• 전기학회논문지
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• 제56권1호
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권6호
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• pp.360-366
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• 2000

This paper presents the fabrication and test of a micropump consisting of a pair of Al flap valves and a phase-change type actuator. The actuator is composed of a heater, a silicone rubber diaphragm and a working fluid chamber. The diaphragm is actuated by the vaporization and the condensation of the working fluid. The micropump is fabricated by the anisotropic etching, the boron diffusion and the metal evaporation. The forward and the backward flow characteristics of the flap valves illustrate the appropriateness as a check valve. Also, the flow rate of the micropump is measured. When the square wave input voltage of 8 V, 70% duty ratio and 2 Hz is applied to the heater, the maximum flow rate of the micropump is $97\muell/min$ for zero pressure difference.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.889-894
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• 2007

We investigated the quench velocity of superconducting fault current limiter (SFCL) dependent on the source voltage. $YBa_2Cu_3O_7$ (YBCO) thin film was used as the current limiting element for SFCL. The analysis on the quench velocity of SFCL is essential to determine the capacity of circuit breaker (CB) or coordinate with CB. Generally, the quench velocity of SFCL is related with the short-circuit current. To change the short-circuit current, in this paper, the amplitude of the power source voltage is adjusted. Through the fault current limiting experiments, the quench velocity of SFCL was confirmed to increase fast as the source voltage increased. On the other hand, the peak limited current was shown to increase with steady rate of increase.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.2287-2290
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• 2003

The electrical characteristics of power devices such as BJT (Bipolar Junction Transistor), and MOSFET (Metal Oxide Field Effect Transistor), etc, are altered due to impinging photon radiation and temperature in the nuclear or the space environment. In this paper, BJT and MOSFET are the two devices subjected to ${\gamma}$ radiation. In the case of BJT, the current gain (${\beta}$) and the collector to Emiter breakdown voltage ($V_{CEO}$) are the two main parameters considered. When it was subjected to ${\gamma}$ rays, the ${\beta}$ decreases as the dose level increases, whereas, $V_{CEO}$ gradually increases as the dose level increases. In the case of MOSFET, the threshold voltage is decreasing as the dose level increases. Here it has been observed the decent rate is an increasing function of the threshold voltage. The on-resistance does not change with respect to the dose. Both the devices recover back the original specification after the annealing is finished. No permanent damage has been occurred.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.793-796
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• 2003

The electronics of a mobile robot ill nuclear facilities is required to satisfied the reliability to sustain survival in its radiation environment. To know how much radiation the robot has been encountered to replace sensitive electronic parts, a dosimeter to measure total accumulated dose is necessary. Among many radiation dosimeters or detectors, semiconductor radiation sensors have advantages in terms of power requirements and their sires over conventional detectors. This paper describes the use of the radiation-induced threshold voltage change of a commercial power pMOSFET as an accumulated radiation dose monitoring mean and that of the photo-current of a commercial PIN Diode as a dose-rate measurement mean. Commercial p-type power MOSFETs and PIN Diodes were tested in a Co-60 gamma irradiation facility to see their capabilities as radiation sensors. We found an inexpensive commercial power pMOSFET that shows good linearity in their threshold voltage shift with radiation dose and a PIN diode that shows good linearity in its photo-current change with dose-rate. According to these findings, a radiation hardened hybrid electronic radiation dosimeter for nuclear robots has been developed for the first time. This small hybrid dosimeter has also an advantage in the point of view of reliability improvement by using a diversity concept.

• 전기전자학회논문지
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• 제23권1호
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• pp.261-265
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• 2019

기존 양방향 컨버터와 출력 커패시터를 추진용 배터리 쪽으로 이동시킨 양방향 컨버터의 고장률 변화를 분석한다. 두 컨버터의 회로 구조적 동일성과 차이점을 분석하여 커패시터 위치 변경으로 동작전압이 저감됨을 확인한다. 전압스트레스 인자와 동작온도에 따른 커패시터 부품 고장률을 구하고 양방향 컨버터의 고장나무에 적용하여 컨버터 전체 고장률을 구한다. 동작온도와 커패시턴스 값에 따른 고장률과 평균고장시간을 비교 분석하여 설계 변경으로 인한 장 단점을 분석한다.

• 조명전기설비학회논문지
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• 제29권3호
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• pp.81-87
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• 2015

In order to effectively protect electrical and electronic circuits which are extremely susceptible to lightning surges, multi-stage surge protection circuits are required. This paper presents the operational characteristics of the two-stage hybrid surge protection circuit in extra-low voltage DC power lines. The hybrid surge protective device consists of the gas discharge tube, transient voltage suppressor, and series inductor. The response characteristics of the proposed hybrid surge protective device to combination waves were investigated. As a result, the proposed two-stage surge protective device to combination wave provides the tight clamping level of less than 50V. The firing of the gas discharge tube to lightning surges depends on the de-coupling inductance and the rate-of-change of the current flowing through the transient voltage suppressor. The coordination between the upstream and downstream components of the hybrid surge protective device was satisfactorily achieved. The inductance of a de-coupler in surge protective circuits for low-voltage DC power lines, relative to a resistance, is sufficiently effective. The voltage drop and power loss due to the proposed surge protective device are ignored during normal operation of the systems.

• Journal of Mechanical Science and Technology
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• 제17권7호
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• pp.1083-1094
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• 2003

This study represents an assessment of the phase-Doppler technique to the measurements of dense droplet laden jet. High-pressure injection fuel sprays have been investigated to evaluate the use of the Phase-Doppler anemometry (PDA) technique. The critical issue is the stability of the phase-Doppler anemometry technique for dense droplet laden jet such as Diesel fuel spray in order to insure the results from the drop size and velocity measurements are repeatable, consistent, and physically realistic because the validation rate of experimental data is very low due to the thick optical density. The effect of shift frequency is minor, however, the photomultiplier tube (PMT) voltage setting is very sensitive to the data acquisition and noise in dense droplet laden jet. The optimum PMT voltage and shift frequency should be chosen so that the data such as volume flux and drop diameter do not change rapidly.

• 한국정보통신학회논문지
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• 제16권5호
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• pp.982-988
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• 2012

본 연구에서는 이중게이트(Double Gate; DG) MOSFET에서 문턱전압과 스켈링 이론의 관계를 관찰하였다. 기존 MOSFET의 경우 채널크기에 스켈링 이론을 적용하여 전류 및 스위칭주파수를 해석하였다. 이에 본 연구에서는 이중게이트 MOSFET에서 문턱전압의 경우 스켈링 이론의 적용가능성을 관찰하기 위하여 문턱전압의 변화를 스켈링 인자에 따라 관찰하고 분석하였다. 이를 위하여 이미 검증된 포아송방정식의 해석학적 전위분포를 이용하였으며 이때 가우스함수의 전하분포를 사용하였다. 분석결과 문턱전압이 스켈링 인자에 따라 크게 변화하였으며 변화정도는 도핑농도의 스켈링에 따라 변화한다는 것을 관찰하였다. 특히 이중게이트의 특성상 채널두께 및 채널길이에 스켈링 이론을 적용할 때 가중치를 이용한 변형된 스켈링 이론을 적용함으로써 이중게이트 MOSFET에 가장 타당한 스켈링 이론에 대하여 설명할 것이다.

• 조명전기설비학회논문지
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• 제21권10호
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• pp.1-12
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• 2007

본 실험에서는 운전자의 시인성을 측정하였다. 운전자의 시인성은 전압패턴에 따라 피험자의 장애물 인식 반응시간을 측정하여 분석하였고, 남녀 성별 간의 장애물 인식 반응시간의 차이를 분석하였다. 또한 전조등의 전압변동에 의한 밝기 비율에 따라서 피험자의 장애물 인식 반응속도를 분석하였고, 전압변동이 없을 때의 장애물 인식 반응시간을 기준으로 상대적인 장애물 인식 지연시간을 분석하였다.