• Title/Summary/Keyword: Reactant ratio effect

Search Result 36, Processing Time 0.033 seconds

The Onset and Growth of the Buoyancy-driven Fingering Driven by the Irreversible A+B→C Reaction in a Porous Medium: Reactant Ratio Effect

  • Kim, Min Chan
    • Korean Chemical Engineering Research
    • /
    • v.59 no.1
    • /
    • pp.138-151
    • /
    • 2021
  • The effect of a reactant ratio on the growth of a buoyancy-driven instability in an irreversible A+B→C reaction system is analyzed theoretically and numerically. Taking a non-stoichiometric reactant ratio into account, new linear stability equations are derived without the quasi-steady state assumption (QSSA) and solved analytically. It is found that the main parameters to explain the present system are the Damköhler number, the dimensionless density difference of chemical species and the ratio of reactants. The present initial grow rate analysis without QSSA shows that the system is initially unconditionally stable regardless of the parameter values; however, the previous initial growth rate analysis based on the QSSA predicted the system is unstable if the system is physically unstable. For time evolving cases, the present growth rates obtained from the spectral analysis and pseudo-spectral method support each other, but quite differently from that obtained under the conventional QSSA. Adopting the result of the linear stability analysis as an initial condition, fully nonlinear direct numerical simulations are conducted. Both the linear analysis and the nonlinear simulation show that the reactant ratio plays an important role in the onset and the growth of the instability motion.

Removal Effect of Acid Gases by Reactant Mixer and Distributor of Bag Filter in Dry Scrubbing with NaHCO3 (중탄산나트륨 건식공정에서 반응제 혼합 장치 및 백필터 분배장치에 의한 산성가스 제거 영향)

  • Lee, Young-Man;Kwak, Yeon-Ho;Bae, Woo-Keun;Kwon, Ki-Wook
    • Journal of Korean Society for Atmospheric Environment
    • /
    • v.25 no.5
    • /
    • pp.402-409
    • /
    • 2009
  • Sodium bicarbonate ($NaHCO_3$) was used as a reactant for the removal of acid gases from a waste incinerator. The removal efficiencies of HCl and $SO_x$ were tested with a reactant mixing apparatus and a distributor installed at the bag filter inlet. It was shown that the stoichiometric ratio of $NaHCO_3$ to the acid gases which allows a removal of over 90% for both HCl and $SO_2$ was about 1.2. When a reactant mixing apparatus was installed on the duct, the removal efficiencies of HCl and $SO_2$ at the end of the duct were increased by approximately 1.5 and 3 times respectively, compared to when the apparatus was not installed. At the end of the bag filter, the removal efficiencies of the both were as high as 98% with a stoichiometric ratio of 1.35. Installing a reactant mixing apparatus on the duct and a distributor at the entrance of the bag filter and using $NaHCO_3$ as a reactant helped overcome the problem of low removal efficiencies of acid gases by dry scrubbing.

Effect of Non-lattice Oxygen Concentration on Non-linear Interfacial Resistive Switching Characteristic in Ultra-thin HfO2 Films

  • Kim, Yeong-Jae;Kim, Jong-Gi;Mok, In-Su;Lee, Gyu-Min;Son, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.359-360
    • /
    • 2013
  • The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

  • PDF

Effects of DC Substrate Bias Power Sources and Reactant Gas Ratio on Synthesis and Tribological Properties of Ternary B-C-N Coatings (기판 바이어스 DC 전원의 종류와 반응가스 분압비가 3성분계 B-C-N 코팅막의 합성과 마찰 특성에 미치는 영향)

  • Jeong, Da-Woon;Kim, Doo-In;Kim, Kwang-Ho
    • Journal of the Korean institute of surface engineering
    • /
    • v.44 no.2
    • /
    • pp.60-67
    • /
    • 2011
  • Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.

Spectral Model of Turbulent Burning Velocity Taking Account of the Diffusivity of Deficient Reactant (부족성분 확산계수의 영향을 고려한 난류연소속도의 스펙트럼 모델)

  • 김준효
    • Journal of the Korean Society of Fisheries and Ocean Technology
    • /
    • v.33 no.3
    • /
    • pp.218-225
    • /
    • 1997
  • The formerly proposed spectral model of turbulent burning velocity is refined for nonstoichiometric hydrocarbon mixtures. Refinements are made in regard to the following two points : (1) an effect of the diffusivity of deficient reactant on the turbulent burning velocity and (2) consideration of increasing laminar name thickness with a decrease in the laminar burning velocity A comparison between the predicted turbulent velocities and the measured ones is made. The predictions by the refined spectral model agree quantatively well with the experimental results in the regime of practical equivalence ratio, but not in the high and low equivalence ratio regime.

  • PDF

The Optimization of the Selective CVD Tungsten Process using Statistical Methodology (통계적 기법을 이용한 선택적 CVD 텅스텐 공정 최적화 연구)

  • 황성보;최경근;박흥락;고철기
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.12
    • /
    • pp.69-76
    • /
    • 1993
  • The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

  • PDF

A Study on the Characteristics of Aluminum Oxide Thin Films Prepared by ECR-PECVD (ECR-플라즈마 화학 증착된 알루미늄 산화막 연구)

  • 이재균;전병혁;이원종
    • Journal of the Korean Ceramic Society
    • /
    • v.31 no.6
    • /
    • pp.601-608
    • /
    • 1994
  • Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

  • PDF

A Characterization of Pervaporation-facilitated Esterification Reaction with non-perfect Separation (비완전 막분리시 투과증발 막촉진 에스터화 반응 거동 연구)

  • C. K Yeom;F. U. Baig
    • Membrane Journal
    • /
    • v.13 no.4
    • /
    • pp.268-282
    • /
    • 2003
  • Pervaporation-facilitated esterification with slow reaction regime was characterized by using a practical model based on non-perfect separation through membrane. A non-perfect separation in which the membrane is not perfectly permselective to water was applied to the model. Thus, membrane selectivity and membrane capability to remove water were included in the simulation model to explain how they influence the membrane-facilitated reaction process and improve the reactor performance. It was shown by simulation that in the reaction systems with non-perfect separation, reaction completion can hardly be achievable when any reactant at initial molar ratio=1 or the less abundant reactant at initial molar ratio>1 permeates through membrane, and the permeation of ester accelerates the forward reaction md increase reaction conversion at any instant through removal of product species like water. The volume change causes concentrating both reactants and products that affect the reaction with time in opposite ways; reactant-concentrating effect is dominant during the initial stage of reaction, increasing the reaction rate, and then concentrating product influences more reaction by decreasing the reaction rate.

Hydrothermal Synthesis and Characterization of BaTiO3 Fine Powders (BaTiO3 미세 분말의 수열합성 및 특성분석)

  • Park, Jung-Hoon;Park, Sangdo
    • Korean Chemical Engineering Research
    • /
    • v.45 no.5
    • /
    • pp.448-454
    • /
    • 2007
  • Hydrothermal synthesis was conducted with starting material as Barium hydroxide and hydrous titania ($TiO_2{\cdot}xH_2O$) to obtain barium titanate fine Powder. The conversion, crystal structure and properties of as-prepared powder were investigated according to reaction temperature, time and concentration. The effect of variables on conversion was in order of time < temperature < concentration and the maximum conversion reached to 99.5% in the case of hydrothermal synthesis at $180^{\circ}C$ for 2 h with 2.0 M reactant concentration. At low concentration such as 0.25 M, formation of unreacted $BaCO_3$ and $TiO_2$ was not inevitable at even high reaction temperature and these components converted into $BaTi_2O_5$ at high temperature and remained as impurity. As concentration of reactant increased, the size of as-synthesized $BaTiO_3$ powder deceased and Ba/Ti molar ratio approached into 1, showing Ba/Ti ratio of $1{\pm}0.005$ for reaction at $180^{\circ}C$ for 2 h with 2.0 M concentration.

Characteristics of LPG Fuel Reforming using Plasma Technology (플라즈마를 이용한 LPG연료 개질 특성연구)

  • Kim, Changup
    • Transactions of the Korean hydrogen and new energy society
    • /
    • v.26 no.1
    • /
    • pp.1-7
    • /
    • 2015
  • In this study, characteristics of reforming process of automotive liquefied petroleum gas (LPG) fuel using plasma reactor are investigated. Because plasma reformer technology has advantages of a fast start-up and wide fuel/oxidizer ratio of operation, and reactor size is smaller and more simple compared to typical combustor and catalytic reactor, plasma reforming is suitable to the on-board vehicle reformer. To evaluate the characteristics of the reforming process, parametric effect of $O_2/C$ ratios, reactant flow rate and metal form on the process were investigated. In the test of varying $O_2/C$ ratio from partial oxidation to stoichiometry combustion, conversion of LPG was increased but selectivity of $H_2$ decreased. The optimum condition of $O_2/C$ ratio for the highest $H_2$ yield was determined to be around 1.0 for 20~50 lpm, and 1.35 for 100 lpm. Specific energy density (SED) was major factor in reforming process and higher SED leads to higher $H_2$ yield. And metal form in the reformer increased $H_2$ yield of about 34 % as compared to the case of no metal form. The result can be a guide to map optimal condition of reforming process.