• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.59-63
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• 2010

Immersion Sn plating was produced on Cu foil by distributing nano-sized diamonds (ND). The ND distributed on the coating surface broke the continuity of Sn-oxide layer, therefore leading to penetrate the molten solder through the oxide and retarding the wettability degradation during a reflow process. Furthermore, the ND in the Sn coating played a role of diffusion barrier for Sn atoms and decreased the growth rate of intermetallic compound ($Cu_6Sn_5$) layer during the solid-state aging. The study confirmed the importance of ND to improve the wettability and reliability of the Sn plating. Complete dispersion of the ND within the immersion Sn plating needs to be further developed for the electronic packaging applications.

• Journal of the Korean Chemical Society
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• v.21 no.3
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• pp.155-160
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• 1977

HMO correlation diagrams for some competing 1,2-and 1,4-cycloaddition reactions have been made to elucidate the reaction mechanism. The main conclusions obtained from this study are as follows. 1) The crossing between the highest occupied molecular orbital and the lowest unoccupied molecular orbital was not observed, which indicates that the reaction proceeds thermally, in agreement with the experimental results. 2) From the consideration of the energy barrier in the process of the energy transformation going from reactants to product, the two-step mechanism via a diradical intermediate is preferred over the concerted one. 3) The existance of diradical intermediates can account for the observed product distributions.

• Bulletin of the Korean Chemical Society
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• v.7 no.3
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• pp.231-235
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• 1986

MNDO and ab initio calculations for gas phase reactions of alkoxide-exchange at silicon and carbon centers have been performed. Results show that MNDO values of ${\Delta}$E's of these reactions closely parallel those of the STO-3G method. The alkoxide-exchange at silicon is shown to be facile due to the formation of stable five-coordinate intermediate while the reaction at carbon is predicted to proceed with high barrier; the difference in this substitution behavior between carbon and silicon is shown to be due to an easy valence shell expansion of silicon in accommodating an extra bond in the formation of stable five-coordinate intermediates.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Journal of the Korean GEO-environmental Society
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• v.15 no.11
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• pp.13-19
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• 2014

Permeable reactive barrier has been recognized as the one of representative methods for remediation of contaminated groundwater. Reactive barrier system containing two and more reactive materials can remove multiple contaminants such as nutritive salts and heavy metals. In this study, removal efficiency of multiple contaminants was evaluated when both zeolite and basic oxygen furnace slag were used as reactive materials. Sequential batch test which consists of two materials was performed to evaluate removal efficiency comparing the reaction order of them against nutritive slats including ammonium and phosphate and heavy metal including cadmium. As a result, zeolite-basic oxygen furnace slag sequence batch test showed the best efficiency for removal of multiple contaminants including nutritive salts and heavy metal.

• Korean Chemical Engineering Research
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• v.56 no.1
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• pp.125-132
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• 2018

The direct synthesis of $C_2$ chemical directly from methane was studied by employing catalysts with ordered mesopores in a dielectric barrier discharge plasma reactor. The reaction was carried out using MgO/OMA (ordered mesoporous alumina), $MgO/{\gamma}-Al_2O_3$ and $MgO/{\alpha}-Al_2O_3$ as catalysts. When MgO/OMA was applied, it showed excellent performance in the plasma reactor using pulse-type power supply and the selectivity of $C_2$ chemicals was measured as 67%. The effects of metal oxide type, textural property of support, alumina phase and power supply type on catalytic performance were investigated especially in terms of $C_2$ chemical formation. BET (Brunauer, Emmett, Teller), X-ray diffraction, transmission electron microscope and thermogravimetric analysis were used to investigate the characterization of the catalyst before and after the reaction.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.581-582
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• 2005

In order to apply the discharge plasma processing. to industrial areas, the control of the chemical reaction mechanism is necessary. The hybrid plasma reactor was designed for the effective treatment of wastewater and hazardous volatile organic substances. This plasma reactor was similar to the barrier discharge, and surface discharge on the dielectric surface was propagated to the water surface strongly for the heterogeneous chemical reaction at the interface between the working gas and the water surface. The discharge emission in this discharge reactor was mainly $N_2$ second positive band in the case of $N_2$ or air gas atmosphere, and intensities from OH radicals in Ar gas atmosphere were stronger than in $N_2$ or air gas atmosphere. From this result, it is necessary to apply Ar gas for the effective generation of OH radicals in this plasma reactor.

• Journal of Powder Materials
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• v.29 no.6
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• pp.477-484
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• 2022

Thermal protection systems (TPS) are a group of materials that are indispensable for protecting spacecraft from the aerodynamic heating occurring during entry into an atmosphere. Among candidate materials for TPS, ceramic insulation materials are usually considered for reusable TPS. In this study, ceramic insulation materials, such as alumina enhanced thermal barrier (AETB), are fabricated via typical ceramic processing from ceramic fiber and additives. Mixtures of silica and alumina fibers are used as raw materials, with the addition of B4C to bind fibers together. Reaction-cured glass is also added on top of AETB to induce water-proof functionality or high emissivity. Some issues, such as the elimination of clumps in the AETB, and processing difficulties in the production of reusable surface insulation are reported as well.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.463-466
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• 2010

We studied the initial reaction mechanism of Zn precursors, namely, di-methylzinc ($Zn(CH_3)_2$, DMZ) and diethylzinc ($Zn(C_2H_5)_2$, DEZ), for zinc oxide thin-film growth on a Si (001) surface using density functional theory. We calculated the migration and reaction energy barriers for DMZ and DEZ on a fully hydroxylized Si (001) surface. The Zn atom of DMZ or DEZ was adsorbed on an O atom of a hydroxyl (-OH) due to the lone pair electrons of the O atom on the Si (001) surface. The adsorbed DMZ or DEZ migrated to all available surface sites, and rotated on the O atom with low energy barriers in the range of 0.00-0.13 eV. We considered the DMZ or DEZ reaction at all available surface sites. The rotated and migrated DMZs reacted with the nearest -OH to produce a uni-methylzinc ($-ZnCH_3$, UMZ) group and methane ($CH_4$) with energy barriers in the range of 0.53-0.78 eV. In the case of the DEZs, smaller energy barriers in the range of 0.21-0.35 eV were needed for its reaction to produce a uni-ethylzinc ($-ZnC_2H_5$, UEZ) group and ethane ($C_2H_6$). Therefore, DEZ is preferred to DMZ due to its lower energy barrier for the surface reaction.