀도를 나타내었다.

• 대한화학회지
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• 제38권3호
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• pp.241-245
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• 1994

산화성 첨가반응을 이용하여 실라트란(분자내 Si-N고리횡단 상호작용을 갖는 5-배위의 규소화합물)의 규소원자와 주족원소간에 Si-M 결합작용이 있는 새로운 이종다핵 화합물을 합성하려고 시도하였다. 1-브로모실라트란(1a)과 $SnBr_2를 반응시켜 노란색(2a)과 흰색(2b)의 고체 혼합물을 얻었고 용해도 차에 의해 각각을 분리하여 ^1H-NMR, ^{29}Si-NMR, ^{119}Sn-NMR, Mass스펙트럼으로 규명한 결과 노란색 화합물만이 Si-Sn결합을 갖는 것으로 판명되었다. SnBr_2를 1-브로모-3,7,10-트리메틸실라트란(1b)과도 반응시켜 Si-Sn 결합을 갖는 화합물, N[CH_2CH(CH_3)O]_3SiSnBr_3(CH_3OH)_2(3)$을 분리하여 여러가지 방법으로 확인하였다.

• 한국재료학회지
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• 제15권10호
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• pp.662-666
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• 2005

Solid solutions of $(Zr/Ti)O_2$ were prepared in powder form by the coprecipitation technique. After mixing with carbon or exposing to nitrogen gas at elevated temperature, titanium cations selectively diffused out from the oxide compound to form titanium carbide (TiC) or titanium nitride (TiN), respectively. TiN formed strong interfacial contacts between the oxide grains. In contrast, TiC formed as small crystallites on oxide grains but did not bind the matrix grains together. TiN therefore played a role in strengthening the interparticle bonding, but TiC weakened the bonding between grains. Partial diffusion of titanium cations also led to nanolayered structure being formed between the oxide grains, which provided weak interfacial layers that fractured in a step-wise fashion.

• 한국재료학회지
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• 제13권3호
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• pp.150-154
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• 2003

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.170-171
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• 2006

The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film has the broad main band of $880{\sim}1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the infrared spectra in the Si-O-C bond moved to low frequency according to the increasing of an oxygen flow rate. The chemical shift affected the carbon content in the SiOC film, and the decreasing of carbon atoms elongated the C-H bonding length, relatively. The main bond without the sharp Si-$CH_3$ bond at $1252cm^{-1}$ consisted of Si-C, C-O and Si-O bonds, and became the bonding structure of the Si-O-C bond.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.65-69
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• 2002

An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.

• Journal of Welding and Joining
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• 제21권2호
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• pp.64-69
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• 2003

The bonding phenomena and mechanical property of duplex stainless steel during brazing have been investigated. The UNS32550 was used for base metal, and the MBF50 was used for insert metal. Brazing was carried out under the various conditions (brazing temperature : 1473K, 1498K, holding time : 0∼1.8ks). There were various microconstituents in the bonded interlayer because of reaction between liquid insert metal and base metal. In the early stage of brazing, BN is formed in the bonded interlayer and base metal near the bonded layer. Cr made is formed in the bonded interlayer. The amount of BN and Cr nitrides decrease with the increase of bonding temperature and holding time. Superior shear strength of 550MPa is obtained by restraining the formation of nitrides. (Received January 17, 2003)

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2000년도 추계학술발표대회 및 bio-venture fair
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• pp.644-647
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• 2000

본 연구에서는 pH 변화에 따른 poly(2-ethyl-2-oxazoline)[PEOx]과 poly(acrylic acid)[PAA]의 수소결합 특성을 고찰하였다. PEOx와 PAA는 산성 조건(pH 4.3이하)하에서 PAA의 수소와 PEOx의 산소간에 수소결합으로 안정한 복합체를 형성하여 침전하였다. PEOx와 PAA 혼합용액을 수성이상계에 적용하기 위한 최적 반응비는 질량비 1:1.5이었고, 이 고분자 혼합용액은 수소결합을 제거한 상태에서 dextran용액과 수성이상계를 형성하였다.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.41-45
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• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.